UPC2798GR Search Results

NEC C2798G

Contextual Info: 250 MHz QAM IF DOWNCONVERTER UPC2798GR FEATURES DESCRIPTION • RF/LO FREQUENCY RANGE: 30-250 MHz The UPC2798GR is a Silicon MMIC Downconverter manufactured with the NESAT III silicon bipolar process. This product consists of an input AGC amplifier, mixer, local oscillator, and

Contextual Info: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT uPC2799GR UP CONVERTOR FOR CABLE MODEM DESCRIPTION The ^¡PC2799GR is Silicon monolithic 1C designed for use as up-converter for cable modem. This 1C consists of local oscillator, AGC amplifier, mixer and so on. ^¡PC1686GV and ,uPC2798GR are also available as for kit-use with this IC.

agc circuit use op amp

Contextual Info: PRELIMINARY DATASHEET 250 MHz QAM IF DOWNCONVERTER FEATURES UPC2798GR DESCRIPTION • RF/LO FREQUENCY RANGE: 30-250 MHz • ON CHIP VCO • LOW DISTORTION AGC AMPLIFIER: The U P C 2 7 9 8 G R is a S ilicon M M 1C D o w n c o n v e rte r m a n u fa c­ tu re d w ith th e N E S A T III silicon b ip o la r pro cess. T his p ro d ­

NEC C2798G

Abstract: c2798g UPC2798GR ISV209 UPC2798GR-E1
Contextual Info: 250 MHz QAM IF DOWNCONVERTER UPC2798GR FEATURES DESCRIPTION • RF/LO FREQUENCY RANGE: 30-250 MHz The UPC2798GR is a Silicon MMIC Downconverter manufactured with the NESAT III silicon bipolar process. This product consists of an input AGC amplifier, mixer, local oscillator, and

UPC2798GR

Contextual Info: Configuration Drawings Frequency Downconverters UPC1686GV/ 2721GV/2722GV UPC2756T ose ose ose Vcc Coupling (Feedback) (Bypass) (F o u t2 GND R F in -2 UPC2757T/58T UPC8112T R F in - i (Bypass) UPC2768GR UPC2782GR UPC2798GR Configuration Drawings IQ Modulators

Contextual Info: 250 MHz QAM IF DOWNCONVERTER UPC2798GR FEATURES_ DESCRIPTION_ • RF/LO FREQUENCY RANGE: 30-250 MHz • ON CHIP VCO • LOW DISTORTION AGC AMPLIFIER: -9 dBm IIP3@ MIN Gain • ON CHIP VIDEO AMP: 3.0 Vp-p Vcc = 5 V

Contextual Info: DATA S H EE T NEC BIPOLAR ANALOG INTEGRATED CIRCUIT uPC2798GR IF DOWN CONVERTOR 1C FOR DIGITAL CATV DESCRIPTION The ¿iPC2798GR is a Silicon monolithic 1C designed for use as QAM IF down convertor for digital CATV. This 1C consists of AGC amplifier, mixer, oscillator, and video amplifier.

Contextual Info: 250 MHz QAM IF DOWNCONVERTER FEATURES UPC2798GR DESCRIPTION • RF/LO FREQUENCY RANGE: 30-250 MHz • ON CHIP VCO • LOW DISTORTION AGC AMPLIFIER: • ON CHIP VIDEO AMP: 3.0 Vp-p Vcc = 5 V • SMALL 20 PIN SSOP PACKAGE • AVAILABLE ON TAPE AND REEL The U P C 2 7 9 8 G R is a S ilic o n M M IC D o w n c o n v e rte r m a n u fa c­

NEC C2798G

Contextual Info: 250 MHz QAM IF DOWNCONVERTER UPC2798GR FEATURES DESCRIPTION • RF/LO FREQUENCY RANGE: 30-250 MHz The UPC2798GR is a Silicon MMIC Downconverter manufactured with the NESAT III silicon bipolar process. This product consists of an input AGC amplifier, mixer, local oscillator, and

NEC C2798G

Abstract: C2798G ISV209 UPC2798GR UPC2798GR-E1-A UPC2798GR-E1
Contextual Info: 250 MHz QAM IF DOWNCONVERTER UPC2798GR FEATURES DESCRIPTION • RF/LO FREQUENCY RANGE: 30-250 MHz NEC's UPC2798GR is a Silicon MMIC Downconverter manufactured with the NESAT III silicon bipolar process. This product consists of an input AGC amplifier, mixer, local oscillator, and video amplifier. It is housed in a small 20 pin SSOP

UPC2798GR

Contextual Info: 250 MHz QAM IF DOWNCONVERTER UPC2798GR FEATURES_ DESCRIPTION_ • RF/LO FREQUENCY RANGE: 3 0 -2 5 0 MHz • ON CHIP VCO • LOW DISTORTION AGC AMPLIFIER: -9 dBm IIP3 @ MIN Gain • ON CHIP VIDEO AMP: 3.0 Vp-p Vcc = 5 V

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

ne3511s02 s2p

Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
Contextual Info: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan

nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Contextual Info: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,

26 sot-363 rf power amplifier

Abstract: UPC3232TB upc8211 UPC3223TB QFN2020 uPC2710 s06 A UPC1678GV UPC2745TB UPC2747TB
Contextual Info: NEC Silicon RFIC Amplifiers – Low Power, Wideband & SiGe/SiGeC Low Power Amplifiers Part Number Typical ELECTRICAL CHARACTERISTICS1 TA = 25°C Frequency Range VCC ICC NF Gain RLIN RLOUT P1dB ISOL @ 3dB (V) (mA) (dB) (dB) (dB) (dB) (dBm) (dB) down Package

mc10087f1

Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
Contextual Info: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.

t06 sot 23

Abstract: UPC2710 upc2713
Contextual Info: RF 1C Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL CHARACTERISTICS’ f t * • 25“C Typical Fraquancy Hangs Vcc 93H B V) Pan Numbar MIN 9m NF (dB) Icc <mA) TYP MAX Gain RLin RLout PldB ISOL (dB) (dB) (dB) (dBm) (dB) TYP TYP TYP TYP TYP MIN TYP MAX Pfeg.

7805 V Reg

Abstract: DC-10 UPC1686GV UPC2798GR UPC2799GR UPC3211GR UPC3211GR-E1 7805 Packaged TO-3
Contextual Info: PRELIMINARY DATA SHEET AGC AMPLIFIER UPC3211GR INTERNAL BLOCK DIAGRAM FEATURES • WIDE GAIN CONTROL RANGE: 55 dB TYP NC 1 • LOW DISTORTION: IM3 = 57 dBc (TYP) at POUT = -10 dBm VAGC 2 Cont. 20 NC 19 AGCIN1 IM2 = 44 dBc (TYP) at POUT = -10 dBm • SUPPLY VOLTAGE: 9 V

SMD M05 sot

Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
Contextual Info: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial

c2798g

Abstract: C2766G c2768g C8116G c2782 c8110g c2782g UPC2798GR UPC2734GR UPC2753GR
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. S20 20 11 N 1 10 7.00 MAX 6.4±0.2 4.4±0.1 1.0±0.1 1.5 ±0.1 +0.10 0.15- 0.05 1.8 MAX +0.10 0.22 - 0.05 0.5±0.2 0.65 PART NUMBER 0.575 MAX

transistor A 564

Abstract: transistor am s20 T06 transistor transistor t06 19 transistor t06
Contextual Info: Transistor Arrays gtECTRICAL CHARACTERISTICS <7> * 2SX! • fr Mm SLt * ; UPA101G1 UPA1Q2G2 UPA103G3 hFE Ces CCS: mA) CcB tpF) (pF) (pF) MAX MAX TYP TYP TYP TYP 1.0 1.0 1.0 1.0 100 - 1.0 1.0 100 100 0.9 1.4 1.4 1.4 •:1.4 iCBO (GHz) TYP MAX 9 40 40 40