UNITRODE TRANSISTORS Search Results

UFN320

Abstract: C1347 MOS 6509
Contextual Info: UNITRODE CORP 9347963 T5 UNITRODE CORP 1 1 ^ ^ 3 4 7 ^ 3 OOlObMfl 92D 10648 d POWER MOSFET TRANSISTORS r - ^ w UFN320 UFN321 UFN322 UFN323 400 Volt, 1.8 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.

ufn250

Abstract: UFN253
Contextual Info: T2 UNITRODE CORP 9347963 UNITRODE DQIOLHE ? ^ 92D CORP D 10642 UFN250 UFN251 UFN252 UFN253 POWER MOSFET TRANSISTORS r 3? 1 3 200 Volt, 0.085 Ohm N-Channel FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available.

MOS 6509

Abstract: 400v 50A DIODE
Contextual Info: UNITRODE CORP 9347963 TS UNITRODE CORP DGlDbbQ 1 920 10660 DT' ^ /i POWER MOSFET TRANSISTORS 400 Volt, 0.55 Ohm N-Channel UFN342 UFN343 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available, This efficient design achieves a very low Rosiom and a high transconductance.

UFN232

Abstract: ufn230
Contextual Info: UNITRODE CORP 9347963 TE 92D UNITRODE CORP POWER MOSFET TRANSISTORS 200 Volt, 0.4 Ohm N-Channel c1 3 4 7 ci b 3 G D lG t,3 D 10630 U-jz UFN230 UFN231 UFN232 UFN233 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.

ufn730

Abstract: UFN731
Contextual Info: UNITRODE CORP 9347963 M | cî347cib3 DDlG7Sb UNITRODE CORP 92D 10756 POWER MOSFET TRANSISTORS UFN730 UFN731 UFN732 UFN733 400 Volt, 1.0 Ohm N-Channel FEATU R ES D E S C R IP T IO N • • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available.

Unitrode transistors data To5

Abstract: UC195 on 614 TO3 power transistor UC395 transistor 257 transistor 257 isolated unitrode
Contextual Info: UNITRODE CORP/UNITRODE IN T E G R A T E D y IC “ F Smart Power Transistor UNITRODE FEATURES • Greater Than 1.0A Output • 3-OjuA Typical Base Current • 500ns Switching Time • 2.0V Saturation • Directly Interfaces with CMOS or TTL • Internal Thermal Limiting

2n6800

Abstract: saft rectifier
Contextual Info: UNITRODE CORP 9347963 TE3 UNITRODE CORP De " | 92D 10578 POWER MOSFET TRANSISTORS 1T 4 00 Volt, 1.0 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability 0Ü10S7Ô

UNITRODE TRANSISTORS

Contextual Info: HIGH-RELIABILITY POWER DEVICES BY API ELECTRONICS, Including Unitrode Power Transistors and Darlingtons

IRF510 12v led switch

Abstract: SCHEMATIC WITH irfp460 IRFP460 application IRFP460 SWITCHING FREQUENCY UFN150 pin configuration irf510 Power MOSFET u-118 IRF 510 IRFP460 UC3706
Contextual Info: U-118 ul B UNITRODE APPLICATION NOTES NEW DRIVER ICs OPTIMIZE HIGH SPEED POWER MOSFET SWITCHING CHARACTERISTICS Bill Andreycak UNITRODE Integrated Circuits Corporation, Merrimack, N.H. ABSTRACT Although touted as a high impedance, voltage controlled device,

d773

Abstract: diode sy 710 sy 710 diode
Contextual Info: T2 UNITRODE CORP 9347963 Ï F | c]347i:ib3 □ OlOVL.fl 7 | ~ 92D UNITRODE CORP 10768 D r POWER MOSFET TRANSISTORS t S 500 Volt, 3.0 Ohm N-Channel UFN 822 UFN823 FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling

UFND1Z0

Abstract: unitrode stackable rectifier UNITRODE TRANSISTORS UFND1Z3
Contextual Info: UNITRODE CORP 9347963 TE UNITRODE CORP DE^'T3 4 7 Tk3 QD1 D7 T1 2 92D 10791 J.T-25- POWER MOSFET TRANSISTORS UFND1Z0 100 Volt, 2.4 Ohm N-Channel UFND1Z3 FEATURES • For Automatic Insertion • Compact, End Stackable • Fast Switching • Low Drive Current

F422

Abstract: F423 F421 F-423 ir f422 UFNF422
Contextual Info: UNITRODE CORP 9347963 TS UNITRODE CORP DE 1 ^ 3 4 7 ^ 3 92D 10875 UFNF420 UFNF421 UFNF422 UFNF423 POWER MOSFET TRANSISTORS 500 Volt, 3.0 Ohm FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability

Contextual Info: UNITRODE CORP 9347963 T2 ï Ëf| ‘ìBHYTbB DGlDb3t. 1 92D UN I TRODE CORP POWER MOSFET TRANSISTORS 200 Volt, 0.2 Ohm N-Channel 10636 D T 39-13 UFN240 UFN241 UFN242 UFN243 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.

UFN153

Abstract: UFN150
Contextual Info: T2 UNITRODE CORP 9347963 UNITRODE CORP GQIQblfl 0 92D 10618 ^ T -^ -d POWER MOSFET TRANSISTORS UFN150 UFN152 UFN153 100 Volt, 0.055 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability

2N6770

Contextual Info: T2 UNITRODE CORP 9347963 UNITRODE 0G1D5E0 4 ï ~ CORP 92D 10520 POWER MOSFET TRANSISTORS 2N6769 J, JTX, JTXV 2N6770 500 Volt, 0.4 Ohm N-Channel FEA TU RES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Tem perature Stability

DFC-3

Contextual Info: "TE UNITRODE CORP 9347963 UNITRODE CORP 1 1^^347^3 92D POWER MOSFET TRANSISTORS 10833 D UFNF130 UFNF131 UFNF132 UFNF133 100 Volt, 0.18 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability

UFN841

Abstract: UFN041 mosfet ir 840 features Hjc 22
Contextual Info: UNITRODE CORP 9347963 T2 UNITRODE DeT| T347Tb3 D01D7ÔÜ & CORP 92D 10780 D f~ *? - 3 POWER MOSFET TRANSISTORS [“ 500 Volt, 0.85 Ohm N-Channel FEATURES » Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown

Contextual Info: UNITRODE CORP 9347963 T2 UNITRODE CORP DE 1 ^ 3 4 7 ^ 3 92D 10572 D 2N6797 JTX, JTXV 2N6798 POWER MOSFET TRANSISTORS 200 Volt, 0.4 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability

Contextual Info: UNITRODE CORP iS 9347963 DE § ^ 3 4 7 ^ 3 GDlD7flb •=] U N I T R O D E CORP 92D 10786 POWER MOSFET TRANSISTORS D/-37-'*' UFN1130 700 Volt, 3.5 Ohm N-Channel FEATURES DESCRIPTION This new Unitrode power MOSFET utilizes the latest high voltage advanced technology

UFN541

Abstract: ufn540 FN540 k96a UFN543 UFN542 FN541
Contextual Info: TH 0G10714 t UNITRODE CORP 9347963 UNITRODE 92D CORP POWER MOSFET TRANSISTORS 100 Volt, 0.085 Ohm N-Channel FEATURES • C o m p act Plastic Package • Fast Sw itching • Low Drive C urrent • Ease of Paralleling • No Second B reakdow n 10714 UFN540 UFN541

ufn720

Abstract: UFN723 UFN721 15AQ
Contextual Info: UFN720 UFN721 UFN722 UFN723 POWER MOSFET TRANSISTORS 400 Volt, 1.8 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosum and a high transconductance. The Unitrode power MOSFET features all of the advantages of MOS technology such as

1G747

Contextual Info: UNITRODE CO RP 9347963 TE TS UNITRODE CORP D eT n |347ib3 DE 92D 10744 □□10744 4 D T '7 1 -1 POWER MOSFET TRANSISTORS 400 Volt, 3.6 Ohm N-Channel FEATURES • Compact Plastic Package » Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown

Contextual Info: T2 UNITRODE CORP 9347963 UNITRODE DE I ^ 3 4 7 ^ 3 □□10bû4 1 CORP 92D 10684 D f i- 3 J - / J POWER MOSFET TRANSISTORS 500 Volt, 0.85 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability

10561-D

Abstract: cib47
Contextual Info: UNITRODE CORP 9347963 UNITRODE T5 CORP DlT| =1347^3 DQlGShG 92D POWER MOSFET. TRANSISTORS 500 Volt, 3.0 Ohm N-Channel FEATURES • Fast Sw itching • Low Drive Current • Ease of P a ra llelin g • N o Second B reakdow n • Excellent T em p e ra tu re Stability