IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
|
OCR Scan
|
irf 544 n mosfetspice 2 computer models for hexfets4af2npp irtransistor d586+6induction cooker fault finding circuit diagramstransistor mos fet d482electronics digesttransistor d357 equivalentd515 transistor1rf511
|
PDF
|
Cross Reference power MOSFET
Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
Contextual Info: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258
|
OCR Scan
|
t0-204aat0-204aet0-220abt0-220ac+10cross reference power mosfetirf 3502 mosfetsd500kdirf3203mosfet irf equivalent booksem 2106 inverter diagramifr822diode byw 56buz41 equivalenttransistor f630
|
PDF
|
UFN540
Abstract: UFN833 UPT613 UFNF130 UFN451 U2T105 U2T305 TQ-66 ufn432 UFN450
Contextual Info: N-CHANNEL POWER MOSFETS Vm ft»* «» Dram On-State Source •Resist ance Voltage Volts (Shuns) PRODUCT SELECTION GUIDE Is Continuous Drain Current :. . 1°« . Pulsed: . ÉwMiv Current Part ■ ‘lifcrtr: Numbers j : Càsja; (Amps) : Vos Drain. On-State
|
OCR Scan
|
u2ta506u2ta508u2ta510861-6s40+10ufn540ufn833upt613ufnf130ufn451u2t105u2t305tq-66ufn432ufn450
|
PDF
|
UFN342
Abstract: ufn340 4712 mosfet
Contextual Info: POWER MOSFET TRANSISTORS y ü° 400 Volt, 0.55 Ohm N-Channel UFN342 UFN343 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance. FEATURES
|
OCR Scan
|
ufn342ufn343ufn340ufn341+3661-654qtelex95-10644712 mosfet
|
PDF
|
GG 06
Abstract: VN35010
Contextual Info: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min (5) Max (V) Ciss Max (F) tr Max (s) tf Max (8) Toper Max (OC) Package 5tyle N-Channel Enhancement-Type, (Co nt' d) 5 10 UFN733 2N6759 SFN333 MTM5N35
|
Original
|
ufn7332n6759sfn333mtm5n35+3mtp5n35vn35010gg 06
|
PDF
|
MOS 6509
Abstract: 400v 50A DIODE
Contextual Info: UNITRODE CORP 9347963 TS UNITRODE CORP DGlDbbQ 1 920 10660 DT' ^ /i POWER MOSFET TRANSISTORS 400 Volt, 0.55 Ohm N-Channel UFN342 UFN343 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available, This efficient design achieves a very low Rosiom and a high transconductance.
|
OCR Scan
|
ufn342ufn343ufn341ufn340+2mos 6509400v 50a diode
|
PDF
|