TA49235 Search Results

RF1S42N03

Abstract: F1S42N
Contextual Info: RFP42N03, RF1S42N03, RF1S42N03SM S E M I C O N D U C T O R 42A, 30V, 0.025 Ohm, N-Channel Power MOSFETs March 1998 Features Description • 42A, 30V • UIS Rating Curve The RFP42N03, RF1S42N03 and RF1S42N03SM N-Channel power MOSFETs are manufactured using the MegaFET

mosfet 4430

Abstract: 4433 mosfet rfd20n03sm9a RFD20N03 RFD20N03SM TB334 AN9321 AN9322
Contextual Info: RFD20N03, RFD20N03SM Data Sheet 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,

D203S

Contextual Info: RFD20N03, RFD20N03SM Data Sheet Title FD2 03, D20 3S bt A, V, 25 m, anwer OSTs utho July 1999 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs Features The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of

TA49235

Abstract: 20n03
Contextual Info: integri I RFD20N03, RFD20N03SM D ata S heet 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs The R FD 20N 03 and R F D 20 N 03 S M N-Channel power M O S F E Ts are manufactured using the M egaFET process. J u ly 1999 F ile N u m b e r 4 3 5 0 .1 Features • 20A, 30V

AN9321

Abstract: AN9322 RFD20N03 RFD20N03SM RFD20N03SM9A TB334 54E-1
Contextual Info: RFD20N03, RFD20N03SM Data Sheet 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,

TA49235

Abstract: 99E-1 rfd20n diode 736
Contextual Info: RFD20N03, RFD20N03SM S E M I C O N D U C T O R 20A, 30V, 0.025 Ohm, N-Channel Power MOSFET November 1997 Features Description • 20A, 30V The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI

Contextual Info: RFD20N03, RFD20N03SM Semiconductor Data Sheet 20A, 30 V, 0.025 Ohm, N-Channel Power MOSFETs The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,

Contextual Info: RFP42N03, RF1S42N03, RF1S42N03SM 42A, 30V, 0.025 Ohm, N-Channel Power MOSFETs March 1998 Features Description • 42A,30V • UIS Rating Curve The RFP42N03, RF1S42N03 and RF1S42N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching

RFP42N03

Abstract: F1S42N
Contextual Info: HARRIS S E M I C O N D U C T O R RFP42N03, RF1S42N03, RF1S42N03SM 42A, 30V, 0.025 Ohm, N-Channel Power MOSFETs March 1998 Features Description • 42A, 30V • UIS Rating Curve The RFP42N03, RF1S42N03 and RF1S42N03SM N-Channel power MOSFETs are manufactured using the MegaFET