TSS0P8 Search Results

2SC4630LS

Abstract: 2SC4631LS 2SC4632LS 2SC4633LS 2SC4634LS 2SC4635LS 2SC4636LS 2SC4637LS 2SC4710LS T0-126ML
Contextual Info: SAflYO T r a n s i s t o r s f o r V e r y H i g h - D e f in i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 3 afci D y n a m i cs F ' o c s t j i s U s e ( N o p i c t u r e e v e r o u t of f o c u s w i t h b e t t e r f o c u s c h a r a c t e r i s t i c s )

IRF 850 mosfet

Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
Contextual Info: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.

TSS0P8

Abstract: PMWD15UN PMWD16UN PMWD18UN PMWD19UN PMWD26UN PMWD30UN SC75 SC89 20031
Contextual Info: |iTrenchMOS «IfJSfflElfrilf1? Tssopsitf^ffijpg^gMosFETs f f i ^ ? I J f f l M T S S O P 8 t i s g l ^ 2 0 V ' 3 0 V F *3 ^ !lM O S F E T » fi|IJiTW|iTrenchMOSjlnnn^^JSi#M JPM s • Semiconductors M ffi^ ^ ^ T re n c h M O S ^ 'IM ’ 5pJfflfJ*ff«J > & /M is g * a ij!g

varistor sem ad 222 m

Abstract: varistor 222 ste Surgector varistor Z 500 ps
Contextual Info: Overvoltage Suppression Facts V oltage T ra n s ie n ts can be d e fin e d as sho rt du ra tio n e xcu rsio n s o r surges of e le ctrica l energy. T ra n s ie n ts re sult fro m th e s ud den re le ase of pre vio u sly s to re d energy. In te rm s of e le ctrica l o r e le c tro n ic circuits, this

Contextual Info: M95040 M95020, M95010 4K/2K/1K Serial SPI EEPROM with High Speed Clock and Positive Clock Strobe PRELIMINARY DATA 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE - 4.5V to 5.5V for M950x0 - 2.5V to 5.5V for M950x0-W - 1,8V to 3.6V for M950x0-R

Contextual Info: M93C86, M93C76, M93C66 M93C56, M93C46, M93C06 16 K/8 K/4 K/2 K/1 K/256 x8/x16 Serial Microwire Bus EEPROM • INDUSTRY STANDARD MICROWIRE BUS ■ 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: by WORD (x16) or by BYTE (x8)

M24C16

Contextual Info: SGS-THOMSON . llIlMJilLIlMWDÊi M24C16, M24C08 M24C04, M24C02, M24C01 16K/8K/4K/2K/1K SERIAL l2C BUS EEPROM PRODUCT PREVIEW TWO WIRE l2C SERIAL INTERFACE SUPPORTS 400kHz PROTOCOL 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION 2ms TYPICAL PROGRAMMING TIME

sanyo transistor tt series

Abstract: TO225 LEAD FORMING TRANSISTORS SANYO sanyo transistor SSFP package 2SB1269 2SB1449 2SB1450 2SC5264 2SC5420
Contextual Info: Power Transistor Surface Mount Package S M P Surface Mount Power In r e c e n t y e a r s s u r f a c e m ount s e m ic o n d u c to r p ro d u c ts have found wide a p p li c a t io n from s m a ll - s i g n a l consum er equipm ent to h ig h -p o w e r i n d u s t r i a l e q u ip m e n t.

k669 transistor

Abstract: k544 K932 transistor mosfet k544 k427 transistor k583 k427 K932 k222 mosfet k546
Contextual Info: SAfÊYO Small-signal Junction FETs/MOSFETs F e a tu re s Case O u tlin e s unit.'m m SANYO:SMCP 1 : S ource, 2 : Drá i n, 3 : Ga te * V e r y low n o is e f ig u r e * L arge |Y f s | * Low g a te le a k c u r r e n t * S m a ll-s iz e d package p e r m ittin g FET-used s e t s to be made s m a lle r

C4106 transistor

Abstract: C4106 transistor c3457 B824 transistor c4106 semiconductor transistor c3447 transistor c4106 transistor d1061 D1060 d1061
Contextual Info: SA\YO T0-220MF Mini Fin Power Transistor Series Features Sanyo power tra n sisto r case o utline T0-220MF (Mini Fin) is a sm all-sized package suited for mounting on electronic equipment th at is lim ited in height. When mounted on the board, the height above the board is approximately 10mm lower

N and P MOSFET

Contextual Info: # GF2918 Dual N-Channel Enhancement-Mode MOSFET V d s 30V R d S ON 18m£2 I d 7.8A Mechanical Data Features Case: SO-8 molded plastic body • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance Terminals: Leads solderable per MIL-STD-750,

SPD221P

Abstract: SPD221R sanyo transistor SGD102 SGD102T SPD121 MCP6 Marking sanyo SPD121P SPD122P SPD221
Contextual Info: S A f/ Y O GaAs Di odes 1 j f c GaAs Schot tky Bar-r-ier Di odes Packaged Type The Sanyo SPD Series are packaged type GaAs Schottky barrier diodes designed for converters, modulators,detectors that can be operated in the X band (8.2 to 12.4GHz) and KU band (12.4 to 18.0GHz).

2SK2437

Abstract: CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking
Contextual Info: Medium Output Power M0SFETs 2 LD S r~ i e s (L owD rive)VDS S :1 2V — 200V(F.C.P:F 1 a t SAfÈYO Channe 1 P i-o c e s s) SANYO has realized low-threshold voltage by optimum design of impurity concentration of Si or Si surface by adopting the F.C. P. process

M34W

Contextual Info: /= T S G S -T H O M S O N M34W02 2Kbit Serial EEPROM with Software Data Protection PRELIMINARY DATA TWO WIRE l2C SERIAL INTERFACE SUPPORTS 400kHz PROTOCOL 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for M34W02

Contextual Info: SGS-THOMSON M34C02 llllMJilLliMWIiei 2K SERIAL EEPROM for DIMM SERIAL PRESENCE DETECT PRELIMINARY DATA TW O WIRE l2C SERIAL INTERFACE, SUPPORTS 400kHz PROTOCOL 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for M34C02

Contextual Info: M34C02 2 Kbit Serial EEPROM for DIMM Serial Presence Detect • TWO WIRE l2C SERIAL INTERFACE, SUPPORTS 400kHz PROTOCOL ■ 1 MILLION ERASE/WRITE CYCLES ■ 40 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for M34C02 - 2.5V to 5.5V for M34C02-W

Contextual Info: SAtfYO P o w e r S c h o t t k y B a r r i e r D i o d e s For L a r g e - S i g n a l Use Sanyo Schottky barrier diodes (SBD) have been developed by our original technology. They are available for making sets smaller in size and lighter in veight. Sanyo power SBDs with breakdown voltages of 50V, 90V and 180V can be applied to various uses.

NPN Transistor 600V SC-62

Abstract: 2SK2632 2SK1413 SANYO BIPOLAR transistor pcp SANYO SC-62 2SK1924 2SK2623 2SK1412LS 2SK1461 2SK1923
Contextual Info: Large-signal Power M0SFETs 5 The Sanyo J-MOS series u tiliz e s Sanyo’s own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for v irtu a lly any types of power electronic equipment, the UH Series, AP Series and

2SC3253

Abstract: 2SB1267 2SB1467 2SB903 2SB919 2SD1212 2SD1235 2SD1903 2SD2218 SC74
Contextual Info: Low-Saturation Voltage Series T0~220, M F ,ML Package A p p ] i c a t i o n s * Relay d r i v e r s . * High-speed in v e rte rs . * C onverters. * H igh-current F e a t u r e s * Low V C E ( s a t ) . * H i g h l y r e s i s t a n t t o b r e a k d o w n b e c a u s e o f w i d e ASO. * F a s t

2SA1829

Abstract: 2SC3790 p7060 2SC5291 T0-126ML 2SA1371 2SC4732 e1aj SANYO CP5 transistor 2sc3788
Contextual Info: Transistors for TV Display Video Output Use F e a t u r e s » E x c e lle n t HF c h a r a c t e r i s t i c . * Small re v e rse t r a n s f e r c ap a c ita n c e . * Complementary PNP and NPN types. ♦ Adoption o f MBIT, FBET p ro c e sse s. * H ighly r e s i s t a n t to d i e l e c t r i c breakdown.

2SD1213

Abstract: e1aj 2SB1511 2SB827 2SB828 2SB829 2SB904 2SD1063 2SD1064 2SD1065
Contextual Info: sa H y o Low-Saturation Voltage Series T0-3PB,ML Package A p p l F e a t u r e s * Low V C E( sa t ) . ♦ H i g h l y r e s i s t a n t to breakdown be c a use o f wide ASO. ♦ F a s t s w i t c h i n g speed. i c a t i o n s * R elay d r iv e r s . ♦ H ig h -sp e e d i n v e r t e r s .

24C02 wp st

Abstract: 24C04M M24C16
Contextual Info: 7 SGS -THOMSON M24ci 6, M24C08 » KfflDMILKÊTMDfèi M24C04, M24C02, M24C01 16K/8K/4K/2K/1K SERIAL l2C BUS EEPROM PRELIMINARY DATA • TW O WIRE l2C SERIAL INTERFACE SUPPORTS 400kHz PROTOCOL ■ 1 MILLION ERASE/WRrTE CYCLES ■ 40 YEARS DATA RETENTION ■ 2ms TYPICAL PROGRAMMING TIME

m9661

Abstract: M9625 M96320-R ufdfpn8 M96256-R M96M01 M9505 m9612 M96160-W M9632
Contextual Info: SPI ÍÍÍE E P R O M £ $ Storage Generic Part Number Cepaclty Automotive Serial Interface Orad» Spec KB) M96M01-R 1000 Supply Vottag« (Voc) 8upply Voltage (Voc) Clook Frequency (fS C l) M in (V) M ex(V) Max (MHz) SPI - 1.8 5.5 5 Paokege SO 08 WIDE.208 (EIAJ); S08: WLCSP-R5

2sc4105

Abstract: 2SC4427 2SC4106 2SC4107 2SC4160 2SC4161 2SC4162 2SC4163 2SC4164 2SC4219
Contextual Info: SWITC H I N G POWER TRANSISTOR SERIES Na2 F e a t u r e s ♦ S h o r t s w i t c h i n g time ♦ High breakdown voltage ♦ Wide ASO ♦ H i g h r e l i a b i l i t y b e c a u s e of p l a n a r ¿ate H i g h — S p e e d 'I'ype U s e * Swit c h i n g regulators