TSHA52 Search Results

U2740B-FP

Abstract: NPN planar RF transistor 16 bit ic rf encoder programmable read write transponder transistor C892 e5550F-S8 M44C0W RF ENCODER RF 125khz receiver ir preamplifier
Contextual Info: Tem ic S e m i c o n d u c t o r s Selector Guide Remote Control Part Number Function Key Features Package IR Transm itter / Receiver BPV23NF PIN diode IR photo detector, 875 to 950 nm, sensitivity typical 65 ^A TSHA520. IR emitter family High efficiency, ± 12°, 875 nm

LT 5203

Abstract: a5201
Contextual Info: Temic TSHA520. S h m i n n d u t l •* r v GaAlAs Infrared Emitting Diodes in 05 mm (T-1% Package Description The TSH A 520. series are high efficiency infrared em itting diodes in G aA lA s on G aA lA s technology, m olded in a clear, untinted plastic package.

8002E

Contextual Info: Tem ic TSHA520 S e m i c o n d u c t o r s GaAlAs Infrared Emitting Diodes in 05 mm T-1% Package Description The TSHA520. series are high efficiency infrared emit­ ting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package,

Ir photodiodes

Contextual Info: TSHA520. Vishay Telefunken ¾ GaAlAs Infrared Emitting Diodes in ø 5 mm T–1 Package Description 94 8390 The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs

Contextual Info: TSHA520. VISHAY Vishay Semiconductors GaAlAs Infrared Emitting Diodes in ∅ 5 mm T-1¾ Package Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about

TSHA520

Abstract: TSHA5200 TSHA5201 TSHA5202 TSHA5203
Contextual Info: TSHA520. Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about

Contextual Info: TSHA5200, TSHA5201, TSHA5202, TSHA5203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm

"IR Emitter"

Abstract: TSTS7503 TSTS7101 30016
Contextual Info: Temic Semiconductors Characteristics +/-< » Ie / mW/sr i& t,-*tf / ns Package Ip/mA Type High-Performance IR Emitter GaAlAs (870 nm in Plastic Package TSHA4400 30016) 40025) TSHA5200 TSHA52ÜJ 50030) 12° TSHA5202 . . . . 60036) 300 TSHA5203 - Ip/m A 20(>12)

Contextual Info: TSHA520. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 5 mm T–1¾ Package Description 94 8390 The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs

tsha 5201

Abstract: TSHA5202 TSHA520 TSHA5200 TSHA5201 TSHA5203
Contextual Info: TSHA520. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.

Contextual Info: TSHA520. VISHAY Vishay Semiconductors GaAlAs Infrared Emitting Diodes in ∅ 5 mm T-1¾ Package Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about

Contextual Info: TSHA520. VISHAY Vishay Semiconductors GaAlAs Infrared Emitting Diodes in ∅ 5 mm T-1¾ Package Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about

TSHA5202

Contextual Info: TSHA5200, TSHA5201, TSHA5202, TSHA5203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm

TSHA520

Abstract: TSHA5200 TSHA5201 TSHA5202 TSHA5203
Contextual Info: TSHA520. GaAlAs Infrared Emitting Diodes in ø5 mm T–1¾ Package Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 %

TSHA520

Abstract: TSHA5200 TSHA5201 TSHA5202 TSHA5203
Contextual Info: TSHA520. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.

TSHA 5202

Abstract: TSHA520 TSHA5200 TSHA5201 TSHA5202 TSHA5203
Contextual Info: TSHA520. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 5 mm T–1¾ Package Description 94 8390 The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs

U2535B

Abstract: S852T BFR92A U9280M TK5560A-PP
Contextual Info: Te M ie Semiconductors General Information Alphanumeric Index BFQ67 10, 142 TK5550 11,304 BFR92A 10, 151 TK5560A-PP 11,337 BPV23NF 10,91 TSHA520. 10, 95

Contextual Info: TSHA5200, TSHA5201, TSHA5202, TSHA5203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm

TSHA5202

Abstract: TSHA520 TSHA5200 TSHA5201 TSHA5203
Contextual Info: TSHA5200, TSHA5201, TSHA5202, TSHA5203 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: λp = 875 nm

tsha 5201

Abstract: TSHA520 TSHA5200 TSHA5201 TSHA5202 TSHA5203
Contextual Info: TSHA520. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 5 mm T–1¾ Package Description 94 8390 The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs

TSHA5203

Contextual Info: TSHA5200, TSHA5201, TSHA5202, TSHA5203 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm

TSHA520

Abstract: TSHA5200 TSHA5201 TSHA5202 TSHA5203
Contextual Info: TSHA520. Vishay Semiconductors ¾ GaAlAs Infrared Emitting Diodes in ø 5 mm T–1 Package Description 94 8390 The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.

telefunken ha 880

Contextual Info: T em ic TSHA620 S e m i c o n d u c t o r s GaAlAs Infrared Emitting Diodes in 05 mm T-P/t Package Description The TSHA620. series are high efficiency infrared emit­ ting diodes in GaAlAs on GaAIAs technology, molded in a clear, untinted plastic package.

ir transmitter receiver

Abstract: NPN planar RF transistor 4311B U2535B RF amplifier SOT23 5 IC for IR receiver fm transmitter dip 200 hn ir remote decoder IC rf transmitter receiver
Contextual Info: Tem ic Semiconductors # * SOT23 SOT143 S08 DIP16 ► SOK SS028 Remote Control/ Keyless Entry ICs Part Number Function Key Features Package Source IR Transmitter / Receiver BPV23NF PIN diode see Opto section IR photo detector, 875 to 950 nm, sensitivity typical 65 |UA