PDC800M Search Results

GRM36

Abstract: HK1005 HK1608 NJG1720PB1 840MHZ
Contextual Info: NJG1720PB1 800MHz フロントエンド GaAs MMIC •概要 本製品は PDC800MHz 用 F/E です。Dual LNA ＋Single Mixer で構成されLNA は 1Bit コントロールにて LNA の 切り替えが可能です。ミキサーはローカルアンプを内蔵し

ACP-12

Abstract: rx3e NJG1540JA3 BCC32 RX-3E ant2 0.3 23 isl27 ISL33 ISL23 ISL62
Contextual Info: NJG1540JA3 5x10 デュアルバンドアンテナスイッチ GaAs MMIC •概要 本製品は PDC800MHz 帯/1.5GHz 帯デュアルバンドの非対 称パケット通信対応携帯電話端末での使用を主目的としたア ンテナ切替えスイッチＩＣです。7 ビット並列入力制御信号に

DD2010

Abstract: GRM39 HK1608 NJG1307R 5acp
Contextual Info: NJG1307R 利得可変ドライバーアンプGaAs MMIC •概要 NJG1307R はディジタル携帯電話端末での使用を 主目的とした利得可変ドライバーアンプ IC です。 PDC800MHz 帯PDC1.5GHz 帯、PHS1.9GHz 帯 のアプリケーションに最適です。

ant2 0.3 23

Abstract: ISL11 NJG1531JA2 BCC24 658MHz rx3e
Contextual Info: 暫定資料 NJG1531JA2 02/08/2001 Ver.1 開発中 5x9 デュアルバンドアンテナスイッチ GaAs MMIC •概要 本製品は PDC800MHz 帯/1.5GHz 帯デュアルバンドの携帯 電話端末での使用を主目的としたアンテナ切替えスイッチ

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

GRM39

Abstract: PDC800M PC8130TA
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC8130TA, µPC8131TA –15 dBm INPUT, VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE DESCRIPTION The µPC8130TA and µPC8131TA are silicon monolithic integrated circuits designed as variable gain amplifier.

N25U

Abstract: rstep UPD3160GS pm225
Contextual Info: DATA SHEET_ NEC CMOS INTEGRATED CIRCUIT //P D 3 1 6 0 G S PLL FREQUENCY SYNTHESIZER LSI FOR 1st LOCAL CONTROL OF DIGITAL CELLULAR DESCRIPTION //PD3160G S is a PLL frequency synthesizer LSI for 1st local control of digital cellular telephones. //PD3160G S is

Contextual Info: PRELIMINARY DATA SHEET_ IV IF f * / BIPOLAR ANALOG INTEGRATED CIRCUITS / UPC2757TB, UPC2758TB SILICON MMIC 1st FREQUENCY DOWNCONVERTER FOR CELLULAR/CORDLESS TELEPHONE DESCRIPTION The ^¡PC2757TB and ^¡PC2758TB are silicon monolithic integrated circuit designed as

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS u P C 8 1 1 9 T , u P C 8 1 2 0 T VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE DESCRIPTION The ^¡PC8119T and ^¡PC8120T are silicon monolithic integrated circuits designed as variable gain amplifier. Due to

Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT u P C 8 1 5 8 K RF UP-CONVERTER WITH AGC FUNCTION + IF QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS DESCRIPTION The ^¡PC8158K is a silicon microwave monolithic integrated circuit designed as quadrature modulator for digital

24PIN

Abstract: CXG1135ER Ta-3585
Contextual Info: CXG1135ER PDCフルパケット用集積コントロールロジック内蔵 高パワー6x4アンテナスイッチMMIC 概 要 CXG1135ERは，PDC800MHz／1.5GHzデュアルホン 用 高パワーアンテナスイッチMMICです。本ICは， フルパケットモード搭載の4つのアンテナに2Tx／

PC2747TB

Abstract: PDC800M
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2747TB,µPC2748TB 3 V, SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC2747TB, µPC2748TB are silicon monolithic integrated circuits designed as amplifier for mobile communications. These ICs are packaged in super minimold package which is smaller than conventional minimold.

nec k 813

Abstract: PDC800M
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

B0947

Abstract: b027 b0914 1225M B0902 LFA30-15B LFJ30-03 marking code ax LFJ30
Contextual Info: LC FILTER-BANDPASS CHIP MONOLITHIC LFA, LFL 8c LFJ Series FEATURES • ■ ■ ■ ■ ■ ■ Small size: see dimensions Metal shielding on inner chip No adjustment required Tape and reel packaging Reflow solderable Frequency request flexibility Frequency range from 600MHz to 2.5GHz

PC2710TB

Abstract: PC2709T pc2771 PC2776TB C1E mmic PC2708TB PC2709TB
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

VCIS892

Abstract: 925-960 power amplifier
Contextual Info: FUNCTIONAL MODULES FU N C TIO N AL M OD U LES C h M tta H M Appearance Applicano« The specifications listed are typical and the items are shown to represer it the breadth of Taiyo Yuden s design and production capabilities. For an engineering consultation on a custom solution

Contextual Info: DATA SHEET_ NEC CMOS INTEGRATED CIRCUIT //PD3160GS PLL FREQUENCY SYNTHESIZER LSI FOR 1st LOCAL CONTROL OF DIGITAL CELLULAR DESCRIPTION /¿PD3160GS is a PLL frequency synthesizer LSI for 1st local control of digital cellular telephones. /¿PD3160GS is

J162

Abstract: j337 J122 transistor transistor j122 PDC800M PPC2757T PPC8112TB
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PDC800M

Abstract: upc8112tb
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

PC8109

Abstract: ic tb 810 datasheet PC8163 PC8106 u709 1RF 630 S 0680 RFDC
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

PC8130TA

Abstract: Mini 50 Pin IDE
Contextual Info: PRELIMINARY DATA SHEET_ IV IF f " / BIPOLAR ANALOG INTEGRATED CIRCUIT / /¿PC 8 1 3 0 T A , /iP C 8 1 3 1 T A -1 5 dBm INPUT, VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE DESCRIPTION The ¿¿PC8130TA and ¿¿PC8131TA are silicon monolithic integrated circuits designed as variable gain amplifier.

SMD 4E

Abstract: PDC800M SC33 fc87 murata SAW
Contextual Info: Feature Specification -20 … +75 deg.C 1. Dual type 2. Low Insertion Loss (2.7dB max.) 3. High Attenuation (at image point ; 46/50dB min.) 4. Small SMD package (SC33 package) Test Circuit 2 3 8 7 S.S.G 6 L 4 5 RF Voltmeter V1 Ri 3.0±0.2 3.0±0.2 Dot Marking

marking C1s

Abstract: PDC800M NEC C1R 6-PIN 907 09 03 000 6181
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2747TB, µPC2748TB 3 V, SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUMICATIONS DESCRIPTION The µPC2747TB, µPC2748TB are silicon monolithic integrated circuits designed as amplifier for mobile communications. These ICs are packaged in super minimold package which is smaller than conventional minimold.

J122 transistor

Abstract: J162 j337 power tr unit j122 5 pin J122 transistor j122 AN 7468 PDC800M PPC2757T PPC8112TB
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8112TB SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE DESCRIPTION The µPC8112TB is a silicon monolithic integrated circuit designed as 1st frequency down-converter for cellular/cordless telephone receiver stage. This IC consists of mixer and local amplifier. The µPC8112TB features