UFN230
Contextual Info: POWER MOSFET TRANSISTORS UFN230 UFN231 UFN232 UFN233 200 Volt, 0.4 Ohm N-Channel DESCRIPTION The U nitrode power M O SFET design utilizes the m ost advanced technology available. T his efficien t d esign achieves a very low R osiom and a high tran scon d u ctan ce.
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UFN232
Abstract: ufn230
Contextual Info: UNITRODE CORP 9347963 TE 92D UNITRODE CORP POWER MOSFET TRANSISTORS 200 Volt, 0.4 Ohm N-Channel c1 3 4 7 ci b 3 G D lG t,3 D 10630 U-jz UFN230 UFN231 UFN232 UFN233 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.
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IAf630
Abstract: sfn02804 RS630 BUZ73 sfn02204 SFN02814 tx134 sgsp567 SGSP367 2SK400
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max A) Po Max (W) ros (on) (Ohms) Toper Max Package Style N-Channel Enhancement-Type, (Cont'd) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 810 600p 60n 60n 2.0 1.3 1.3 1.3 1.3 600p 600p
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rrf6202sk7552sk782tx124+14irfj220sfn02804sfn02814sfn204a3ytf220ytf620iaf630rs630buz73sfn02204tx134sgsp567sgsp3672sk400
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Cross Reference power MOSFET
Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
Contextual Info: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258
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t0-204aat0-204aet0-220abt0-220ac+10cross reference power mosfetirf 3502 mosfetsd500kdirf3203mosfet irf equivalent booksem 2106 inverter diagramifr822diode byw 56buz41 equivalenttransistor f630
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UFN540
Abstract: UFN833 UPT613 UFNF130 UFN451 U2T105 U2T305 TQ-66 ufn432 UFN450
Contextual Info: N-CHANNEL POWER MOSFETS Vm ft»* «» Dram On-State Source •Resist ance Voltage Volts (Shuns) PRODUCT SELECTION GUIDE Is Continuous Drain Current :. . 1°« . Pulsed: . ÉwMiv Current Part ■ ‘lifcrtr: Numbers j : Càsja; (Amps) : Vos Drain. On-State
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u2ta506u2ta508u2ta510861-6s40+10ufn540ufn833upt613ufnf130ufn451u2t105u2t305tq-66ufn432ufn450
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ufnf230
Abstract: UFNF93H UFNF9 40 gd 4n diode UFN232
Contextual Info: POWER MOSFET TRANSISTORS HfflSI? 200 Volt, 0.4 Ohm N-Channel UFNF232 UFNF233 FEATURES • Fast S w itching • Low Drive Current DESCRIPTION The U nitrode power M O SFET d esign utilizes the m ost advanced technology available. T h is efficie n t design a ch ieves a very low R dsioih and a high tran scon d u ctan ce.
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ufnf232ufnf233ufn230ufn231+6ufn232ufn233ufnf230ufnf93hufnf940 gd 4n diode
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55ao
Abstract: UFNZ30
Contextual Info: POWER MOSFET TRANSISTORS UFNZ30 UFNZ32 50 Volt 0.05 Ohm N-Channel FEATURES D E S C R IP T IO N • • • • C o m p a ct Plastic Package Fast S w itc h in g L o w Drive C urrent Ease o f Paralleling These lo w v o lta g e p o w e r M O S FE TS have been d esigned fo r o p tim u m p e rfo rm a n c e in lo w
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equivalent data book of 10N60 mosfet
Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:
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1-800-4harrisequivalent data book of 10n60 mosfetmc14016cpgd4511+7an-6466cx 2859 smd74ac14 spice6120* harrishcf4018be7028 smd transistorspice irfbc40
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