UN211M Search Results

UN211M

Abstract: XP0111M
Contextual Info: Composite Transistors XP0111M Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UN211M x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element 0.12 – 0.02

UN211M

Abstract: XN111M
Contextual Info: Composite Transistors XN111M PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN211M x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element 0.16 -0.06

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0411M (XP411M) Silicon PNP epitaxial planar type 0.2±0.05 6 Unit: mm (0.425) For switching/digital circuits 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0111M (XN111M) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Basic Part Number 2 0.4±0.2 5 2.8+0.2 –0.3 • Two elements incorporated into one package

MB4213

Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Contextual Info: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors

UN211M

Abstract: UNR211M XN0111M XN111M
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0111M (XN111M) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 2 1.1+0.2 –0.1

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

UN211M

Abstract: UNR211M XN0111M XN111M
Contextual Info: Composite Transistors XN0111M XN111M Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Basic Part Number 2 0.4±0.2 5 2.8+0.2 –0.3 • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor)

UN211M

Abstract: UNR211M XP0111M
Contextual Info: Composite Transistors XP0111M Silicon PNP epitaxial planar type Unit: mm 0.425 For switching/digital circuits 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half

UN211M

Abstract: UNR211M XP0411M XP411M
Contextual Info: Composite Transistors XP0411M XP411M Silicon PNP epitaxial planar type 0.2±0.05 6 Unit: mm (0.425) For switching/digital circuits 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half

5pin marking VJ

Abstract: marking AE 5pin AX05 N2211 9p marking 2SD601 Z 211H
Contextual Info: ^ S 5 S S í / ^ y*T — V Mini Type (5-pin) Package FET Transistors, FETs U n it : mm »•»fri i s-8:8t 0.6510.15 5 - M ( 5 îS i) /N " ^ - v ■>'■Ÿ < "J * T - X 7 ( i , S£#<D$ - m m v t m -E E } v n -S 3 - 4 b 7 > > * 2 4' a (7>a^-ib ft Jfc L t i l

equivalent transistor n 4212

Abstract: N 4212 N4212 N111F N621D un4115 un1211 un4211 equivalent
Contextual Info: Series N am e Pakage No. R esistance value Rbe Rb ik O ) <kQ) UN1000 Series UN2000 Series U N 2000T Series UN4000 Series UN5Û00 Series UN6000 Series UN7000 Series UN8000 Series U N9000 Series M T 2 T y p e (D 3 8 ) SS Mini Type (D1) (P c = 1 W ) (P c = 1 2 5 m W )

KF6N60

Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Contextual Info: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION

D1915

Abstract: D1915 Transistors TRANSISTOR D1915 c3904 D1915 transistor B709A A1022 xp5555 XN4501 XP1201
Contextual Info: Transistors Selection Guide by Applications and Functions •5 Pin S Mini Type (D6) *5 Pin Mini Type (D11) *6 Pin S Mini Type (D7) *6 Pin Mini Type (D12) Package Transistor, FET A Preliminary # Resistor Built-in Transistors (XN: 5 and 6 Pin Mini Type Package, XP: 5 and 6 Pin S Mini Type Package)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0111M Silicon PNP epitaxial planar type Unit: mm (0.425) For switching/digital circuits 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package

XP1201

Abstract: XN421 XP1101
Contextual Info: Transistors Selection Guide by Applications and Functions # Resistor Built-in Transistors (XN: 5 and 6 Pin Mini Type Package, XP: 5 and 6 Pin S Mini Type Package) 6 Pin S Mini Type (D9), 6 Pin Mini Type (D16) 5 Pin S Mini Type (D8), 5 Pin Mini Type (D15)

UN211H

Abstract: UN2211
Contextual Info: Transistors Selection Guide by Applications and Functions # Transistors with built-in Resistor (XN: 5- and 6-Pin Mini Type Package, XP: 5- and 6-Pin S-Mini Type Package) 136 Panasonic Transistors (Selection Guide by Applications and Functions) Main Characteristics