UNITED DETECTOR SILICON Search Results

United Detector Technology Photodiodes

Abstract: United Detector Technology United Detector Technology, silicon photodiode United Detector silicon photodiode PIN-3DP PIN-10D United Detector Technology photodiode 601 Opto isolator PIN-25D United Detector Technology 10dp
Contextual Info: PIN SERIES PLANAR-DIFFUSED SILICON PHOTODIODES LJ UNITED DETECTOR TECHNOLOGY 9310987 UNITED DEÍECTOR UNITED V 64C 0 0 7 8 7 "bM DETECTOR T-41-53 BICHA 7 □ 00D 7fl? h | ~ PIN SERIES PLANAR-DIFFUSED SILICON F •f ! M • D SERIES PIN PHOTODIODE SPECIFICATIONS

UDT-PIN-10AP

Abstract: UDT-PIN United Detector Technology Photodiodes United Detector Technology United Detector Technology photodiode UDT 260 detector PIN-10AP United Detector silicon photodiode United Detector Technology, silicon photodiode PIN-10DF
Contextual Info: 48C 00681 9310987 UNITED DETECTOR UNITED DETECTOR UNITED D E T E C T O R DE 4fl T-41-53 r DETECTOR/FI LTER COMBINATIONS DDDDtfll 1 •HI! T EC H N O LO G Y D A TA S H E E T 9F006 DETECTOR/FILTER COMBINATIONS PIN - 10AP PIN - lO D FP — PIN - 10RP -C.I.E.-fHO'TOPIC H U M AN ÊYEJ

United Detector Technology Photodiodes

Abstract: United Detector Technology United Detector silicon UNITED DETECTOR C 2458 A2V-16 United Silicon
Contextual Info: 84D 00964 03 10987 UNITED DETECTOR UNITE» DETECTOR AM D T-41-55 »F§'J31D‘lfi7 0D0Dcib4 5 United Detector Technology A Division of Technology’, Inc. f ILC 12525 Chadron Avenue • Hawthorne, California 90250 • 213 978-0516 Telex Number 18-2458 Fax Number (213) 644-1727

301B-AC

Abstract: United Detector Technology United Detector Technology Photodiodes FIL-C10D udt sc 10 United Detector Technology, silicon photodiode UDT 260 C10D FIL-100C fil 3c
Contextual Info: 77C 00841 d ~ r~ 77 DË T | ' m O T à ? 9310987 UNITED DETECTOR UNIT E» DETECTOR SILICON PHOTODIODES dOGOflm fl FIL* PHOTOCONDUCTIVE DEVICES PC \ : \ Parameter & Unit Active Surface Area . Typ. Junction •; ; Capacitance-C j. ' Typical . Responsivity-R\

Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

United Detector silicon photodiode

Abstract: near IR photodiodes centronic photodiodes photodetector centronic package 1
Contextual Info: Electro-Optics Silicon Photodiodes HYBRID PHOTODETECTOR NEW www.centronic.us Amplified Single Element Detector ASD Series Centronic ASD Series integrate high performance single element photodiodes coupled to a high input impedance opamp to create a low noise, high gain photodetector. Light

Contextual Info: Laser Diodes 500um General PurposePhotoDiodes Silicon PhotoDiodes 1 mmDiameter Diameter InGaAs PD-LD Inc. offers a 500um diameter photoconductive Silicon Photodiode suitable for applications requiring response times of up to 6nsec. The planar diffused device

C2719

Abstract: K1713-01 Hamamatsu PbS TWO COLOR DETECTOR UV Flame detector pbs photoconductive DETECTOR FLAME A3179-03 C1103-04 K1713-02
Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

Hamamatsu PbS

Abstract: K1713-02 K3413-01 K3413-02 A3179-03 C1103-04 C2719 C3757-02 K1713-01
Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

Hamamatsu PbS

Abstract: United Detector silicon photodiode A3179-03 C1103-04 C3757-02 C9329 K1713-01 K1713-02 K3413-01 K3413-02
Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

C1103-04

Abstract: flame detector structure K1713 TWO COLOR DETECTOR two color photodiode Hamamatsu PbS DETECTOR FLAME Semiconductor Radiation Detector SI PBS DETECTOR transistor 1BW
Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

4n33 schematic

Abstract: 4N33 Data sheet 4N33 4N32 4N29 APPLICATION NOTE 4N32 test circuit 4N29 4N30 4N31
Contextual Info: GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. 4N29 4N30 4N31 4N32 4N33 FEATURES • High sensitivity to low input drive current

optocouplers 501

Abstract: H11BX CNX48U TIL113 H11B1 H11B255 optocouplers 501 IC H11B2 H11B3 MOC8080
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current

4N33 APPLICATION NOTE

Abstract: Fairchild 4N32 4N33 4N32 4N29 4N30 4N31
Contextual Info: GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. 4N29 4N30 4N31 4N32 4N33 FEATURES • High sensitivity to low input drive current

Contextual Info: Electro-Optics Silicon Photodiodes HYBRID PHOTODETECTOR www.centronic.co.uk Amplified Single Element Detector ASD Series Centronic ASD Series integrate high performance single element photodiodes coupled to a high input impedance opamp to create a low noise, high gain photodetector. Light

DBM13-34

Abstract: QFN16L STB7720
Contextual Info: STB7720L 2.4-2.5 GHz Silicon Linear Power Amplifier IC PRELIMINARY DATA FEATURES SUMMARY • EXCELLENT LINEARITY EVM 2% @ 19dBm WITH 802.11g OFDM 54Mb/s MODULATION Figure 1. Package • VERY LOW QUIESCENT CURRENT (60mA) • INTEGRATED LINEAR ANALOG CONTROL FOR

L40205

Contextual Info: ML 4000 SERIES SILICON SCHOTTKY DETECTOR DIODES These low barrier diodes are suitable for use in waveguide, coaxial and stripline applications. They feature high sensitivity, and low I/F noise. These diodes are listed by increasing frequency, grouped by package style and T„. Other

Quality Technologies optocouplers

Abstract: B613 IC 1296 QT OPTOELECTRONICS MOC8030 MOC8050 PONT DIODE 0884 qt
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS Preliminary NO BASE CONNECTION MOC8030 MOC8050 DESCRIPTION PACKAGE DIMENSIONS The MOC8030 and MOC8050 are photodarlington-type optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor.

Contextual Info: Laser Diodes Standard-Area Silicon PIN Photodiodes 500µm PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs in fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our Silicon devices cover the optical spectrum

tunnel junction diode

Abstract: tunnel diode high frequency metal detectors circuit "tunnel diode" chip assembly Detectors - Diode ml7700 TUNNEL DIODE diode tunnel
Contextual Info: DETECTORS ML 7700-0000 Series DETECTORS 0.1 TO 18.0 GHz FEATURES ♦ Schottky & Tunnel Diode ♦ Limiter Detectors ♦ Broad Frequency Ranges ♦ High Sensitivities ♦ Coaxial & Drop-in DESCRIPTION The M /A -CO M Ltd detector range uses both silicon based Schottky barrier diodes and germ anium based tunnel diodes.

4n33 schematic

Abstract: QT OPTOELECTRONICS 4N29 APPLICATION NOTE 4N29 4N33 Data sheet 4N30 4N31 4N32 4N33
Contextual Info: GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. 4N29 4N30 4N31 4N32 4N33 FEATURES • High sensitivity to low input drive current

a140mW

Abstract: H11B815 4pin diode
Contextual Info: 4-PIN PHOTODARLINGTON OPTOCOUPLERS H11B815 DESCRIPTION The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual in-line package. 4 4 FEATURES • Compact 4-pin package • Current Transfer Ratio: 600% minimum at IF = 1 mA