REDCAP Search Results

lcd Data International Co., Ltd p98

Abstract: P926 p917 redcap P932
Contextual Info: S1D13706 Embedded Memory LCD Controller Interfacing to the Motorola RedCap2 DSP With Integrated MCU Document Number: X31B-G-014-03 Copyright 2001 - 2009 Epson Research and Development, Inc. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in

transistor MRF317

Abstract: atc 1117 case 316-01 RF POWER TRANSISTOR NPN mrf317 8w RF POWER TRANSISTOR NPN vk200 J102 MRF317 1117 atc
Contextual Info: Order this document by MRF317/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF317 . . . designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc

transistor MRF317

Abstract: MRF317 mrf317 datasheet RF POWER TRANSISTOR NPN mrf317 J102 VK200 mrf317" "100 6W" motorola rf Power Transistor mrf317
Contextual Info: MOTOROLA Order this document by MRF317/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF317 . . . designed primarily for wideband large–signal output amplifier stages in 30 – 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc

Johanson Piston Trimmer

Abstract: J154 J329 J253 vk200 erie redcap capacitors MRF327 NPN RF Amplifier
Contextual Info: Order this document by MRF327/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF327 . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc

2N6985

Abstract: lg system ic transistor ac 125 equivalent
Contextual Info: MOTOROLA SC XSTRS/R F b'iE » b3b?25M D1DD120 703 MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 400 MHz frequency range.

epson smd floppy

Abstract: ir3e203 4046 analog IC smd A9A smd diode g5 zener smd T4C S1D13706 S1D13A03 db-15 pin connector vga adapter X37A-A-001-xx
Contextual Info: S1D13A03 LCD/USB Companion Chip S1D13A03 TECHNICAL MANUAL Document Number: X36A-Q-001-01 Copyright 2001 Epson Research and Development, Inc. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

j325

Abstract: erie redcap capacitors MRF1002MA MRF1002MB
Contextual Info: MOTOROLA Order this document by MRF1002MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1002MA MRF1002MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.

74HCT244B1

Abstract: epson 320X240 MC68K Sharp HR TFT PNP power transistors by hitachi p948 MC68EZ328 VR4181A user manual
Contextual Info: S1D13706 Embedded Memory LCD Controller S1D13706 TECHNICAL MANUAL Document Number: X31B-Q-001-06 Copyright 2001 Epson Research and Development, Inc. All Rights Reserved. Information in this document is subject to change without notice.You may download and use this document, but only for your own use in

Micropower Buffered Variable Voltage

Abstract: PFBGA 160x240
Contextual Info: S1D13708 Embedded Memory LCD Controller S1D13708 TECHNICAL MANUAL Document Number: X39A-Q-001-01 Copyright 2001 Epson Research and Development, Inc. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in

MRF327

Abstract: Johanson Piston Trimmer
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF327 . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band

mrf317"

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . designed primarily for wideband large-signal output amplifier stages in 30-200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W Minimum Gain = 9.0 dB

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed prim arily for wideband large-signal driver and predriver am plifier stages in the 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF174 The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode . . . designed primarily for wideband large-signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc

56-590-65

Abstract: MRF325 jmc 5201 565-9065
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 30 Watts

MRF317

Abstract: transistor MRF317
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed prim arily for w ideband large-signal output am plifier stages in 3 0 -2 0 0 MHz frequency range. • • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF327 . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band

SELF vk200

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. 5.0 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER

transistor c 2335

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF392 The RF Line NPN Silicon Push-Pull RF Power TVansistor . . designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 500 MHz frequency range. 125 W, 30 to 500 MHz CONTROLLED "Q”

2482 npn

Abstract: 2482 TRANSISTOR
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF326 . . . designed prim arily for w ideband large-signal output am plifier stages in the 100 to 500 MHz frequency range. • G uaranteed Performance @ 400 MHz, 28 Vdc Output Power = 40 Watts

transistor c 2316

Contextual Info: MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA MRF323 The RF Line NPN Silicon RF Power Transistor . . designed primarily for wideband large-signal driver and predriver amplifier stages in the 2 0 0 - 5 0 0 M H z frequency range. 20 W, 400 MHz RF POWER TRANSISTOR

transistor KA 7808

Abstract: RF134
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal am plifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance

s1d13706f00a

Abstract: VR4102 160x240 rgb 320x240 on semiconductor r640 MC68000 MC68030 MC68K S1D13706 MOTOROLA d11
Contextual Info: S1D13706 Embedded Memory LCD Controller Hardware Functional Specification Document Number: X31B-A-001-09 Copyright 1999, 2004 Epson Research and Development, Inc. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in

Triode 805

Abstract: Arco 403 arco 406 motorola diode 8296 ZENER A34 1N5925A AN215A AN721 MRF134 MRF134 - 176
Contextual Info: Order this document by MRF134/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF134 N–Channel Enhancement–Mode . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance