UJ 8A Search Results

GT300AL-20

Abstract: GT300AL GT300AL-16 GT300AL-24 GT300AL16 GT300AL20
Contextual Info: 100 - - = • UJ ~K > o£i/Íl 300 A : rh - j m ¡ S +* ¡i-: : ib í-ü ? 7 * 16, lili V ¡ T 3 0 0 A L -16 G T 3 0 0 A L -20 1 ¡TQR.M 300 1 7> 150 p ‘t 32: ¿ & * ó á . f lt iíW .í : * v ^ — 125°C, 2500 : 6 0 H z . 2 6 X 103 rj¡ Aj /= 2 1000

H-17

Abstract: H-18 H-19 H-22 Scans-0011307 sil 5102
Contextual Info: in Df- c O It O -.j -1 >» R¥ -y >* V V II v; 4-J V IV *5 tí“* 30 i * m ° m ^ 0 MI o >s ro x¡° V- A 1 V UJ V * si 91 3 *s si? <r- m m 3 TI ¡> $ c O ám n 3J 5íi¡¡ < Si F# r*«f o m O o £- & -H S rr H> m SU » AF >j pp rv m5 »+ m æ it $ 3 c$

FCHS08A12

Contextual Info: sbd Cathode common 8A 120V T¡n150V FCHS08A12 Fully Molded similar to TO-220AB tuts Nihon Inter Electronics Corporation Specification •>3 Construction fflìÉ Application h y T ÿ ' i Jr— K Schottky Barrier Kode High Frequency Rectification MAXIMUM RATINGS Ta=25°C Unless otherwise specified

U0103

Contextual Info: IE-rXN ZEO>3IO-N3 • • 0 i-£ £Z 6S-0S S073B 3 1 Idd3 d _ *QN *QHQ SSBNdVH 3 d A l « 0 1 ^6£l 01 S66I-t^6£l 3331 _ 31111 — 3S m H31SAS 0T3 WO ATNO 3SIA3M » o v n a ! aoioo o-At-ein1 OAd l»y:? !/8a>aavaN visO TSC 03dA i * 00 1

14N7

Abstract: 6sn7gt Sylvania 6SN7GT 6sn7gt tube 6Sn7-GT 14n7 tube 6SN7
Contextual Info: Sylvania Type 7N7 MEDIUM-MU DUOTRIODE GT EQUIVALENT 6SN7GT S' TT If 8A C - L -0 PHYSICAL SPECIFICATIONS B a s e .L o c k - I n 8 P in

ETR10

Abstract: 8AP4 PICTURE TUBE
Contextual Info: T E L E V IS IO N P IC T U R E TUBE DESCRIPTION The 8AP4-A is a magnetic-focus and -deflection, direct-view picture tube for television applications, It provides a 5J4- by 7-inch picture. Features of this tube are a metal-cone envelope, an electron gun designed to be used with an external ion-trap

Contextual Info: sMM EDP NO. DIMENSIONS IN METRIC DO NOT SCALE DRAWING ENG. NO S D - 5 3 0 5 2 - * * 10 •- llw mii|i mt cu LTI i O vr IN t- * ^ 4 I Hi \ & i 3S SB aiD z 0^ i-vji H '■ s. cdV i M | 1 5 .8 <m 3 .7 OCJl *h- 0.8 2 .5 Z T) CD H !* f f l 5 jC it T rti g

Contextual Info: 4302271 D045b7b fifl4 H H A S ££ H A R R IS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL130 D, R, H) 2N7272D, 2N7272R 2N7272H Radiation Hardened N-Channel Power MOSFETs December 1992 Features • 8A. 100V, RDS(on) • 0.180«

Contextual Info: EDP NO. DIMENSIONS IN METRIC DO NOT SCALE DRAWING 39-27-6*3 •- IQ f# ll|l ^ Q3t M 8 v; f Hi 3 Pc v4 *h|* 5jC Lml ttT nul r+ig S* r 5 vj I _vj „ *S v _,C s5 ai sW an11 m3 zo sa zdM i# S5 ^3 UKe O ro ro UJUJUJ -sj i\ U1-J© ro i\)ro ui -0© l \)Ul ro cn

Contextual Info: MITSUBISHI Neh POWER MOSFET FY8AAJ-03A HIGH-SPEED SWITCHING USE FY8AAJ-03A • 4V DRIVE • V d s s . • rDS ON (MAX) . . 30 V .23m£2 .8A • Id . APPLICATION M otor control, Lamp control, Solenoid control

MAX-7Q

Abstract: rh1s VMIVME-PS750 NBR3045PT VMIVME MAX-353-0512 Fluke 77 C56S PS150 54A18
Contextual Info: VMIVME-PS150 THROUGH VMIVME-PS750 SWING OUT POWER SUPPLIES INSTRUCTION MANUAL D O C UM EN T NO. 500-000023-000 C Revised Novem ber 9, 1994 VME M ICRO SYSTEM S IN TER N ATIO NAL CO RPORATIO N 12090 SOUTH M EM O R IAL PARKWAY H U N TS V ILLE , A L 35803-3308

Burr-Brown Application Note AN-165

Abstract: LU1PA Burr-Brown IC appendix d REF200AP vhz 454 6pin vhz current mirror cascode
Contextual Info: For Immediate Assistance, Contact ïour Local Salesperson B U W R -B R O W W REF200 AVAILABLE IN DIE DUAL CURRENT SOURCE/CURRENT SINK FEATURES APPLICATIONS • COMPLETELY FLOATING: No Power Supply or Ground Connections • HIGH ACCURACY: 100|iA ±0.5% • LOW TEMPERATURE COEFFICIENT:

apt1004ran

Abstract: 1004RAN 1004R2AN 10ILU 1004R2 APT904R2AN APT1004R2AN APT904RAN APT 1004RAN
Contextual Info: ADVANCFD P Oü l F R TECHNOLOGY od MT E X o \ D WÊ O O OO S DM K 35D M AVP A d va n c ed P o w er - p 3°i \3 Technology O S P n W P R m a c ix/TM r U W c n M O S IV APT1004RAN APT904RAN APT1004R2AN APT904R2AN 1000V 900V 1000V 900V 3.9A 3.9A 3.5A 3.5A 4.00 £2

Contextual Info: SGH15N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control,

Contextual Info: 7 C12CÌ2 3 7 002=1305 0 • ^ 3 3 ' 3 I SGS-THOMSON £ t7 stLtKSir^ODÏDDCgS' S 6 2N6053 2N6055 S-TH0MS0N 30E D COMPLEMENTARY POWER DARLINGTON DESCRIPTIO N The 2N6053 is a silicon epitaxial base PNP transis­ tor in monolithic Darlington configuration and are

Contextual Info: SGW13N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is

Contextual Info: SGP5N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control,

SGP13N60UFDTU

Contextual Info: SGP13N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is

APT28GA60K

Abstract: MIC4452
Contextual Info: APT28GA60K 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

Contextual Info: ADVANCED ELECTRONIC PKG HbE D • 02547^3 00002Ö3 S ■ AEPSRZ32 32 LINE SCAN REGISTER August 1, 1990 » 3 2 bit high speed parallel and serial scan register. » High density .070 center spaced ZIP leads for maximum I/O in minimum area. » Space saving vertical

SDA-2083

Abstract: c2314 IR2248 LA 7814 T2333 2561A c2271 ir434 d2251 8c548
Contextual Info: * ]' —o o I" o T 81 4 8 C 32 7/40 Ì o i—» .Q cp ! D811 C SAT42 ¡L ^ . ^ s s s s ss s s s s f^ I ~ -I.! » SSSSS . SSSSSS’ -i W i W E # ^ SSjfcSSSSSSSSSSSSSS VSSSSSSSMrVJ— 1 J 8AT4-2 \ ; ffi? 4 |± Î|£ I L S R517Ö U S *6 5170 *882

diode bridge 16A

Contextual Info: APT28GA60BD15 APT28GA60SD15 600V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low

Contextual Info: FSB50825US Smart Power Module SPM Features General Description • 250V 8A 3-phase FRFET inverter including high voltage integrated circuit (HVIC) • 3 divided negative dc-link terminals for inverter current sensing applications FSB50825US is a tiny smart power module (SPM®) based on

APT28GA60BD15

Abstract: APT6017LLL MIC4452
Contextual Info: APT28GA60BD15 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low