TTL IC TESTER Search Results
TTL IC TESTER Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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D1U54T-M-2500-12-HB4C | Murata Manufacturing Co Ltd | 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR | |||
D1U74T-W-1600-12-HB4AC | Murata Manufacturing Co Ltd | AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs | |||
SCC433T-K03-004 | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor | |||
MRMS791B | Murata Manufacturing Co Ltd | Magnetic Sensor | |||
SCC433T-K03-05 | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor |
TTL IC TESTER Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: a WHITE /M IC R O E L E C T R O N IC S 128Kx48 3.3V SRAM MODULE W S128K48V-XG4W X ADVANCED* FEATURES • A c c e s s Tim es 1 5 , 1 7 , 2 0 , 25 n s ■ Pa ckaging 2 V Data Retention D e vice s A vailab le ■ TTL C om patible Inputs and Outputs Low Pow er Version |
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128Kx48 S128K48V-XG4W 128K48 | |
csi4Contextual Info: C3 WS512K32B-XXXE I/VHITE /M IC R O E L E C T R O N IC S 512 K x3 2 S R A M M 0 D U LE preliminary* FEATURES • Access Times of 15,17, 20, 25ns ■ TTL Compatible Inputs and Outputs ■ Low Power BiCMOS ■ 5 Volt Power Supply ■ Packaging ■ Built-in Decoupling Caps and Multiple Ground Pins for Low |
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WS512K32B-XXXE 512Kx32, csi4 | |
DB50 connector
Abstract: FB100 FB100A CD 4501 FB2000A IEEE488 RS-449 prbs noise generator OP210 IEEE-448
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FB100A RS-422 DB50 connector FB100 CD 4501 FB2000A IEEE488 RS-449 prbs noise generator OP210 IEEE-448 | |
Contextual Info: M O S E L V IT E L IC MS62256L 32K x 8 CMOS STATIC RAM Features Description • High-speed - 70/100 ns ■ Low Power dissipation: MS62256L - 385mW Max. Operating - 550fiW (Typ.) Power Down ■ Fully static operation ■ All inputs and outputs directly TTL compatible |
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MS62256L 385mW 550fiW MS62256L 144-bit 28-pin MS62256L-70PC MS62256L-70FC | |
MS62256L-70NCContextual Info: M O SEL V IT E L IC MS62256L 3 2K x 8 CMOS STATIC RAM Features Description • High-speed - 70/100 ns ■ Low Power dissipation: MS62256L - 385mW Max. Operating - 550|aW (Typ.) Power Down ■ Fully static operation ■ All inputs and outputs directly TTL compatible |
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MS62256L MS62256L 385mW 144-bit 28-pin MS62256L-70PC MS62256L-70FC MS62256L-70NC | |
DB50 connector
Abstract: DB50 FB100 IEEE-448 RJ45 modular jack FB100A mds wireless broadband specifications tv pattern generator FB2000A IEEE488
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FB100A RS-422 DB50 connector DB50 FB100 IEEE-448 RJ45 modular jack mds wireless broadband specifications tv pattern generator FB2000A IEEE488 | |
I01b-1
Abstract: 01b SMD
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S512K32-XXX 512Kx32 120ns 66-pin, 512Kx32, 1024Kx16 01HXX 02HXX 03HXX 04HXX I01b-1 01b SMD | |
Contextual Info: I |T E r j 1 I LM CLfA I HIGH COLLECTOR-EMITTER VOLTAGE TYPE LTV713F/LTV713FS/LTV713FM • FEATURES 1 Directly connectable to TTL 2 Current transfer ratio C T R : MIN. 50% at If = 5mA, V ce =5V 3. Low collector dark current (Ic eo : MAX. 1Cr7A at V c e - |
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LTV713F/LTV713FS/LTV713FM 000Vrms | |
S-8225
Abstract: MS62256CLL-10PC
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MS62256C 385mW 144-bit 500mV MS62256CLL-70PC MS62256CLL-70FC MS62256CLL-70NC MS62256CLL-10PC S-8225 | |
Contextual Info: M O SE L V IT E L IC PRELIMINARY V62C3181024 2.7 VOL T 1 2 8 K X 8 STA TIC RAM Features • Packages - 32-pin TSOP Standard ■ High-speed: 35, 0 ns ■ Ultra low DC operating current of 3mA (max.) - TTL Standby: 3 mA (Max.) - CMOS Standby: 50 nA (Max.) |
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V62C3181024 32-pin 576-bit V62C3181024 | |
Contextual Info: ca W S128K64V-XG4W X WHITE /M IC R O E L E C T R O N IC S 128Kx64 3.3V SRAM MODULE ADVANCED* FEATURES • A c c e s s T im es of 1 5 ,1 7 , 20, 25ns ■ 2 V Data R eten tion D e vices A v a ila b le Low P ow er V ersion ■ Packaging ■ TTL C o m p a tib le Inputs and O utputs |
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S128K64V-XG4W 128Kx64 128Kx64, 256Kx32, 2Kx16 128K64 | |
Contextual Info: PRELIMINARY SYNERGY TTL BICMOS STATIC RAM 6 4 K 1 6 K X 4-BIT S E M IC O N D U C T O R ' ' DESCRIPTION FEATURES • Address access time, tAA: 7/10/12ns max. ■ Chip select access time, tAcs: 4/6/7nsmax. ■ Popular 16K x 4 with common I/O organization |
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SY61B98-7 SY61B98-10 SY61B98-12 7/10/12ns 200mA 24-pin, 300-mil SY61B98 536-bit 384-words-by-4bits | |
Contextual Info: M O S E L V tT E L IC MS6264H 8K x 8 HIGH SPEED CMOS STATIC RAM Preliminary Features Description • High-speed - 15/20 ns ■ Low Power dissipation: — 825mW Max. Operating — 550(xW (Max.) Power Down ■ 5 V + 10% supply ■ Fully static operation ■ TTL compatible I/O |
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MS6264H 825mW MS6264H 536-bit 28-pin MS6264H-15NC MS6264H-15RC MS6264H-20NC MS6264H-20RC | |
Contextual Info: PRELIMINARY SYNERGY S E M IC O N D U C T O R TTL BICMOS STATIC RAM 64K 16K X 4-BIT K 1 DESCRIPTION FEATURES • ■ ■ ■ ■ Address access time, tA A : 7/10/12ns max. Chip select access time, tACs: 4/6/7nsmax. Popular 16K x 4 with common I/O organization |
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SY71B98-7 SY71B98-10 SY71B98-12 SY71B98 536-bit 384-words-by-4bits SY71B98-7/10/12 SY71B98-7YC SY71B98-10YC | |
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z920Contextual Info: MOSEL VI TEL IC P R ELIM IN A R Y V62C51864 8 K X 8 S TA TIC R A M Features Description • High-speed: 35, 70 ns ■ Ultra low DC operating current of 5mA max. ■ Low Power Dissipation: - TTL Standby: 2 mA (Max.) - CMOS Standby: 15 jjA (Max.) ■ Fully static operation |
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V62C51864 28-pin 536-bit z920 | |
18p8
Abstract: 18v8 23S8
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GA23SV8/GA23S8 20-pin GA23SV8 18p8 18v8 23S8 | |
Contextual Info: High-Speed C M O S 9 r 1-of-8 Decoders QS54/74FCT238T Q u a lity S em ic o n d u c to r , I n c . FEATURES/BENEFITS DESCRIPTION • • • • • • • • • The QSFCT138T and QSFCT238T are high-speed CMOS TTL-compatible high-speed binary decod |
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QS54/74FCT238T QSFCT138T QSFCT238T AN-001) QSFCT138A 1313D MDSL-00003-04 | |
V62C51864
Abstract: 8KX8-Bit CMOS SRAM
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V62C51864 28-pin 536-bit b3533Tl 8KX8-Bit CMOS SRAM | |
Contextual Info: MOSEL V IT E L IC PRELIMINARY V62C5181024 1 2 8 K X 8 S TA TIC R A M Features • Packages - 32-pin TSOP Standard - 32-pin 600 mil PDIP - 32-pin 440 mil SOP (525 mil pin-to-pin) ■ High-speed: 35, 70 ns ■ Ultra low DC operating current of 5mA (max.) TTL Standby: 5 mA (Max.) |
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V62C5181024 32-pin | |
ga22vp10-7 gazelle
Abstract: 80386 80386 microprocessor pin out diagram Federal fuse switch GA22V10
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GA22VP10 GA22VP10-7SC-GP GA22VP10-10SM-GP ga22vp10-7 gazelle 80386 80386 microprocessor pin out diagram Federal fuse switch GA22V10 | |
Contextual Info: 1 Q S High-Speed C M O S 51 r 1 -of-8 Decoders QS54/74FCT238T u a l it y e m ic o n d u c t o r , I n c . FEATURES/BENEFITS DESCRIPTION • • • • • • • • • The QSFCT 138T and QSFCT238T are high-speed CMOS TTL-compatible high-speed binary decod |
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QS54/74FCT238T SFCT138A QSFCT238T QSFCT138T DSL-00003-04 | |
62C51864Contextual Info: M OSEL V I T E L I C P R E L IM IN A R Y V 62C 51864 8 K X 8 S T A T IC R A M Features Description • High-speed: 35, 70 ns ■ Ultra low DC operating current of 5mA max. ■ Low Power Dissipation: - TTL Standby: 2 mA (Max.) - CMOS Standby: 15 ^A (Max.) |
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28-pin V62C51864 536-bit V62C51864 62C51864 | |
Contextual Info: a WS512K32B-XXXE M/HITE /M ICROELECTRONICS 512Kx32 SRAM MODULE PRELIMINARY* FEATURES A c c e s s T i m e s o f 1 5 , 1 7 , 20, 2 5 n s • TTL C o m p a t i b l e In p u ts a nd O u tp u t s ■ L o w P o w e r B iC M O S ■ 5 V o l t P o w e r S u p p ly |
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WS512K32B-XXXE 512Kx32 | |
Contextual Info: WPS256K32-XPJX M/HITE /MICROELECTRONICS 256Kx32 SRAM MODULE ADVANCED* FEATURES • ■ A c c e s s T im e s ■ C o m m e r c ia l a nd In d u s tr ia l T e m p e r a t u r e R a ng e s B iC M O S : 1 2 , 1 5 n s ■ TTL C o m p a t i b l e In p u ts a nd C M O S O u tp u t s |
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WPS256K32-XPJX 256Kx32 |