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Contextual Info: 3VD499650YL 3VD499650YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD499650YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ Advanced termination scheme to provide enhanced voltage-blocking capability;	Original	3VD499650YL 3VD499650YL O-220 12N65;	PDF
12N65 Abstract: 3VD499650YL Contextual Info: 3VD499650YL 3VD499650YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD499650YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø Advanced termination scheme to provide enhanced 3 1	Original	3VD499650YL 3VD499650YL O-220 12N65; 12N65	PDF

Catalog Datasheet

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Document Tags

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Contextual Info: 3VD499650YL 3VD499650YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD499650YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ Advanced termination scheme to provide enhanced voltage-blocking capability;

Original

3VD499650YL 3VD499650YL O-220 12N65;

PDF

12N65

Abstract: 3VD499650YL
Contextual Info: 3VD499650YL 3VD499650YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD499650YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø Advanced termination scheme to provide enhanced 3 1

Original

3VD499650YL 3VD499650YL O-220 12N65; 12N65

PDF