TSOP40 FLASH Search Results

1N914

Abstract: M28F411
Contextual Info: M28F411 M28F421 4 Megabit x 8, Block Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGE TSOP40 MEMORY ERASE in BLOCKS – One 16K Byte Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte Key Parameter Blocks

Contextual Info: 5 7 . S G S -T H O M S O N [fflM iH iM M B g S M28V841 LOW VOLTAGE 8 Megabit 1 Meg x 8, Sector Erase FLASH MEMORY PRODUCT PREVIEW • SMALL SIZE PLASTIC PACKAGES TSOP40 and S044 ■ MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each ■ 3V ± 0.3V SUPPLY VOLTAGE

Contextual Info: M 28V411 M 28V421 SGS-THOMSON ^ 7 # . IH [MillLI©lS©H gS LOW VOLTAGE 4 Megabit (x 8, Block Erase FLASH MEMORY PRELIMINARY DATA • SMALL SIZE PLASTIC PACKAGE TSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo­ cation) with hardware write and erase pro­

Contextual Info: SGS-THOMSON M28V841 l ll lM J i lL li M W I i e i LOW VOLTAGE 8 Megabit x 8, Sector Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGES TSOP40 and S044 MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE

Contextual Info: 5 7 . S G S -T H O M S O N M28F841 llll g [s 5 (Q I[L I T O © lJÌ!lD (g Ì 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY PREUMI NARY DATA • SMALL SIZE PLASTIC PACKAGES TSOP40 and S044 ■ MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each ■ 5V± 0.5V SUPPLY VOLTAGE

Atmel part numbering

Abstract: FBGA48 TFBGA48 te28f320b3bd 49XX TSOP32 Package TE28F320B3TD MBM29F080A tsop48 te28f320c3bd
Contextual Info: Standard NOR Flash family Cross-reference guide September 2005 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties

TAG 9109

Abstract: M35080 M95256 equivalent TSOP48 outline EEPROM 16MB NVRAM 1KB TSOP40 "dual access" "nonvolatile memory" -RFID ST1335 asm eagle
Contextual Info: MEMORY SELECTOR Leading Edge Memories • Fall 1998 GO Why a Broad Range? Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs BROAD RANGE STMicroelectronics is a world leader in

4MB flash bios chip

Abstract: 4MB flash bios chip 8 pin Chipsets TSOP32 PLCC32 TSOP32 Package M50FW016 M50FW040 M50FW080 M50LPW080
Contextual Info: Flash memories for PC BIOS Firmware Hub and Low Pin-Count solutions STMicroelectronics’ Firmware Hub and Low Pin-Count LPC memories are optimized solutions for storing the BIOS content of most desktop, server and laptop PCs. Compliant with LPC Interface Specification 1.1,

pmc flash pm49fl004t-33jc

Abstract: Pm49FL004T-33JC W39V040FAP winbond w39v040fap winbond bios w39v040ap pmc flash pm49fl002t-33jc W39V040AP ATMEL BIOS AT49lh00b4 PM49FL008T-33JC SST49LF004B-33-4C-NHE
Contextual Info: Flash memory for PC and server BIOS Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties

MLP8 2x3mm

Abstract: MLP8 m25p64 MARKING code mf stmicroelectronics AN2043 SO8 NARROW Part Marking STMicroelectronics flash memory EEPROM 16Mb M25P stmicroelectronics eeprom M25P16
Contextual Info: Serial EEPROM, serial Flash and application specific serial non-volatile memories Selection guide February 2005 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties

PLCC44 pinout

Abstract: PLCC44 M28F102 A534
Contextual Info: M28F102 1 Mbit 64Kb x16, Bulk Erase Flash Memory DATA BRIEFING 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical

m29F DATASHEET

Abstract: M29W320DB M28W640 M29Fxxx TFBGA63 M29DW640DB tsop48 M28W160CB M28W160CT M28W320ECT
Contextual Info: Flash memory solutions STMicroelectronics - May 2003 - Printed in Italy - All rights reserved ORDERCODE: CODE: BRFLASHCON/0503 ORDER for consumer applications For selected STMicroelectronics sales offices fax: France +33 1 55489569; Germany +49 89 4605454; Italy +39 02 8250449; Japan +81 3 57838216; Singapore +65 6481 5124;

M28W231

Contextual Info: M28W231 2 Mbit 256Kb x8, Boot Block Low Voltage Flash Memory DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Top location) with hardware

brief

Abstract: M28F411
Contextual Info: M28F411 4 Mbit 512Kb x8, Boot Block Flash memory DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% ROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Top location) with hardware

BIOS chip

Abstract: DD28F032SA E28F008SA TSOP 48 48-tsop memory TSOP56 PSOP4 E28F016XD FLASHPRO DA28F0
Contextual Info: Intel Corporation Memory Components Div. 1900 Prairie City Road Folsom Ca. 95630 Mail Stop: FM3-83 February 14, 1997 Intel Corp. 1900 Prairie City Rd. Folsom, CA 95630 Dear PROM Programmer Vendor: I am pleased to inform Intel Corp. that your PROM programming hardware and software has passed PROM

FDIP24W

Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS

M29W008A

Abstract: M29W008AB M29W008AT
Contextual Info: M29W008AT M29W008AB 8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 80ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.)

M28F102

Abstract: M29F102BB PLCC44
Contextual Info: M29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory DATA BRIEFING 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 35ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Word-by-Word

M29W008B

Abstract: M29W008T
Contextual Info: M29W008T M29W008B 8 Mbit 1Mb x8, Block Erase Low Voltage Single Supply Flash Memory DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.)

M29W116BB

Abstract: M29W116BT
Contextual Info: M29W116BT M29W116BB 16 Mbit 2Mb x8, Boot Block Low Voltage Single Supply Flash Memory DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 80ns FAST PROGRAMMING TIME: 13µs typical PROGRAM/ERASE CONTROLLER (P/E.C.)

TSOP40 Flash

Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS

Contextual Info: M29W017B 16 Mbit 2Mb x8, Uniform Block Low Voltage Single Supply Flash Memory DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 80ns FAST PROGRAMMING TIME: 13µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte

M29F105B

Abstract: 0087H
Contextual Info: M29F105B 1 Mbit 64Kb x16, Block Erase Single Supply Flash Memory DATA BRIEFING 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Word-by-Word

M29W004

Abstract: M29W004B M29W004T
Contextual Info: M29W004T M29W004B 4 Mb x8, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.)