MMBT9012 Search Results

mmbt9013

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT9013 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION „ FEATURES *High total Power Dissipation. 625mW *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012

MMBT9013

Abstract: MMBT9012
Contextual Info: MMBT9013 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the PNP transistor MMBT9012 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage

MMBT9012

Contextual Info: MMBT9012 PNP Silicon Epitaxial Planar Transistors For switching and amplifier applications As complementary types the NPN transistors MMBT9013 is recommended. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25℃ PARAMETER

MMBT9012H

Abstract: MMBT9012G MMBT9013G MMBT9013H
Contextual Info: MMBT9012G / MMBT9012H PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the NPN transistors MMBT9013G and MMBT9013H are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol

9013G

Abstract: 9012 transistor sot-23 9012 pnp MMBT9012LT1
Contextual Info: MMBT9012LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 1W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 1. Complement to 9013G Collector Current :Ic=-500mA 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 0.4 0.95 0.95 2.9 1.9 High Total Power Dissipation Pc=225mW

MMBT9013G

Abstract: MMBT9013H MMBT9012G MMBT9012H
Contextual Info: MMBT9013G / MMBT9013H NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the PNP transistor MMBT9012G and MMBT9012H are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol

MMBT9013

Contextual Info: MMBT9013 NPN Silicon Epitaxial Planar Transistors For switching and amplifier applications As complementary types the PNP transistors MMBT9012 is recommended. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25℃ PARAMETER

MMBT9013

Abstract: MMBT9012 MMBT9013L
Contextual Info: UTC MMBT9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2 *High total power dissipation. 625mW *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012 1

Contextual Info: UTC MMBT9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2 *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC MMBT9013 1

9013G

Abstract: 9012 SOT-23 9012 pnp MMBT9012LT1 9012 transistor sot-23 transistor SOT23 PD j6 9012 SOT23 MMBT901
Contextual Info: MMBT9012LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 1W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 1. Complement to 9013G Collector Current :Ic=-500mA 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 0.4 0.95 0.95 2.9 1.9 High Total Power Dissipation Pc=225mW

MMBT9012

Abstract: MMBT9013 ,MARKING 12. SOT-23 UTC 225
Contextual Info: UTC MMBT9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2 *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC MMBT9013 1

MMBT9012H

Abstract: MMBT9012HLT1 MMBT9012G MMBT9012 MMBT9013
Contextual Info: MMBT9012GLT1 / MMBT9012HLT1 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the NPN transistors MMBT9013GLT1 and MMBT9013HLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC

Contextual Info: UTC MMBT9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2 *High total power dissipation. 625mW *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012 1

MMBT9012G

Abstract: MMBT9012H MMBT9013G MMBT9013H
Contextual Info: MMBT9012G / MMBT9012H PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the NPN transistors MMBT9013G and MMBT9013H are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter

MMBT9012G

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT9012 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION 3  FEATURES 2 *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC MMBT9013

MMBT9013H

Abstract: MMBT9012G MMBT9012H MMBT9013G
Contextual Info: MMBT9013G / MMBT9013H NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the PNP transistor MMBT9012G and MMBT9012H are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter

MMBT9012G

Abstract: MMBT9012H
Contextual Info: MMBT9012GLT1 / MMBT9012HLT1 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the NPN transistors MMBT9013GLT1 and MMBT9013HLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC

MMBT9013

Abstract: MMBT9012
Contextual Info: MMBT9012 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the NPN transistors MMBT9013 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT9013 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION 3  FEATURES 2 *High total Power Dissipation. 625mW *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012

MMBT9012G

Abstract: MMBT9012H MMBT9013G MMBT9013H
Contextual Info: MMBT9012G / MMBT9012H PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the NPN transistors MMBT9013G and MMBT9013H are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter

MMBT9013

Abstract: MMBT9012
Contextual Info: UNISONIC TECHNOLOGIES CO., MMBT9013 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION „ FEATURES *High total Power Dissipation. 625mW *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012

XL1225 equivalent

Abstract: 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent
Contextual Info: Transistors, SCR, IC CROSS REFERENCE / EQUIVALENT TABLE R Cross Reference Table 1 / 13 INDUSTRY TYPE No. DC COMP. TYPE No. Cross Reference Table 2 / 13 PACKAGE INDUSTRY TYPE No. DC COMP. TYPE No. PACKAGE 2N2955 2N2955 TO-3 2SA952 2SA952 TO-92 2N3055 2N3055

BC547 sot package sot-23

Abstract: BC547 sot23 BC557 sot-23 BC557 sot package sot-23 BC556 sot package sot-23 2sa1015 sot-23 2SC945 SOT-23 bc548 sot23 2sb772 TO92 PCR306
Contextual Info: DC Components - Cross Reference Industry Type No. DC Type 2N2955 2N2955 TO-3 2N3055 2N3055 TO-3 2SB1426 2SB1426 2SB507 2SB507 TO-220AB 2N3772 2N3772 TO-3 2SB564A 2SB564A 2N3773 2N3773 TO-3 2N3904 2N3904 TO-92 2SB772 2SB772 TO-126 2N3906 2N3906 TO-92 2SB857 2SB857 TO-220AB

Contextual Info: UNISONICTECHNOLOGIESCO., LTD MMBT9013 NPN SILICON TRANSISTOR 1 W OU T PU T AM PLI FI ER OF POT ABLE RADI OS I N CLASS B PU SH -PU LL OPERAT I ON ̈ FEAT U RES *High total Power Dissipation. 625mW *High Collector Current. (500mA) *Excellent hFE linearity.