UPC8112T Search Results

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT uPC8112T SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE DESCRIPTION The ^¡PC8112T is a silicon monolithic integrated circuit designed as cellular/cordless telephone receiver stage. 1st frequency down-converter for

fl capacitor 1000

Abstract: t06 93
Contextual Info: 3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER UPC8112T INTERNAL BLOCK DIAGRAM FEATURES BROADBAND OPERATION: RF Input: 800 - 2000 MHz IF Output: 100 -3 0 0 MHz INPUT IP3: -7 dBm LOW VOLTAGE OPERATION: 2 .7 -3 3 V LOW CURRENT CONSUMPTION: 8.5 mA POWER SAVE FUNCTION

2 LOIF

Abstract: UPC8112T UPC8112T-E3
Contextual Info: 3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER UPC8112T INTERNAL BLOCK DIAGRAM FEATURES • BROADBAND OPERATION: RF Input: 800 - 2000 MHz IF Output: 100 - 300 MHz IF Output RF Input • INPUT IP3: -7 dBm • LOW VOLTAGE OPERATION: 2.7~3.3 V • LOW CURRENT CONSUMPTION: 8.5 mA

sot26 sot363 transistor

Abstract: transistor to6 UPG152TA SSOP20 package 2746 transistor UPG137 UPC8119 NE68730 NE68818 UPC2745
Contextual Info: 900MHz NEW! NE68730 Bipolar Transistor • Low noise figure: 1.2 dB typ at 900MHz • Optimum Noise Match: Close to 50 Ohms • Miniature package: 1.25 x 2.0 mm UPC2745/46TB Buffer Amps UPC8112T Downconverter • 3V operation • 13 dB typ Conversion Gain

UPG137

Abstract: 2746 transistor NE34018 NE68818 UPC2745 UPC2771T UPC8112T UPG152TA sot26 sot363 transistor
Contextual Info: PCS NEW! NEW! NE34018 HEMT • Low cost plastic package • + 30 dBm Output IP3 • -18 dB Input Return Loss • 0.8 dB Noise Figure • 16 dB Associated Gain UPC8112T Downconverter UPC2745 /46TB Buffer Amps • 3 V operation • 13 dB typ Conversion Gain

UPC2798GR

Contextual Info: Configuration Drawings Frequency Downconverters UPC1686GV/ 2721GV/2722GV UPC2756T ose ose ose Vcc Coupling (Feedback) (Bypass) (F o u t2 GND R F in -2 UPC2757T/58T UPC8112T R F in - i (Bypass) UPC2768GR UPC2782GR UPC2798GR Configuration Drawings IQ Modulators

UPC8112T

Abstract: UPC8112TB UPC8112TB-E3-A
Contextual Info: 3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER FEATURES UPC8112TB INTERNAL BLOCK DIAGRAM • HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold or SOT-363 Package IF Output RF Input • BROADBAND OPERATION: RF = 0.8 to 2.0 GHz IF = 100 to 300 MHz • INPUT IP3: -7 dBm

Contextual Info: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT uPC8112TB SILICON MMIC 1st FREQUENCY DOWNCONVERTER FOR CELLULAR/CORDLESS TELEPHONE DESCRIPTION The ¿¿PC8112TB is a silicon monolithic integrated circuit designed as 1st frequency downconverter tor

UPC8112T

Abstract: UPC8112T-E3
Contextual Info: 3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER UPC8112T INTERNAL BLOCK DIAGRAM FEATURES • BROADBAND OPERATION: RF Input: 800 - 2000 MHz IF Output: 100 - 300 MHz IF Output RF Input • INPUT IP3: -7 dBm • LOW VOLTAGE OPERATION: 2.7~3.3 V • LOW CURRENT CONSUMPTION: 8.5 mA

Contextual Info: 3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER FEATURES upC8112T INTERNAL BLOCK DIAGRAM BROADBAND OPERATION: RF Input: 800 - 2000 MHz IF Output: 100- 300 MHz INPUT IP3: -7 dBm LOW VOLTAGE OPERATION: 2.7~3.3 V LOW CURRENT CONSUMPTION: 8.5 mA POWER SAVE FUNCTION

mobile phone basic block diagram

Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

CAPACITOR

Contextual Info: PRELIM IN A R Y DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT u P C 8 1 1 2 T B SILICON MMIC 1st FREQUENCY DOWNCONVERTER FOR CELLULAR/CORDLESS TELEPHONE DESCRIPTION The ^¡PC8112TB is a silicon monolithic integrated circuit designed as 1st frequency downconverter for

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

J243 336

Abstract: IM361 PC2758 pc2757tb 58rf j374 PC2758TB J148 314 j122 nec J141
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

SMD M05 sot23

Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
Contextual Info: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly

ne3511s02 s2p

Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
Contextual Info: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan

nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Contextual Info: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,

PC2758TB

Abstract: PC8112TB-E3-A
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8112TB SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE DESCRIPTION The PC8112TB is a silicon monolithic integrated circuit designed as 1st frequency down-converter for cellular/cordless telephone receiver stage. This IC consists of mixer and local amplifier. The PC8112TB features

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17

j337

Abstract: power tr unit j122 5 pin J122 transistor transistor j122 PDC800M PC2758TB
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8112TB SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE DESCRIPTION The μPC8112TB is a silicon monolithic integrated circuit designed as 1st frequency down-converter for cellular/cordless telephone receiver stage. This IC consists of mixer and local amplifier. The μPC8112TB features

ic isl 887

Abstract: 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03
Contextual Info: RF & マイクロ波デバイス システムブロック www.renesas.com 2010.04 目 次 1. はじめに •··········································································································································· 3

1509-30

Abstract: UPC8103T UPC8108T
Contextual Info: Frequency Downconverters _ . J U B m e « • CHAU ftMt [ ^> n UPC1685G UPC1606G UPC1686GV UPC1687G UPC2721GR new MHz (MHz) TYP TYP 55-890 55-890 55-890 55-890 900-2000 10-100 10-80 10-80 10-80 50-600 Vcc (V) Icc (mA) Conversion Noise Gain PSAT Figure (dB)