UN823 Search Results

UNR8231

Abstract: UNR8231A
Contextual Info: Transistors with built-in Resistor UNR8231/8231A UN8231/8231A Silicon NPN epitaxial planar type Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) M Di ain sc te on na tin nc ue e/ d (1.0) (0.2) 4.5±0.1 0.7 • Features 0.65 max. 14.5±0.5 (1.0) ue pl d in an c se ed lud

UNR8231

Abstract: UNR8231A
Contextual Info: Transistors with built-in Resistor UNR8231/8231A UN8231/8231A Silicon NPN epitaxial planar type Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) (1.0) (0.2) 4.5±0.1 0.7 • Features 0.65 max. 14.5±0.5 (1.0) • High forward current transfer ratio hFE • Resistor built-in type, allowing downsizing of the equipment

UNR8231

Abstract: UNR8231A
Contextual Info: Transistors with built-in Resistor UNR8231/UNR8231A UN8231/UN8231A Silicon NPN epitaxial planer transistor Unit: mm 0.7 • Absolute Maximum Ratings Parameter Collector to base voltage (Ta=25˚C) Symbol UNR8231 UNR8231A UNR8231 Collector to emitter voltage UNR8231A

YTS2222A

Abstract: YTS3904 YTS3905 YTS2222 YTS3903 UN9217 YTS4125 YTS2221 YTS2221A YTS2907
Contextual Info: - 348 - Ta=25tC, *EP(àTc=25‘ C ft £ ffl UN8231A ÍÜT Digital UN9110 töT & VcBO VcEO Ic(DC) Pc Pc* (V) (V) (A) <W) (W) m ICBO (max) (/¿A) VcB (V) % (min) w & (max) tí VCE (V) (Ta=25‘ C) Ic / I e (A) [*EPÍátypfiSJ (max) (V) (V) le (A) Ib (A) 60

Contextual Info: Transistors with built-in Resistor UNR8231/8231A UN8231/8231A Silicon NPN epitaxial planar type Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) (1.0) (0.2) 4.5±0.1 0.7 • Features 0.65 max. 14.5±0.5 (1.0) M Di ain sc te on na tin nc ue e/ d • High forward current transfer ratio hFE

UN823

Abstract: UN8231 UN8231A
Contextual Info: Transistors with built-in Resistor UN8231/UN8231A Silicon NPN epitaxial planer transistor Unit: mm 1.05 2.5±0.1 ±0.05 6.9±0.1 0.7 4.0 0.8 ● 0.65 max. 14.5±0.5 High forward current transfer ratio hFE. Resistor built-in type, allowing downsizing of the equipment and

UNR8231

Abstract: UNR8231A
Contextual Info: Transistors with built-in Resistor UNR8231/UNR8231A UN8231/UN8231A Silicon NPN epitaxial planer transistor Unit: mm 1.05 2.5±0.1 ±0.05 6.9±0.1 0.7 4.0 0.8 ● 0.65 max. 14.5±0.5 High forward current transfer ratio hFE. Resistor built-in type, allowing downsizing of the equipment and

UN7000

Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
Contextual Info: Pakage No. Rb Ik Q ) Rst <kO) New S Type(D34) S-Mini Type(D5) M Type{D35) Mini Type(D12) (Pc =400m W , 600mW M 1W '2) (Pc = 200mW) (Pc=300m W ) (Pc — 150mW) PNP PNP NPN PNP MT1 Type(D37) (Pc =400m W , 600mW*1 ) Mini-Power MT2 Type(D38) (P c= 1W ) (Pc=125m W )

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

1k MT

Abstract: ml5212 UN6211 schematic diagram washing machines UN5217 UN5218 UN5219 UN6110 IM6114 UN6113
Contextual Info: - 34 6 - Ta=25'C (Ta=25£C, *Ep(ÌTc=25<C) m UN5216 UN5217 UN5218 UN5219 UN6110 UN6111 UN 6112 UN6113 UN 6114 UN6115 UN6116 UN6117 UN6118 UN 6119 IINB121 UN6122 UN6123 UN6124 UN6210 UN 6211 ITMC01 0 UN6213 UN6214 UN6215 UN6216 UN6217 UN6218 UN6219 UN6221

equivalent transistor n 4212

Abstract: N 4212 N4212 N111F N621D un4115 un1211 un4211 equivalent
Contextual Info: Series N am e Pakage No. R esistance value Rbe Rb ik O ) <kQ) UN1000 Series UN2000 Series U N 2000T Series UN4000 Series UN5Û00 Series UN6000 Series UN7000 Series UN8000 Series U N9000 Series M T 2 T y p e (D 3 8 ) SS Mini Type (D1) (P c = 1 W ) (P c = 1 2 5 m W )