TT 46 N 12 Search Results

MPC755

Abstract: motorola g18 MPC7400 MPC7410 MPC750 DH-04
Contextual Info: Advance Information AN1812/D Rev. 1, 12/2001 Common Footprint for the MPC750, MPC755, MPC7400, and MPC7410 CPD Applications This document describes how to design a platform with a common footprint for the MPC750, MPC755, MPC7400, and MPC7410; that is, it is intended to help design a single board

HB56UW1673E-5

Abstract: HB56UW1673E-6 HM5165405 Hitachi DSA00200 Nippon capacitors
Contextual Info: HB56UW1673E-5/6 128MB Buffered EDO DRAM DIMM 16-Mword x 72-bit, 4k Refresh, 1 Bank Module 18 pcs of 16M × 4 components ADE-203-854A (Z) Rev. 1.0 May. 15, 1998 Description The HB56UW1673E belongs to 8-byte DIMM (Dual in-line Memory Module) family , and have been

Nippon capacitors

Abstract: HB56AW1672E-5 HB56AW1672E-6 Hitachi DSA00196
Contextual Info: HB56AW1672E-5/6 128MB Buffered FP DRAM DIMM 16-Mword x 72-bit, 8k Refresh, 1 Bank Module 18 pcs of 16M × 4 components ADE-203-857A(Z) Rev. 1.0 Jul. 6, 1998 Description The HB56AW1672E belongs to 8-byte DIMM (Dual in-line Memory Module) family , and has been

Contextual Info: EUPEC S2E J> m 34032^7 GOOOMMl 77b « U P E C T 24 F Typenreihe/Type range 200 400 600 800 900 1000 1100* 1200* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Vdrm Vrrm Maximum permissible values •trmsm Itavm Itsm / i 2dt di/dt cr

Hitachi DSA00164

Abstract: Nippon capacitors
Contextual Info: HB56UW1673E-5/6 128MB Buffered EDO DRAM DIMM 16-Mword x 72-bit, 4k Refresh, 1 Bank Module 18 pcs of 16M × 4 components ADE-203-854A (Z) Rev. 1.0 May 15, 1998 Description The HB56UW1673E belongs to 8-byte DIMM (Dual in-line Memory Module) family , and have been

Hitachi DSA00164

Abstract: Nippon capacitors
Contextual Info: HB56UW1672E-5/6 128MB Buffered EDO DRAM DIMM 16-Mword x 72-bit, 8k Refresh, 1 Bank Module 18 pcs of 16M × 4 components ADE-203-855A (Z) Rev. 1.0 May 15, 1998 Description The HB56UW1672E belongs to 8-byte DIMM (Dual in-line Memory Module) family , and has been

HB56UW1672E-5

Abstract: HB56UW1672E-6 HM5164405 Hitachi DSA00196 Nippon capacitors
Contextual Info: HB56UW1672E-5/6 128MB Buffered EDO DRAM DIMM 16-Mword x 72-bit, 8k Refresh, 1 Bank Module 18 pcs of 16M × 4 components ADE-203-855A (Z) Rev. 1.0 May. 15, 1998 Description The HB56UW1672E belongs to 8-byte DIMM (Dual in-line Memory Module) family , and has been

Contextual Info: EUPEC S5E ]> 34032^7 ÜÜÜQSSa ^SQ M U P E C A 518 S - T ^ Z S - Z O 600 Typenreihe/Type range 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values 600.1300 V V 15 V 50 Vdrm Vrrm Vrrm C

Contextual Info: 34032^7 0000515 5b5 * U P E C SSE D E UP EC T 509 S T 510 S Typenreihe/Type range 600 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values V 600. 1200 600. 1200 V V qrm Vrrm 800 1000 1500 510 960 9500 8400

Contextual Info: 19-1234; Rev 1; 3/98 J V \A Y A J V \ 9 0 0 M H z Im a g e -R e je c t T ra n s c e iv e rs _ Features The MAX2420/MAX2421/MAX2422/MAX2460/MAX2463 are highly integrated front-end ICs that provide the lowest cost solution for cordless phones and ISM-band radios

HC367

Abstract: SN54HC367 SN74HC367
Contextual Info: SN54HC367, SN74HC367 HEX BUFFERS AND LINE DRIVERS WITH 3-STATE OUTPUTS SN54HC367 . . . J OR W PACKAGE SN74HC367 . . . D OR N PACKAGE TOP VIEW 10E [ 1 1A1 [ 2 1Y1 [ 3 16 ] VCC 15 j 2 0 E 14 ] 2A2 1A2 [ 4 1Y2 [ 5 1A3 [ 6 13 j 2Y2 12 j 2A1 11 j 2Y1 10 ] 1A4

EUPEC TT 60 f

Contextual Info: EUPEC T> S2E 34032^7 00G0SD3 Ö43 • UPEC T 388 S - Z S - / 9 Typenreihe/Type range 600 800 900 1000 1100 1200* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values V drm V rrm Itrmsm •tavm Itsm /i2dt di/dt cr

Contextual Info: SSE ]> EUPEC • BMDBET? DOGGM'I'ì 5=12 « U P E C T 318 F 7 ^ 2 5 - /^ Typenreihe/Type range 600 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Hochstzulässige Werte Maximum permissible values 600.1300 V 600.1300 V V drm V rrm

Contextual Info: 5EE T> E U PE C 34035^7 0000542 5^3 • U P E C A 158 S 600 Typenreihe/Type range 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values V drm 6 0 0 . 1 3 0 0 V rrm 15 V 50 V V r r m C

Contextual Info: Customer Information Sheet DRAWING No.: SHEET 2 OF 2 M2 2-55202XXR 12.00 £ 2.00 TYP- | TYP 4.00 I . 75 IF IN DOUBT - ASK 1 .50 | CO I NOT TO SCALE | THIRD ANGLE PROJECTION | ALL DIMENSIONS IN + 0. 10 TYP 2.00 TYP !<- 0 0 0 0 0 0 € - 6 . 7 5± 0 . 1 0 7.50

NTT Electronics GaAs

Abstract: NLG4306 369PC
Contextual Info: NEL NS GD E10BA 11 Jan. 2001 PRELIMINARY NLG4306 12.5 Gb/s 16 : 1 MUX The NLG4306 is an ultra-fast 16:1 multiplexer. NLG4306 combines 16 parallel input signals operating at up to 781.25M b/s into a single serial output signal as fast as 12.5 Gb/s M I N . .

Contextual Info: January 1997 Revision 2.0 D A T A S H E E T - SDC4UV7242- 67/84/100/125 T-S 32MByte (4M x 72) CMOS Synchronous DRAM Module - ECC General Description The SDC4UV7242-(67/84/100/125)T-S is a high performance, 32-megabtye synchronous, dynamic RAM module organized as

Contextual Info: INTEGRATE] D EV IC E _ bûE D H 4Û25771 OOlB^a? TTT • IDT 64 X 36 CMOS SyncFlFO p \ f i ) fdt) ADVANCED INFORMATION IDT723611 Integrated Device Technology, Inc. FEATURES: • Available in 132-pin Plastic Quad Flatpack (PQF) or space-saving 120-pin Thin Q uad Flatpack (PF)

socapex tvs 06

Abstract: 21-33384-51 TV07RW nf22q100 9226x socapex 127 series TV09R TV07*W TV07R 21-33387-31
Contextual Info: Amphenol Tri-Start Subminiature Cylindrical Connectors 12-092-14 MIL-DTL-38999, Series III • Aluminum • Stainless Steel/Firewall • Composite • Clutch-Lok® High Vibration Amphenol Corporation Amphenol Aerospace 40-60 Delaware Avenue Sidney, New York 13838-1395

EUPEC TT 60 f

Contextual Info: D60N 7 ~ 0 1 -3 .1 D60NR EUPEC 52E D • anaBsi? oaaoöflfi 33o ■ upec Typen reihe/Type range_ D 60 N /D 60 N R _ 400 _ 800_ 1200_ 1400_ 1600 Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte

4E20-8

Abstract: 1N3299 1N3300 1N3300A 1N3303 1N3303A 1N3304 1N3489 1N3489A 1N3490
Contextual Info: FOUR LAYER DIODES Parameters for All 4-Layer Diodes @ 25°C Switching current Is 125|aA Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current

Hitachi DSA00164

Contextual Info: HM5113165F Series 128M EDO DRAM 8-Mword x 16-bit 4k refresh ADE-203-1051B(Z) Rev. 2.0 Dec. 6, 1999 Description The Hitachi HM5113165F Series is 128M-bit dynamic RAM organized as 8,388,608-word × 16-bit. It has realized high performance and low power by employing CMOS process technology. HM5113165F Series

HM5113165LTD-5

Abstract: HM5113165LTD-6 HM5113165TD-5 HM5113165TD-6 Hitachi DSA00201 mw828
Contextual Info: HM5113165 Series 128M EDO DRAM 8-Mword x 16-bit 4k refresh ADE-203-838(Z) Preliminary Rev. 0.0 Oct. 13, 1997 Description The Hitachi HM5113165 Series is 128M-bit dynamic RAM organized as 8,388,608-word × 16-bit. It has realized high performance and low power by employing CMOS process technology. HM5113165 Series

SN74LVC16541

Abstract: 10E1
Contextual Info: SN74LVC16541 16-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS SGAS350 - MARCH 1994 DGG OR DL PACKAGE TOP VIEW 1Ü ET[ 1 1Y1 [ 2 1Y2 [ 3 g n d [ 4 1Y6 [ 9 GND [ 10 1Y7 [ 11 39 ÎG N D 38 ] 1A7 1Y8 [ 12 2Y1 [ 13 37 j 1A8 36 ] 2A1 35 ] 2A2 v cc t 7 1Y5 [ 8 description