UM 42A Search Results

ESAN

Abstract: 42A-5250 42A-5125 42A-5500 42A-5101 42A-5151 42A-5201 42A-5251 42A-5750
Contextual Info: E-SAN ELECTRONIC CO LTD Active Delay Line TTL Interface D Specifications: 3037HDE DDODDEfl T • / 3 42A Series Features: • Delay tolerance Rise time Temp, coefficient Operating Temp. Range M inim um Pulse W idth Supply Voltage Logic 1 Input current Logic 0 Input current

Contextual Info: ANALOG ► DEVICES FEATURES Com plete 10-Bit, 40 MSPS Dual Transm it DAC Excellent Gain and Offset Matching D ifferential Nonlinearity Error: 0.5 LSB Effective N um ber of Bits: 9.5 Signal-to-Noise and Distortion Ratio: 59 dB Spurious-Free Dynamic Range: 71 dB

Esan

Abstract: 42A-5151 42A-5101 42A-5125 42A-5201 42A-5250 42A-5251 42A-5500 42A-5750
Contextual Info: E-SAN ELECTRONIC CO LTD Active Delay Line TTL Interface D Specifications: Rise time Temp, coefficient Operating Temp. Range M inim um Pulse W idth Supply Voltage Logic 1 Input current Logic 0 Input current Logic 1 Output Logic 0 Output Logic 1 Fan out Logic 0 Fan out

Contextual Info: 2.3" Single Digit Alpha N um eric Display FEATURES • 2.3" digit height ■ Right hand decimal point ■ Choice of six colors/materials OPTO-ELECTRICAL CHARACTERISTICS Ta = 25°C EM ITTED COLOR VF|VJ 8 0 APACE COLOR EPOXY COLOR If Cm*} VR PIN OUT » IM »

Brain Box Mini 88 plus manual

Abstract: MILITARY QUALIFIED DIP SWITCHES 95B04RA pico fuses color coding 3x4 keypad grayhill 71BD36-3119 grayhll DYNAMICS RESEARCH CORP. ENCODERS KSH 200 TRANSISTOR Cross reference 78M02S
Contextual Info: N um ber 1 A n ISO -9001 C om pany Product Catalog M o n tre a l • O ttaw a • Toronto • W innipeg • Calgary • Vancouver Lannie Reynolds Account Manager -W.T.I. Manufacturers Representatives li. 7370 Bramalea Road, Unit 6617, Mississauga, Ontario L5S1N6

APT5012LNB

Abstract: APT5012LNR APT5012L
Contextual Info: ADVANCED PO W ER Te c h n o lo g y O D APT5012LNR Ô S 3* WER MOS 500V 42.0A 0.12Ü AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIM UM RATING S Symbol VDSS 'o ' dm VGS VGSM All Ratings: T c = 25°C unless otherwise specified.

Contextual Info: A dvanced P o w er Te c h n o l o g y O D APT5012LNR O S POWER MOS IV 500V 42.0A 0.12Q AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIM UM RATING S Symbol V DSS 'd All Ratings: T c = 25°C unless otherwise specified. Parameter

82538

Abstract: SAB82538H SAB82538-H
Contextual Info: SAB 82538 SAF 82538 SIEM ENS Electrical S p ecificatio n 5.1 A b so lu te M axim um R atings S upply volta ge I Input voltage O utput voltage S torage tem pe rature I] 'I n = - 0.3 to + 7.0 V = - 0.3 to I = - 0.3 to / = - 65 to + I 7SIt, nn + 0.3 V m ax. 7 V)

Contextual Info: Thyristors - TRIAC's T h e plastic m aterial carries U /L reco g n itio n 9 4 V-O. TYPE M ax. R epetitive P eak O ff - State V oltage, G ate O pen TJ=110 °C Note 1 V drm (V) M axim um RMS O n - State C u rren t @ Conduction Angle of 360° and Tc=80 ° C

Contextual Info: mm TRANSIENT VOLTAGE SUPPRESSORS cont. (ELECTRICAL CHARACTERISTICS @ 25 C) TEL: 805-498-2111 FAX : 805-498-3804 1500 WATT AXIAL LEAD - HERMETIC QPL 1N6138ATHRU 1N6173A BIDIRECTIONAL D evice Type 1 N 6138A 1N 61 39A 1N 61 40A 1N 61 41A 1N 61 42A 1N 61 43A

DL42A

Contextual Info: 1D L 42A TOSHIBA TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE 1 DL42A Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS Repetitive Peak Reverse Voltage : V r r m = 200 V Average Forward Current : If (AV) = 1.0A Very Fast Reverse-Reeovery Time : trr = 35 ns (Max.)

Contextual Info: L TIP41, TIP41A, TIP41B, TIP41C TIP42, TIP42A, TIP42B, TIP42C TIP 41, 41 A, 41 B, 41C TIP 4 2 ,42A, 42B, 42C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications DIM A B C D E F G H J K L M N MIN

Contextual Info: RFP42N03, RF1S42N03, RF1S42N03SM 42A, 30V, 0.025 Ohm, N-Channel Power MOSFETs March 1998 Features Description • 42A,30V • UIS Rating Curve The RFP42N03, RF1S42N03 and RF1S42N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching

ARM1136J-S

Abstract: ELDEC TOSHIBA TC160 ARM1136J TOSHIBA cmos image 1995 tc190c CMOS GATE ARRAYs toshiba TC190G TC280 Celaro
Contextual Info: 2007-3 PRODUCT GUIDE CMOS ASICs To ensure competitiveness in the marketplace, you will need to produce more sophisticated, more technology-intensive and higher value-added products, using a process of technological innovation and systematic marketing. Toshiba's application-specific

f42n03l

Abstract: 2n03l 42N03L F42N03 RFP42N03L T0263AB 32 N03L RF1S42N03L RF1S42N03LSM F1S42N
Contextual Info: H A F R F R I S semi conductor RFP42N03L, R F 1 S 4 2 N03L, R F1S42N 03LSM 42A, 30V, 0.025Q, N-Chan nel Logic Level Power M O S F E T s March 1997 F e a tu re s D e s c rip tio n • 4 2 A ,3 0V The RFP42N03L, RF1S42N03L, and RF1S42N03LSM are N-Channel power MOSFETs manufactured using the

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

Contextual Info: FAST RECOVERY 3-PHASE FULL WAVE BRIDGE RECTIFIERS January 16, 1998 SC3BK05F SC3BK1F SC3BK2F SC3BK4F TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com FAST RECOVERY, HIGH CURRENT 3-PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLIES • Q UICK REFERENCE

Elantec High Performance Analog Integrated Circuits 1994 Elantec Inc

Abstract: EL444
Contextual Info: HIGH PERFORMANCE ANAUDG INTEGRATED CIRCUITS Features • U n ity or + 2-gain bandw idth of 80 M H z • 70 dB off-channel isolation at 4 MHz • D irectly drives high-im pedance or 75fl loads • .02% and .02° differential gain and phase errors • 8 ns sw itching tim e

TIP41CF

Abstract: TIP41F TIP41AF TIP41BF TIP42BF TIP42F
Contextual Info: _ PHILIPS TIP42F; 42A F TIP42BF; 42CF J^ INT ERN AT ION AL SbE D • 7110ÛSb Ü04354S 15Û « P H I N r - 3 ? - / < 7 SILIC O N EPITAXIAL P O W E R T R A N S IS T O R S PNP silicon epitaxial power transistors, e a c h in a S O T 1 8 6 envelope with an electrically insulated

ps 4512 diode

Abstract: SS44A P61089 PS-4512 diode
Contextual Info: T1SP61089 DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS NOVEMBER 1995 - R EVEED JAN U A W 199« PROGRAMMABLE SLIC OVERVOLTAGE PROTECTION • • Dual Voltage-Programmable Protectors - Wide 0 to -80 V Programming Range - Low 5 mA max. Gate Triggering Current

7z32

Abstract: bu 517 BDT41AF BDT41BF BDT41CF BDT41F BDT42BF BDT42F 7Z329
Contextual Info: N AMER PHILIPS/ D I S C R E T E 2SE il m D ^53^31 GQn?37 3 • BDT42F; 42AF; BDT42BF; 42CF - 3 3 - / 7 T SILICON EPITAXIAL POW ER TRA N SISTO R S PNP silicon epitaxial power transistors, each in a S O T 1 8 6 envelope with an electrically insulated mounting base.

transistor 431A

Abstract: 4925 B equivalent ic 38c45bm 38C45BN transistor 431b 38C43BN 38c43bm h a 431a transistor 38c42 38c44bm
Contextual Info: MIC38 42/3/4/5, MIC18 42/3/4/5 BiCMOS Current-Mode Pwivi Controller Preliminary Information General Description Features The M IC38C4x and MIC38HC4x are fixed frequency, high perform ance, current-m ode PWM controllers. M icrel’s BiCMOS devices are pin compatible with 384x bipolar de­

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431AJ

Abstract: 8 pin ic 3844 for 5 volts 45BJ 8 pin IC UC3842 smps design Siemens pwm ic 3842 pin diagram of ic 3843 circuit diagram smps power supply using IC 3842 a IC38C44-1 IC38C45-1
Contextual Info: MICI 8C42/M1C18HC42 Family BiCMOS Current Mode Switching Regulator Preliminary Information General Description Features The MIC18C42 family of devices are fixed frequency, high performance current mode PWM controllers. Although fully pin compatible with the bipolar 3842 family of controllers, the