UJ11 Search Results

Contextual Info: FLM3742-25DA F, ¿¡U-,. r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idB = 44dBm Typ. High Gain: G ^ b = 10.5dB (Typ.) High PAE: r iadd = 36% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 3.7 ~ 4.2GHz

Contextual Info: FLM10I1-8C F| .g p -,. Internally Matched Power GaAs FETs r UJ11 j U FEATURES • High Output Power: P ^ b = 38.5dBm Typ. • High Gain: G ^ b = 5.0dB (Typ.) • High PAE: r iadd = 22% (Typ.) • Broad Band: 10.7 ~ 11.7GHz • Impedance Matched Zin/Zout = 50Q

Contextual Info: F in rrç il FLM1213-4C r UJ11 DU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 35.5dBm Typ. High Gain: = 5.0dB (Typ.) High PAE: riadd = 22% (Typ.) Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Q

Contextual Info: F, . FLM5964-18DA r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 42.5dBm Typ. High Gain: G ^ b = 8.5dB (Typ.) High PAE: r!add = 31% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 5.9 ~ 6.4GHz

5964-6D

Contextual Info: F, . FLM5964-6D r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 38.0dBm Typ. High Gain: G ^ b = 10.0ÒB (Typ.) High PAE: r!add = 36% (Typ.) Low IM3 = -45dBc@Po = 27dBm Broad Band: 5.9 ~ 6.4GHz

J221

Abstract: FMC2122LN-03
Contextual Info: F | . S Mu. K-Band Power GaAs Modules F M C 2 1 2 2 L N - 3 j U . . r UJ11j U FEATU RES • • • • • • • High Output Power: P1CjB • 12dBm Typ. High Gain: G-j^ b = 12dB(Typ.) Low In/Out VSWR Low Noise: NF - 3.0dB (Typ.) Broad Band: 21.2 ~ 22.4GHz

FLM3742-12D

Abstract: FLM3742-12DA
Contextual Info: F,?T<.,. FLM3742-12DA 9 r UJ11jU Internally Matched Power GaAs FETs FEATURES • High Output Power: P ^ b = 41 dBm Typ. • • • • • • High Gain: G-|dB = 11 -5clB (Typ) High PAE: riadd = 37% (Typ.) Low IM3 = -45dBc@Po =30dBm Broad Band: 3.7 ~ 4.2GHz

fujitsu l-band power fets

Abstract: fujitsu gaas fet L-band
Contextual Info: p. .<¡2 .,. FLL31OIQ-3 r UJ11 bU L-Band Medium & High Power GaAs FETs FEATURES • • • • • Push-Pull Configuration High Power Output: 30W Excellent Linearity Suitable for class A and class AB operation. High PAE: 40%. DESCRIPTION The FLL31 OIQ-3 is a 30 Watt GaAs FET that employs a push-pull design which

GaAs FETs

Contextual Info: FLM6472-8D F| «e . r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 39dBm Typ. High Gain: G -j^B = 7.0dB (Typ.) High PAE: r iadd = 29% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 6.4 ~ 7.2GHz

Contextual Info: P, ,f?TQI, FMC141501-01 r UJ11jU Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P-i ^ b = 31dBm Typ. High Gain: G-ih r = 18.0dB(Typ.) Low In/Out VSWR Broad Band: 14.4 ~ 15.3GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package (12 X 15 X 3.5mm)

Contextual Info: F,¿¡U,. FLM5964-8C r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39.0dBm Typ. High Gain: G ^ b = 8.0dB (Typ.) High PAE: riadd = 30% (Typ.) Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q

Contextual Info: FLM5964-25DA r UJ11bU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 44dBm Typ. High Gain: G ^ b = 8.5dB (Typ.) High PAE: r iadd = 33% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q

Contextual Info: F| FLM7785-18DA . r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 42.5dBm Typ. High Gain: G ^ b = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 7.7 ~ 8.5GHz

Contextual Info: FLM6472-8D Internally Matched Power GaAs FETs RI lîrrQi r UJ11jU FEATURES • • • • • • • High Output Power: P ^ b = 39dBm (Typ. High Gain: = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q

Contextual Info: F| .ÇjU-, FMC2122C6-03 r UJ11ÒU Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P-i ^ b = 18dBm Typ. High Gain: G-ih r = 13dB(Typ.) Low In/Out VSWR Broad Band: 21.2 ~ 22.4GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package (12 X 15 X 3.5mm)

FLM7177-18DA

Abstract: U/25/20/TN26/15/850/FLM6472-18DA
Contextual Info: FLM7177-18DA Internally Matched Power GaAs FETs r UJ11j U FEATURES • • • • • • • High Output Power: P-idB = 42.5dBm Typ. High Gain: G ^ b = 7.5dB (Typ.) High PAE: riadd = 30% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q

FLM6472-12d

Abstract: FLM6472-12DA
Contextual Info: F| FLM6472-12DA . r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 41 dBm Typ. High Gain: G ^ b = 7.5dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q

Contextual Info: FLM6472-6D r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 38.0dBm Typ. High Gain: G ^ b = 8.0dB (Typ.) High PAE: r iadd = 34% (Typ.) Low IM 3 = -45dBc@Po = 27dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q

Contextual Info: f FLM6472-4D r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 36dBm Typ. High Gain: G ^ b = 8.0dB (Typ.) High PAE: r iadd = 30% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q

FLM1011-4C

Contextual Info: FLM1011-4C RI lîrrQi I Internally Matched Power GaAs FETs r UJ11jU FEATURES • • • • • • High Output Power: P ^ b = 35.5dBm Typ. High Gain: = 6.0dB (Typ.) High PAE: riadd = 24% (Typ.) Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Q

Contextual Info: FLM3742-4C f i rim i i Internally Matched Power GaAs FETs r UJ11 j U FEATURES • • • • • • High Output Power: P ^ b = 36dBm Typ. High Gain: = 12dB (Typ.) High PAE: riadd = 34% (Typ.) Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package

Contextual Info: FLM1011-4D RI lîrrQi I r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • High Output Power: P ^ b = 35.5dBm Typ. High Gain: = 6.0dB (Typ.) High PAE: riadd = 24% (Typ.) Low IM3 = -45dBc@Po = 25dBm • Broad Band: 10.7 ~ 11.7GHz • Impedance Matched Zin/Zout = 50Q

Contextual Info: Filmali FLM3742-8C r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P1dB = 39dBm Typ. High Gain: G1dB = 11dB (Typ.) High PAE: riadd = 33% (Typ.) Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package

Contextual Info: FLM3742-8E m frT C II r UJ11bU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 11 dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q