U C TRANSISTOR Search Results

2SC4112

Abstract: 2018a 2SA1581
Contextual Info: 2SC4112 N P N /W Epitaxial Plana» S ilico n Transistors jo’ ba S w itc h in g A pp lication s 2SA1581 w ith Bias Resistance lEiaa A pplications . Switching c i r c u i t , in v e rte r c i r c u i t , in te rfa c e c i r c u i t , d riv e r c ir c u it

FZT951

Abstract: FZT953 NS BR 1010
Contextual Info: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS_ FZT951 FZT953 PROVISIONAL DATA FEATURES * 5 A C O N T IN U O U S C O LL EC T O R C U R R E N T * U P T O 15A P E A K C O LL E C T O R C U R R E N T * V E R Y L O W S A T U R A T IO N V O L T A G E S

npn transistors,pnp transistors

Abstract: J.BC211 BC211 transistor amplifier VHF/UHF 2N918 J 2N918
Contextual Info: A C T IV E C O M P O N E N T S FOR H Y B R ID C IR C U IT S C O M P O S A N T S A C T IF S P O U R C IR C U IT S H Y B R ID E S Silicon NPN transistors V H F-U H F amplification and oscillation chip Transistors N P N silicium, amplification et oscillation V H F -U H F (pastille)

gt73

Abstract: LS T73
Contextual Info: Super323 SOT323 PNP SILICON POWER SWITCHING TRANSISTOR ZUMT720 ISSUE 1 - SEPTEMBER 1998_ FEATU RES * 500mW POWER DISSIPATION * * * * 1A Peak P u lse C u rren t E x c e lle n t H FE C h a ra c te ristic s U p T o 1A (p u lsed )

2SB1450

Contextual Info: SAfiYO Power Transistor S u r f a c e M o u n t P a c k a g e S M P S u r f a c e M o u n t Po w er In recent y e a r s s u r f a c e mou nt s e m i c o n d u c t o r products have found wide application from small-signal co nsumer equipment to h i g h - p o w e r industr ia l equipment.

Contextual Info: KSC1730 NPN EPITAXIAL SILICON TRANSISTOR TV VHF, UHF TUNER OSCILLATOR • H igh C u rre n t G a in B a n d w id th P ro d u c t fj= 1 1 0 0 0 M H z • O u tp u t C a p a c ita n c e C ob=1 -5pF M ax ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol

kta1013

Abstract: TIC 160 VCEO160V
Contextual Info: SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS KTC 2383 U nit in m m ) . • Color T V jV ERT. D e f le c tio n O utput. ■ Color T V C l a s s B S o u n d O utput. ( FEATURES ) • High V o lta g e ! V ceo^ ^ O V • L a r g e C o n tin u o u s C o l l e c t o r C u r r e n t C a pability.

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 1147 A ISSUE 1 - JANUARY 1997_*" FEATURES * V c e o = -12V * 4 A m p C o n tin u o u s C u rre n t * 2 0 A m p p u ls e C u rre n t * L o w S a tu ra tio n V o lta g e

CERAMIC FLATPACK

Abstract: BA 4915 DIODE S4 53 ceramic DIL 14 pin transistor mj 4035 BAT22 BAT22J BAT24H BAT26 BAT28H
Contextual Info: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Pin Configuration n-p-n C p-n-p B C IU J ’m□ ‘Ù C E m u u E u B u: C CL □ B O T ba 1U E □ _□ _ □ O U E B B Û T m□ □ LJ D 14 Lead DIL 4915 N-channel o2 s2 f i f i

Contextual Info: Super323 SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT619 IS S U E 1 - S E P T E M B E R FEATU RES 500mW POWER DISSIPATION * * * * lc CO N T 1A 2 A Peak P u lse C u rren t E x c e lle n t H FE C h a ra c te ristic s U p T o 2 A (p u lsed )

TLP331

Contextual Info: GaAs IRED & PHOTO-TRANSISTOR TLP331,332 TLP331 U nit in mm OFFICE M A C H IN E H O U S E H O LD USE E Q U IP M E N T P R O G R A M M A B L E C O NTROLLERS A C /D C -IN P U T M O D U L E T E L E C O M M U N IC A T IO N The TOSHIBA TLP331 and TLP332 consists of a gallium arsenide

mj3001

Contextual Info: MJ2501 MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u

2sc3203

Abstract: 2sa1271
Contextual Info: 2SA127I SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS APPLICATIONS • Low F r e q u e n c y P o w e r A m p l if i e r s (B -C lass P u sh -p u ll, P o = l W ) ■ General P u r p o s e S w i t c h i n g C i r c u i t s FEATURES • Excellent h FE v s .

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 - JANUARY 1997 FEATURES * V C E O = -*0 V * 3 A m p C o n tin u o u s C u rre n t * 5 A m p P ulse C u rr e n t * * Low Saturation voltage High Gain ABSOLUTE M AXIM UM RATINGS. PARAM ETER SYM BOL

L25-M

Abstract: l25m BUT 1 BUT12
Contextual Info: BUT12/12 A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS TO-220 ABSOLUTE MAXIMUM RATINGS Rating Symbol Characteristic C ollector-Base Voltage B U T12 850 VcES . B U T 12 A i C ollector Em itter Voltage : B U T 12 C ollector C urrent Pulse

T-10901

Abstract: M105 SD1527-08 SD1527-8 1090mhz 253c S88SC TACAN transistor 1030-1090MHz
Contextual Info: H / f llr f/C f « i n 11mI P ro g re s s P o w e re d b y T e c h no log y 140 Commerce Drive m u i u y u M i c i yville, v m c , PA i 18936-1013 i u j j u ivi»* Montgomery Tel: 215 631-9840 ä - r m b U n - r « l5 z 7 - 0 RF & MICROWAVE TRANSISTORS IFF/DME APPLICATIONS

Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - AUGUST 1995 Q FEATURES * S u ita b le fo r AF d riv e rs and o u tp u t stages * H igh c o lle c to r c u rre n t and L o w VCE sat C O M PLEM ENTARY TYPE BCP55 PARTM ARKING DETAILS - BCP52 B C P 5 2 - 10

KTA950

Abstract: ktc2120 C 2120 Y NPN transistor KTC 200
Contextual Info: SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE POT PROCESS KTC 2120 APPLICATIONS I Low F r e q u e n c y P o w e r A m p lifie rs ( B - C la s s P u s h - p u l l , P o = lW ) I General P u r p o s e S w itc h in g C i r c u its FEATURES »Excellent Ii f e

2N3800

Abstract: 2N3805 2N3726 2N3729 2N3804 2N3804A 2N2978 2n3423 2N3803 2N3812
Contextual Info: Discrete Devices Transistors Cont. Differential and Dual Amplifiers (C ony_ u r i a u i c i c A m bien t P q Type Polarity One Both Side Sides mW mW V c E (S a t) @ Ic / lß Hf e @ 'C VCB VCE Tracking Electrical Characteristics @ 25° C (One Side) M axim u m Ratings

BSW68

Abstract: 2N3055 mj2955 50004 2N3440 ST bdy90 BSV64 BSW68A
Contextual Info: MilitaryAerospace Division Military-Aerospace Division C EC C 5 0 0 0 0 qualified m etal case transistors A p p ro val no M /0 1 0 3 /C E C C /U K available on r e q u e s t w ith options for additional screening to e ith e r se q u e n c e A, B, C or D.

ve90

Abstract: CM 3258
Contextual Info: SOT223 NPN SILICON PLANAR HIGH CURRENT FZT849 HIGH PERFORMANCE TRANSISTOR IS S U E 3 - J A N U A R Y 1996 - FEAT U R ES * E x tre m e ly lo w e q u iv a le n t on -re sistan ce ; R c E(M,|36m i2 a t 5 A * 7 A m p c o n tin u o u s c o lle c to r cu rre n t (20 A m p peak)

UPA102G

Abstract: 8108T PC2768G 2757T PC2766 UPC2798GR
Contextual Info: Configuration Drawings Frequency Downconverters U P C 2731G S ose UPC1685G U PC1686G U PC1687G U PC 2721G R U PC2722G R Coupling ose (Feedback) ose (Bypass) (Bypass) U PC2734G R U PC2753G R U P C 2743G S /44G S E E E _n= E E r E E E E E U PC2768G R U P C 2756T

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3 - JUNE 94 FEATURES * 2 A m p s c o n tin u o u s c u rre n t * U p to 5 A m p s p eak c u rre n t * V e ry lo w s a tu ra tio n v o lta g e * E x c e lle n t g a in ch a ra c te ris tics up to 2 A m p s

Contextual Info: Super323 SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT618 ISSUE 1 - SEPTEMBER 1998_ F E A TU R E S * 500m W POWER DISSIPATION * lc C O N T I.2 5 A * 3 A P eak P u ls e C u rre n t * E x c e lle n t H FE C h a ra c te ris tic s U p to 3 A (p u ls e d )