UNELCO TRIMMER CAPACITOR Search Results

MRF247

Abstract: mica trimmer capacitor unelco mica trimmer capacitor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line N PN Silico n RF Pow er T ransistor The M R F247 is designed for 12.5 Volt V H F large-signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz. • Specified 12.5 Volt, 175 MHz Characteristics —

mrf247

Abstract: amplifier mrf247 CAPACITOR SPRAGUE L5150
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF247 The MRF247 is designed for 12.5 Volt VHF large-signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz. • Specified 12.5 Volt, 175 MHz Characteristics —

MRF247

Abstract: MOTOROLA 381 equivalent vk 200 amplifier mrf247
Contextual Info: MOTOROLA Order this document by MRF247/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF247 The MRF247 is designed for 12.5 Volt VHF large–signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz.

amplifier mrf247

Abstract: MRF247 Capacitance j107 j113 equivalent mica capacitor Diode Motorola 316 mica trimmers capacitors
Contextual Info: MOTOROLA Order this document by MRF247/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF247 The MRF247 is designed for 12.5 Volt VHF large–signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz.

DV2820

Abstract: SD1902
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFETs Designed prim arily for w ideband large-signal output and driver from 3 0 -5 0 0 MHz. • Low C rss — 4.5 pF @ V ds = 28 V • MRF166C — Typical Performance at 400 MHz, 28 Vdc

MRF321

Abstract: ferroxcube 56-590-65
Contextual Info: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon MRF321 RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range.

vk200 coil

Abstract: FERROXCUBE VK200 jmc 5201
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 1 0 Watts

sd1902

Abstract: MRF166 J126
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field E ffect Transistors MRF166C N-Channel Enhancement Mode MOSFETs Designed primarily for wideband large-signal output and driver from 30-500 MHz. • Low Crss — 4.5 pF Vns = 28 V •

jmc 5201

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPH Silicon RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts

TP2180

Abstract: RF POWER TRANSISTOR NPN, motorola arco TRIMMER capacitor arco TRIMMER capacitor 425 313 Motorola arco 423 trimmer
Contextual Info: 1 SÉ D I fc,3 b ? 2 S 4 MOTOROLA MOTOROLA SC GOflflaat, X S T R S /R T - S 3-13 s | F SEMICONDUCTOR TECHNICAL DATA TP2180 The RF Line V H F P o w e r T ra n sis to r 80 W — 88 M H z V H F POWER TRANSISTOR NPN SILICON Designed for use in 12.5 V VHF amplifiers operating under Class A, B or C conditions.

vk200 coil

Abstract: jmc 5201 ferroxcube 56-590-65 VK200-19 FERROXCUBE VK200
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n RF P o w er T ran sisto r . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range. 10 W, 400 MHz RF POWER TRANSISTOR NPN SILICON

DL110

Abstract: VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF275L VK200 sony+IMX+179
Contextual Info: Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single

5251f

Contextual Info: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET ARCHIVE INFORMATION Designed for broadband commercial and military applications using single

VK200 19 4B INDUCTOR

Abstract: arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single

UNELCO

Abstract: S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor
Contextual Info: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single

VK200 inductor of high frequencies

Abstract: VK200 INDUCTOR
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F175LV M R F175LU The RF MOSFET Line RF P o w er F ie ld -E ffe ct Transistors N-Channel Enhancement-Mode 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER FETs . . . designed for broadband commercial and military appli cations using single

VK200 INDUCTOR

Abstract: inductor vk200 VK200 inductor of high frequencies
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistors MRF175LU MRF175LV N-Channel Enhancement-Mode Designed for broadband com m ercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

transistor MRF321

Abstract: JMC5201 redcap erie redcap capacitors vk200 coil erie redcap vk200 1N4001 MRF321 case 244-04
Contextual Info: Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc

MRF327

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF327 NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band

J115 mosfet

Abstract: MRF175LU
Contextual Info: MOTOROLA SEM ICO NDU CTO R TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect T ransistors MRF175LU M RF175LV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

Contextual Info: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode . . . designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

inductor vk200

Abstract: VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF175LU MRF175LV VK200 J115 mosfet Nippon capacitors VK200 4B inductor
Contextual Info: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

VK200 INDUCTOR

Abstract: inductor vk200
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power F ield -E ffect Transistors MRF175LU MRF175LV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

trw RF POWER TRANSISTOR

Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
Contextual Info: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .