TSOP40 FLASH Search Results

footprint so44

Contextual Info: M28V841 LOW VOLTAGE 8 Megabit x 8, Sector Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGES TSOP40 and SO44 MEMORY ERASE in SECTORS – 16 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE 10,000 PROGRAM/ERASE CYCLES per

TSOP40 Flash

Abstract: M28F102 QR105
Contextual Info: QUALIFICATION REPORT M28F102 1 Megabit 64K x 16 CMOS T5 FLASH MEMORY in TSOP40 INTRODUCTION The M28F102 is a 1 Megabit FLASH MEMORY organised as 64K x 16 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5 process which has been especially

f421

Abstract: v421 6080ns
Contextual Info: Gì. M28F411, F421 M28V411, V421 SGS-1H0MS0N IU CMOS 4 Megabit 512K x 8, 7 Block Erase _ FLASH MEMORY ABBREVIATED DATA SMALL SIZE TSOP40 PLASTIC PACKAGE - Normal and Reverse Pinout MEMORY ERASE in BLOCKS - One 16K Boot Block (top or bottom location)

M28F411

Contextual Info: M28F411 M28F421 4 Megabit x 8, Block Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGE TSOP40 MEMORY ERASE in BLOCKS – One 16K Byte Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte Key Parameter Blocks

Contextual Info: 5 7 . SGS-1H0MS0N M28F841 M28V841 m CMOS 8 Megabit 1 Meg x 8,16 x 64K Sector Erase _ FLASH MEMORY ABBREVIATED DATA SMALL SIZE TSOP40 and S044 PLASTIC PACKAGES - Normal and Reverse Pinout for TSOP ver­ sions MEMORY ERASE in SECTORS, 16 x 64K

1N914

Abstract: M28F411
Contextual Info: M28F411 M28F421 4 Megabit x 8, Block Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGE TSOP40 MEMORY ERASE in BLOCKS – One 16K Byte Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte Key Parameter Blocks

footprint so44

Contextual Info: M28V841 LOW VOLTAGE 8 Megabit x 8, Sector Erase FLASH MEMORY DATA BRIEFING SMALL SIZE PLASTIC PACKAGES TSOP40 and SO44 MEMORY ERASE in SECTORS – 16 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE 10,000 PROGRAM/ERASE CYCLES per

M28F211

Abstract: M28F221
Contextual Info: M28F211 M28F221 2 Megabit x 8, Block Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGE TSOP40 MEMORY ERASE in BLOCKS – One 16K Byte Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte Key Parameter Blocks

M28F211

Abstract: M28F221
Contextual Info: M28F211 M28F221 2 Megabit x 8, Block Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGE TSOP40 MEMORY ERASE in BLOCKS – One 16K Byte Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte Key Parameter Blocks

M28V411

Abstract: M28V421
Contextual Info: M28V411 M28V421 LOW VOLTAGE 4 Megabit x 8, Block Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGE TSOP40 MEMORY ERASE in BLOCKS – One 16K Byte Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte Key Parameter Blocks

Contextual Info: QUALIFICATION REPORT M28F102 1 Megabit 64K x 16 CMOS T5 FLASH MEMORY in TSOP40 INTRODUCTION The M28F102 is a 1 Megabit FLASH MEMORY organised as 64K x 16 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5 process which has been especially

Contextual Info: M28V841 LOW VOLTAGE 8 Megabit 1 Meg x 8, Sector Erase FLASH MEMORY PRODUCT PREVIEW SMALL SIZE PLASTIC PACKAGES TSOP40 and SO44 MEMORY ERASE in SECTORS – 16 Sectors of 64K Bytes each 3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE 100,000 PROGRAM/ERASE CYCLES per

CDIP32

Abstract: 0795 M28F102 QR121
Contextual Info: QUALIFICATION REPORT M28F102 T5-U20: 1 Mb x16 FLASH MEMORY in TSOP40, AGRATE F8 DIFFUSION LINE INTRODUCTION The M28F102 is a 1 Mb Dual Supply (5/12V) Flash memory organised as 64K bytes x 16 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5-U20 (-20% upgrade) process which

Contextual Info: M28F841 8 Megabit 1 Meg x 8, Sector Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGES TSOP40 and SO44 MEMORY ERASE in SECTORS – 16 Sectors of 64K Bytes each 5V ± 0.5V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE 100,000 PROGRAM/ERASE CYCLES per

XX20H

Abstract: I01498 A19D A13D
Contextual Info: SGS-THOMSON M28V841 LOW VOLTAGE 8 Megabit x 8, Sector Erase FLASH MEMORY PR ELIM IN A R Y DATA SMALL SIZE PLASTIC PACKAGES TSOP40 and S 0 4 4 MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE

V8-41

Contextual Info: M28F841 M28V341 SGS-1H0MS0N m CMOS 8 Megabit 1 Meg x 8, 16 x 64K Sector Erase FLASH MEMORY ADVANCE DATA SMALL SIZE TSOP40 and S 0 4 4 PLASTIC PACKAGES - Normal and Reverse Pinout for TSOP ver­ sions M EMORY ERASE in SECTORS, 16 x 64K SUPPLY VOLTAGE in READ OPERATION

Contextual Info: 5 7 . S G S -T H O M S O N [fflM iH iM M B g S M28V841 LOW VOLTAGE 8 Megabit 1 Meg x 8, Sector Erase FLASH MEMORY PRODUCT PREVIEW • SMALL SIZE PLASTIC PACKAGES TSOP40 and S044 ■ MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each ■ 3V ± 0.3V SUPPLY VOLTAGE

Contextual Info: QUALIFICATION REPORT M28F410/420, M28F411/421 4 Megabit x16 and (x8) FLASH MEMORY in SO44 and TSOP40 INTRODUCTION The M28F410/420 is a 4Megabit FLASH Memory Boot Block Dual Power Supply (5/12V) organised as 512Kx8 bits or 256Kx16 bits. The M28F411/421 is a 4 Megabit FLASH Memory Boot Block Dual Power

Contextual Info: M 28V411 M 28V421 SGS-THOMSON ^ 7 # . IH [MillLI©lS©H gS LOW VOLTAGE 4 Megabit (x 8, Block Erase FLASH MEMORY PRELIMINARY DATA • SMALL SIZE PLASTIC PACKAGE TSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo­ cation) with hardware write and erase pro­

TSOP48 Thermal

Contextual Info: QUALIFICATION REPORT M28F210/220, 2Mbit x16 and M28F211/221, 2 Megabit (x8) FLASH MEMORY in SO44, TSOP48 and TSOP40 INTRODUCTION The M28F210/220 is a 2Megabit FLASH Memory Boot Block Dual Power Supply (5/12V) organised as 256Kx8 bits or 128Kx16 bits. The M28F211/221 is a 2 Megabit FLASH Memory Boot Block Dual Power

Contextual Info: QUALIFICATION REPORT M28F102 1 Megabit 64K x 16 CMOS T5-U20 FLASH MEMORY in TSOP40 and PLCC44 INTRODUCTION The M28F102 is a 1 Megabit FLASH Memory organised as 64K x 16 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5-U20 (-20% upgrade) process which has been expecially

CDIP32

Abstract: M28F411 M28W431 QRFL9802
Contextual Info: QRFL9802 QUALIFICATION REPORT M28W431 T6-U20: 4 Mb x8 Flash Memory in TSOP40, Catania M5 Diffusion Line INTRODUCTION The M28W431 is a 4 Mb Low Voltage Dual Supply (3/12V) Boot Block Flash memory organised as 512K bytes of 8 bits each. It is manufactured with the ST Microelectronics advanced CMOS 0.6 micron T6-U20

Contextual Info: QUALIFICATION REPORT M28F410/420, M28F411/421 T6-U10: 4 Mbit x16 and (x8) FLASH MEMORY in SO44 and TSOP40 INTRODUCTION The M28F410/420 is a 4Megabit FLASH Memory Boot Block Dual Power Supply (5/12V) organised as 512Kx8 bits or 256Kx16 bits. The M28F411/421 is a 4 Megabit FLASH Memory Boot Block Dual Power

Contextual Info: SGS-THOMSON M28V841 l ll lM J i lL li M W I i e i LOW VOLTAGE 8 Megabit x 8, Sector Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGES TSOP40 and S044 MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE