UTC 225 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1SS355 DIODE SWITCHING DIODE DESCRIPTION  The UTC 1SS355 is a switching diode, it uses UTC’s advanced technology to provide the customers with high reliability and ultra small mold type, etc. The UTC 1SS355 is suitable for high speed switching applications,

UTC 225

Abstract: 1SS355G-CB2-R 1SS355
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1SS355 Preliminary DIODE SWITCHING DIODE DESCRIPTION „ The UTC 1SS355 is a switching diode, it uses UTC’s advanced technology to provide the customers with high reliability and ultra small mold type, etc. The UTC 1SS355 is suitable for high speed switching applications,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1SS355 DIODE SWITCHING DIODE DESCRIPTION  The UTC 1SS355 is a switching diode, it uses UTC’s advanced technology to provide the customers with high reliability and ultra small mold type, etc. The UTC 1SS355 is suitable for high speed switching applications,

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 1SS355 Preliminary DIODE SWI T CH I N G DI ODE ̈ DESCRI PT I ON The UTC 1SS355 is a switching diode, it uses UTC’s advanced technology to provide the customers with high reliability and ultra small mold type, etc. The UTC 1SS355 is suitable for high speed switching applications,

MC33218

Abstract: Log-Antilog Amplifier intercom electronic circuit diagram Analog Applications Journal
Contextual Info: UTC MC33218 LINEAR INTEGRATED CIRCUIT VOICE SWITCHED SPEAKERPHONE WITH MICROPROCESSOR INTERFACE DESCRIPTION The UTC MC33218 voice switched speakerphone circuit incorporates the necessary amplifiers, attenuators, level detectors and control algorithm to form the heart of a high

MMBT9012

Abstract: MMBT9013 ,MARKING 12. SOT-23 UTC 225
Contextual Info: UTC MMBT9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2 *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC MMBT9013 1

utc3843

Abstract: 3843B UTC3842 UTC3843B UTC3842B UC3842B PWM 3843B UTC 225
Contextual Info: UTC UC3842B / 3843B LINEAR INTEGRATED CIRCUIT HIGH PERFORMANCE CURRENT MODE CONTROLLERS DESCRIPTION The UTC UC3842B/3843B are specifically designed for Off-Line and dc-to-dc converter applications offering the designer a cost-effective solution with minimal external

Contextual Info: UTC MMBT9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2 *High total power dissipation. 625mW *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012 1

MMBT9013

Abstract: MMBT9012 MMBT9013L
Contextual Info: UTC MMBT9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2 *High total power dissipation. 625mW *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012 1

Contextual Info: UTC MMBT9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2 *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC MMBT9013 1

12N60l

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

3843B

Abstract: UTC3842 utc3843 UC3842B utc3843b UTC3842B uc3842b equivalent IC 3843B UC3843B PWM 3843B
Contextual Info: UTC UC3842B / 3843B LINEAR INTEGRATED CIRCUIT HIGH PERFORMANCE CURRENT MODE CONTROLLERS DESCRIPTION The UTC UC3842B/3843B are specifically designed for Off-Line and dc-to-dc converter applications offering the designer a cost-effective solution with minimal external

UTC12N70

Abstract: 12N70 220f1 12N70L-TF3-T 12n70l
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N70 Power MOSFET 12 Amps, 700 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

12n70

Abstract: 12n70g 12N70L-TF3-T 12N70-TF1-T power mosfet 200A 60A 45V TO-220F 12N70-TF3-T 480-V 12N70L-TA3-T BY 220 diode
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N70 Power MOSFET 12 Amps, 700 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD P6KE TVS TRANSIENT VOLTAGE SUPPRESSORS „ DESCRIPTION The UTC P6KE is Transient Voltage Suppressors. it uses UTC’s advanced technology to provide customers with low leakage current, ultra-low response time and perfect clamping capability, etc

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N65 Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N65 are N-Channel enhancement mode power field effect transistors MOSFET which are produced by using UTC’s proprietary, planar stripe and DMOS technology.

12N60L

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

UTC12N60

Abstract: 12n60g 12N60L 12n60 12a 600v 12N60 mosfet 12A 600V
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

12n60a

Abstract: 12N60 12N60L 12n60 dc 12n60b 12A 650V MOSFET 12N-60a power mosfet 200A 12N60L-x-TF3-T 12N60G
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD P6KE TVS TRANSIENT VOLTAGE SUPPRESSORS  DESCRIPTION The UTC P6KE is Transient Voltage Suppressors. it uses UTC’s advanced technology to provide customers with low leakage current, ultra-low response time and perfect clamping capability, etc

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N65 Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 12N65 are N-Channel enhancement mode power field effect transistors MOSFET which are produced by using UTC’s proprietary, planar stripe and DMOS technology.

UTC 225

Abstract: utc225 LM318 LM318 APPLICATION LM318 application note QW-R105-016 LM318 data 100PF LM709 fast op LM318
Contextual Info: UTC LM318 LINEAR INTEGRATED CIRCUIT DESCRIPTION The UTC LM318 is precision high speed operational amplifier designed for applications requiring wide bandwidth and high slew rate. It features a factor of ten increase in speed over general purpose device without sacrificing DC performance.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N70 Power MOSFET 12A, 700V N-CHANNEL POWER MOSFET 1   FEATURES TO-220F TO-220 DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.