12N65 Search Results

12N65

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N65 Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 12N65 are N-Channel enhancement mode power field effect transistors MOSFET which are produced by using UTC’s proprietary, planar stripe and DMOS technology.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N65K-MT Preliminary Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors MOSFET which are produced by using UTC’s proprietary, planar stripe and DMOS technology.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N65 Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 12N65 are N-Channel enhancement mode power field effect transistors MOSFET which are produced by using UTC’s proprietary, planar stripe and DMOS technology.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N65K-MT Preliminary Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors MOSFET which are produced by using UTC’s proprietary, planar stripe and DMOS technology.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N65 Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N65 are N-Channel enhancement mode power field effect transistors MOSFET which are produced by using UTC’s proprietary, planar stripe and DMOS technology.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD L8561 Preliminary LINEAR INTEGRATED CIRCUIT POWER FACTOR CORRECTOR „ DESCRIPTION The UTC L8561 is a Power Factor Corrector, which can work in wide input voltage range applications from 85V ~ 265V with an excellent THD. It has very low start up current (about 20 uA) and

Contextual Info: 3VD499650YL 3VD499650YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD499650YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ Advanced termination scheme to provide enhanced voltage-blocking capability;

L8562

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD L8562 LINEAR INTEGRATED CIRCUIT POWER FACTOR CORRECTOR „ DESCRIPTION The UTC L8562 is a Power Factor Corrector, which can work in wide input voltage range applications from 85V ~ 265V with an excellent THD. It has very low start up current (about 20 uA) and

12N65

Abstract: STI12N65M5 STP12N65M5 kpe 153 STD12N65M5 STF12N65M5 STU12N65M5 12N65M5
Contextual Info: 12N65M5, 12N65M5, 12N65M5 12N65M5, 12N65M5 N-channel 650 V, 0.39 Ω, 8.5 A MDmesh V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK Features VDSS @ TJmax Type 12N65M5 12N65M5 12N65M5 12N65M5 12N65M5 710 V RDS on max ID PTOT

Contextual Info: UNISONICTECHNOLOGIESCO., LTD L8562 LINEAR INTEGRATED CIRCUIT POWER FACT OR CORRECT OR ̈ DESCRI PT I ON The UTC L8562 is a Power Factor Corrector, which can work in wide input voltage range applications from 85V ~ 265V with an excellent THD. It has very low start up current (about 20 uA) and

Contextual Info: 12N65M5 N-channel 650 V, 0.475 Ω typ., 8.5 A MDmesh V Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet − production data Features Order code VDSS RDS on max ID 12N65M5 710 V 0.530 Ω 8.5 A • Outstanding RDS(on)*area • Extremely large avalanche performance

kpe 153

Abstract: STU12N65M5 marking code KP STF12N65M5 12N65 520V N-Channel MOSFET STD12N65M5 STI12N65M5 STP12N65M5
Contextual Info: 12N65M5, 12N65M5, 12N65M5 12N65M5, 12N65M5 N-channel 650 V, 0.39 Ω, 8.5 A MDmesh V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK Features Type VDSS @ TJmax 12N65M5 12N65M5 12N65M5 12N65M5 12N65M5 710 V 710 V 710 V 710 V

Tf 12N65

Abstract: 12N65 750K1206 7bd11
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD L8562 Preliminary LINEAR INTEGRATED CIRCUIT POWER FACTOR CORRECTOR „ DESCRIPTION The UTC L8562 is a Power Factor Corrector, which can work in wide input voltage range applications from 85V ~ 265V with an excellent THD. It has very low start up current (about 20 uA) and

12N65

Abstract: STL12N65M5 12N65M5 8534A
Contextual Info: 12N65M5 N-channel 650 V, 0.390 Ω, 8.5 A PowerFLAT 8x8 HV ultra low gate charge MDmesh™ V Power MOSFET Preliminary data Features Type VDSS @ TJmax RDS(on) max ID 12N65M5 710 V < 0.430 Ω 8.5 A (1) 3 3 3 "OTTOMVIEW ' $ 1. The value is rated according to Rthj-case

12n65

Abstract: stp12n65m5 stu12n65 IPAK equivalent
Contextual Info: 12N65M5, 12N65M5, 12N65M5 12N65M5, 12N65M5 N-channel 650 V, 0.39 Ω, 8.5 A MDmesh V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK Features VDSS @ TJmax Type 12N65M5 12N65M5 12N65M5 12N65M5 12N65M5 710 V RDS on max ID PTOT

12N65

Abstract: Tf 12N65
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD L8561 LINEAR INTEGRATED CIRCUIT POWER FACTOR CORRECTOR „ DESCRIPTION The UTC L8561 is a Power Factor Corrector, which can work in wide input voltage range applications from 85V ~ 265V with an excellent THD. It has very low start up current (about 20 uA) and

STF12N65M5

Abstract: 12N65M5 STD12N65M5 STU12N65M5 12N65 STP12N65M5 STx12N65M5
Contextual Info: 12N65M5, 12N65M5 12N65M5, 12N65M5 N-channel 650 V, 0.370 Ω, 8.5 A MDmesh V Power MOSFET DPAK, TO-220FP, TO-220, IPAK Preliminary Data Features VDSS @ TJmax Type RDS on max ID 12N65M5 8.5 A 710 V < 0.41 Ω 3 2 12N65M5 12N65M5 PW

Contextual Info: UNISONICTECHNOLOGIESCO., LTD L8561 LINEAR INTEGRATED CIRCUIT POWER FACT OR CORRECT OR ̈ DESCRI PT I ON The UTC L8561 is a Power Factor Corrector, which can work in wide input voltage range applications from 85V ~ 265V with an excellent THD. It has very low start up current (about 20 uA) and

12N65F

Contextual Info: 12N65T / 12N65FT 650V / 12A 650V, RDS ON =0.8Ω@VGS=10V, ID=6.0A N-Channel Enhancement Mode MOSFET Features • • • • • • Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS

12N65

Abstract: 3VD499650YL
Contextual Info: 3VD499650YL 3VD499650YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD499650YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø Advanced termination scheme to provide enhanced 3 1