TSHA620 Search Results

telefunken ha 880

Contextual Info: T em ic TSHA620 S e m i c o n d u c t o r s GaAlAs Infrared Emitting Diodes in 05 mm T-P/t Package Description The TSHA620. series are high efficiency infrared emit­ ting diodes in GaAlAs on GaAIAs technology, molded in a clear, untinted plastic package.

Contextual Info: TSHA620. VISHAY Vishay Semiconductors GaAlAs Infrared Emitting Diodes in ∅ 5 mm T-1¾ Package Description The TSHA620. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about

Contextual Info: TSHA620. VISHAY Vishay Semiconductors GaAlAs Infrared Emitting Diodes in ∅ 5 mm T-1¾ Package Description The TSHA620. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about

TSHA6203

Abstract: TSHA620 TSHA6200 TSHA6201 TSHA6202
Contextual Info: TSHA6200, TSHA6201, TSHA6202, TSHA6203 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 875 nm High reliability

Contextual Info: TSHA620. Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA620. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about

TSHA620

Abstract: TSHA6202 TSHA520 TSHA6200 TSHA6201 TSHA6203
Contextual Info: TSHA620. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA620. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.

Contextual Info: TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability

tsha 6203

Abstract: TSHA6202 TSHA520 TSHA620 TSHA6200 TSHA6201 TSHA6203
Contextual Info: TSHA620. GaAlAs Infrared Emitting Diodes in ø5 mm T–1¾ Package Description The TSHA620. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 %

TSHA520

Abstract: TSHA620 TSHA6200 TSHA6201 TSHA6202 TSHA6203
Contextual Info: TSHA620. Vishay Semiconductors ¾ GaAlAs Infrared Emitting Diodes in ø 5 mm T–1 Package Description 94 8389 The TSHA620. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.

TSHA6202

Abstract: TSHA620 TSHA6200 TSHA6201 TSHA6203 tsha-6203 sr 460 diode
Contextual Info: TSHA6200, TSHA6201, TSHA6202, TSHA6203 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 875 nm High reliability

Contextual Info: TSHA6200, TSHA6201, TSHA6202, TSHA6203 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 875 nm High reliability

Contextual Info: TSHA620. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 5 mm T–1¾ Package Description 94 8389 The TSHA620. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs

TSHA520

Abstract: TSHA620 TSHA6200 TSHA6201 TSHA6202 TSHA6203
Contextual Info: TSHA620. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 5 mm T–1¾ Package Description 94 8389 The TSHA620. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs

Contextual Info: TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability

Contextual Info: TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability

Contextual Info: TSHA620. Vishay Telefunken ¾ GaAlAs Infrared Emitting Diodes in ø 5 mm T–1 Package Description 94 8389 The TSHA620. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs

TSHA520

Abstract: TSHA620 TSHA6200 TSHA6201 TSHA6202 TSHA6203
Contextual Info: TSHA620. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 5 mm T–1¾ Package Description 94 8389 The TSHA620. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs

Contextual Info: TSHA6200, TSHA6201, TSHA6202, TSHA6203 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability

Contextual Info: TSHA620. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA620. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.

Contextual Info: TSHA620. VISHAY Vishay Semiconductors GaAlAs Infrared Emitting Diodes in ∅ 5 mm T-1¾ Package Description The TSHA620. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about

CQX48B

Abstract: TLH04400 TLRG542
Contextual Info: V I^ ^ Y Vishay Telefunken Table of Virtual Source Sizes Part Nunber Virtual Source Size mm Part Nunber Virtual Source Size (mm) Part Nunber Virtual Source Size (mm) TLBR5410 3.6 TLHP5800 3.7 TLLY5401 3.7 TLDR4400 2.1 TLHR4200 1.5 TLMA3100 1.8 TLDR4900 2

A 69157 scr

Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Contextual Info: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer

c1g smd

Abstract: bpv10nf TEMD2100
Contextual Info: Tem ic S e m i c o n d u c t o r s Selector Guide Infrared Emitting Diodes Characteristics Package Type +/-<p 1 ¡e /m W /sr @ Ip /m A { V p /V @ Ip /m A tr , tf / ns Standard IR Emitters GaAs 950 nm in Plastic Package CQY36N ais=— = r d ] -

CQX48B

Abstract: IR Emitters "IR Emitters"
Contextual Info: VISH A Y Vishay Telefunken ▼ Selector Guide IREDs Infrared Emitting Diodes Package Dim. Fig- Characteristics Jype + /- tp Standard IR Emitters GaAs 950 nm in Plastic Package T 40° 25 ! CQY36N am 10 26 L / mW/sr Ip / mA VF/ V CQY37N 12 ° 5 (>2.2) TSUS4400