TSTS710 Search Results
TSTS710 Datasheets (6)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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TSTS710. | Vishay Siliconix | GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case | Original | 82.63KB | 5 | ||
TSTS710 | Vishay Telefunken | GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case | Original | 82.63KB | 5 | ||
TSTS7100 | Vishay Telefunken | GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case | Original | 82.63KB | 5 | ||
TSTS7101 | Vishay Telefunken | GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case | Original | 82.63KB | 5 | ||
TSTS7102 | Vishay Telefunken | GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case | Original | 82.63KB | 5 | ||
TSTS7103 | Vishay Telefunken | GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case | Original | 82.63KB | 5 |
TSTS710 Price and Stock
Vishay Semiconductors TSTS7100EMITTER IR 950NM 250MA TO18 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSTS7100 | Bulk | 6,807 | 1 |
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Vishay Intertechnologies TSTS7100- Bulk (Alt: 46Y2652) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSTS7100 | Bulk | 1 |
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TSTS7100 | 2,560 |
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TSTS7100 | Bulk | 1,344 | 1 |
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TSTS7100 | 924 |
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TSTS7100 | Bulk | 1,000 |
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TSTS7100 | 53,500 |
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TSTS7100 | 7 Weeks | 1,000 |
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Temic Semiconductors TSTS7100INFRARED LED, 3.9MM, 1-ELEMENT, 950NM |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSTS7100 | 477 |
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tfk TSTS7101GAAS IR EMITTING DIODE IN HERMETICALLY SEALED TO-18 CASE Infrared LED, 3.9mm, 1-Element, 950nm |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSTS7101 | 25,175 |
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tfk TSTS7103GAAS IR EMITTING DIODE IN HERMETICALLY SEALED TO-18 CASE Infrared LED, 3.9mm, 1-Element, 950nm |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSTS7103 | 358 |
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TSTS710 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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TSTS710Contextual Info: Tem ic TSTS710. S e m i c o n d u c t o r s GaAs IR Emitting Diodes in Hermetically Sealed TO 18 Case Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed T O -18 pack age. Their glass lenses provide a very high radiant |
OCR Scan |
TSTS710. D-74025 15-Jul-96 TSTS710 | |
Contextual Info: TSTS710. Vishay Telefunken GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a very high radiant intensity without external optics. |
Original |
TSTS710. D-74025 20-May-99 | |
Contextual Info: TSTS7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • High radiant intensity |
Original |
TSTS7100 2002/95/EC 2002/96/EC TSTS7100 11-Mar-11 | |
tsts 7102Contextual Info: TSTS710. VISHAY Vishay Semiconductors GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their glass lenses provide a very high radiant intensity without external optics. |
Original |
TSTS710. D-74025 11-May-04 tsts 7102 | |
Contextual Info: TSTS7100 VISHAY Vishay Semiconductors GaAs IR Emitting Diodes in Hermetically Sealed TO-18 Case Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their glass lenses provide a very high radiant intensity without external optics. |
Original |
TSTS7100 TSTS710. D-74025 23-Jun-04 | |
Contextual Info: TSTS7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • High radiant intensity |
Original |
TSTS7100 2002/95/EC 2002/96/EC TSTS7100 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
TSTS 7102
Abstract: TSTS710 TSTS7101 TSTS7100 TSTS7102 TSTS7103
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TSTS710. D-74025 20-May-99 TSTS 7102 TSTS710 TSTS7101 TSTS7100 TSTS7102 TSTS7103 | |
Contextual Info: TSTS7100 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their glass lenses provide a very high radiant intensity without external optics. |
Original |
TSTS7100 TSTS710. 2002/95/EC 2002/96/EC 08-Apr-05 | |
TSTS710Contextual Info: TSTS7100 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their glass lenses provide a very high radiant intensity without external optics. |
Original |
TSTS7100 TSTS710. 2002/95/EC 2002/96/EC D-74025 08-Mar-05 TSTS710 | |
Contextual Info: TSTS710. VISHAY Vishay Semiconductors GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their glass lenses provide a very high radiant intensity without external optics. |
Original |
TSTS710. D-74025 08-Apr-04 | |
TSTS7100
Abstract: TSTS710
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Original |
TSTS7100 TSTS710. 2002/95/EC 2002/96/EC 08-Apr-05 TSTS7100 TSTS710 | |
Contextual Info: TSTS7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • High radiant intensity |
Original |
TSTS7100 2002/95/EC 2002/96/EC TSTS7100 2002/95/EC. 2011/65/EU. JS709A | |
tsts 7102
Abstract: TSTS7101 TSTS710 TSTS7100 TSTS7102 TSTS7103
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TSTS710. D-74025 15-Jul-96 tsts 7102 TSTS7101 TSTS710 TSTS7100 TSTS7102 TSTS7103 | |
TSTS7100Contextual Info: TSTS7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • High radiant intensity |
Original |
TSTS7100 2002/95/EC 2002/96/EC TSTS7100 18-Jul-08 | |
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Contextual Info: TSTS710. Vishay Telefunken GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a very high radiant intensity without external optics. |
Original |
TSTS710. D-74025 20-May-99 | |
TSTS710
Abstract: tsts 7103
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Original |
TSTS710. D-74025 11-May-04 TSTS710 tsts 7103 | |
TSTS7101
Abstract: TSTS7102 TSTS710 TSTS7100 TSTS7103
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TSTS710. D-74025 20-May-99 TSTS7101 TSTS7102 TSTS710 TSTS7100 TSTS7103 | |
CQX48B
Abstract: TLH04400 TLRG542
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TLBR5410 TLDR4400 TLDR4900 TLDR5400 TLDR5800 TLHE4900 TLHE5100 TLHE5101 TLHE5102 TLHE5800 CQX48B TLH04400 TLRG542 | |
packagingContextual Info: Packaging and Order Information www.vishay.com Vishay Semiconductors Packaging and Order Information PACKAGING SURVEY RECOMMENDED METHOD OF STORAGE Dry box storage is recommended as soon as the dry bag has been opened to prevent moisture absorption. TABLE 1 - PACKAGING OPTIONS OF |
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TEKS5400S TEKT5400S TSKS5400S BP104 BPW34 BP104S BPW34S BP104S 02-Mar-15 packaging | |
c1g smd
Abstract: bpv10nf TEMD2100
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OCR Scan |
CQY36N CQY37N TSUS4300 TSUS4400 CQX48A CQX48B TSSS2600 TSUS5200 TSUS5201 TSUS5202 c1g smd bpv10nf TEMD2100 | |
"IR Emitter"
Abstract: TSTS7503 TSTS7101 30016
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OCR Scan |
TSHA4400 TSHA4401 TSHA5200 TSHA52 TSHA5202 TSHA5203 TSHA5500 TSHA5501 TSHA5502 TSHA5503 "IR Emitter" TSTS7503 TSTS7101 30016 | |
tept5600 response time
Abstract: Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000
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emit4-9337-2920 VSA-SG0041-0512 tept5600 response time Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000 | |
Leader 8020 schematics Oscilloscope
Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
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vse-db0103-0810 Leader 8020 schematics Oscilloscope smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s | |
diode SR 360
Abstract: IEC 62471 60825-1 IEC-60825 diode sr 60 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet
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11-Sep-08 diode SR 360 IEC 62471 60825-1 IEC-60825 diode sr 60 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet |