TSOP SDRAM Search Results

KM416S8030BN

Abstract: KM416S8030B
Contextual Info: shrink-TSOP KM416S8030BN Preliminary CMOS SDRAM 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Aug. 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Aug. 1999 shrink-TSOP

Contextual Info: shrink-TSOP KM44S32030AN Preliminary CMOS SDRAM 128Mb SDRAM Shrink TSOP 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 April 1999 Samsung Electronics reserves the right to change products or specification without notice. REV. 0.1 Apr. 1999 shrink-TSOP

Contextual Info: shrink-TSOP KM48S16030BN Preliminary CMOS SDRAM 128Mb SDRAM Shrink TSOP 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 July 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 July 1999 shrink-TSOP

M312L5623MTS

Abstract: TSOP 173 g M312L5620MTS-CB3 m312l5623mts-cb3
Contextual Info: 2GB TSOP Registered DIMM Preliminary DDR SDRAM DDR SDRAM Registered Module TSOP-II 184pin Registered Module based on 1Gb M-die with 1,200mil Height & 72-bit ECC Revision 0.0 February 2004 Revison 0.0 February, 2004 2GB TSOP Registered DIMM Preliminary

Contextual Info: 512MB, 1GB, 2GB TSOP Registered DIMM DDR SDRAM DDR SDRAM Registered Module TSOP-II 184pin Registered Module based on 512Mb B-die with 1,700 / 1,200mil Height & 72-bit ECC Revision 1.0 December. 2003 Revison 1.0 December, 2003 512MB, 1GB, 2GB TSOP Registered DIMM

PC133 registered reference design

Contextual Info: Shrink-TSOP KMM390S6520BN Preliminary PC133 Registered DIMM Revision History Revision 0.0 July 29. 1999, Preliminary - First generation of datasheet. REV. 0.0 July. 1999 Shrink-TSOP KMM390S6520BN Preliminary PC133 Registered DIMM KMM390S6520BN SDRAM DIMM

Contextual Info: Shrink-TSOP KMM377S6520BN Preliminary 512MB Registered DIMM 512MB Registered DIMM based on 128Mb SDRAM sTSOP2 Revision 0.0 July 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 July 1999 Shrink-TSOP KMM377S6520BN

Contextual Info: Shrink-TSOP KMM464S3323BN Preliminary 144pin SDRAM SODIMM 256MB SDRAM SODIMM based on 128Mb SDRAM sTSOP Revision 0.0 July 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 July 1999 Shrink-TSOP KMM464S3323BN

TSOP 86 Package

Abstract: A11E 128MB PC266 TSOP 54 Package 4mx32 TSOP 400 86 TSOP 54 PIN tsop 66 TSOP 66 Package ddr 240 pin
Contextual Info: 1999 DRAM Design Guidelines Options Package Width Data Rate Voltage I/O 16Mb 64Mb 128Mb 256Mb Clock MHz 1 54 TSOP x4 SDR 3.3V LVTTL na 16Mx4 32Mx4 64Mx4 PC100/133 2 54 TSOP x8 SDR 3.3V LVTTL na 8Mx8 16Mx8 32Mx8 PC100/133 3 54 TSOP x16 SDR 3.3V LVTTL na 4Mx16 8Mx16 16Mx16

VCCQ15

Contextual Info: White Electronic Designs W3E64M72S-XSBX PRELIMINARY* 64Mx72 DDR SDRAM BENEFITS FEATURES Data rate = 200, 250, 266 and 333Mbs 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP

Contextual Info: White Electronic Designs W3E32M72SR-XSBX 32Mx72 REGISTERED DDR SDRAM FEATURES BENEFITS Registered for enhanced performance of bus speeds of 200, 250, 266Mb/s 74% SPACE SAVINGS vs. TSOP Package: 51% I/O reduction vs TSOP • 208 Plastic Ball Grid Array PBGA , 16 x 25mm

Contextual Info: White Electronic Designs W3DG6435V-AD1 256MB – 32Mx64 SDRAM UNBUFFERED FEATURES DESCRIPTION PC100 and PC133 compatible The W3DG6435V is a 32Mx64 synchronous DRAM module which consists of eight 32Mx8 SDRAM components in TSOP II package, and one 2Kb EEPROM in an 8 pin TSOP

Contextual Info: White Electronic Designs W3E32M72S-XBX 32Mx72 DDR SDRAM FEATURES BENEFITS Data rate = 200, 250, 266MHz 40% SPACE SAVINGS vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 32 x 25mm 34% I/O reduction vs TSOP 2.5V ±0.2V core power supply

k4h510438b

Contextual Info: 512MB, 1GB, 2GB TSOP Registered DIMM Pb-Free DDR SDRAM DDR SDRAM Registered Module 184pin Registered Module based on 512Mb B-die with 1,700 / 1,200mil Height & 72-bit ECC 66 TSOP II with Pb-Free (RoHS compliant) Revision 1.2 Oct. 2004 Revison 1.2 Oct. 2004

Contextual Info: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM BENEFITS FEATURES „ Data rate = 200, 250, 266 and 333Mbs* „ 66% Space Savings vs. TSOP „ Package: „ Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm „ 55% I/O reduction vs TSOP

Contextual Info: White Electronic Designs W3E32M72SR-XSBX ADVANCED* 32Mx72 REGISTERED DDR SDRAM FEATURES BENEFITS Registered for enhanced performance of bus speeds of 200, 250, 266Mb/s 74% SPACE SAVINGS vs. TSOP Package: 51% I/O reduction vs TSOP • 208 Plastic Ball Grid Array PBGA , 16 x 25mm

tsop 66

Abstract: W3E32M72S-XBX
Contextual Info: White Electronic Designs W3E32M72S-XBX 32Mx72 DDR SDRAM FEATURES BENEFITS Data rate = 200, 250, 266, 333Mbs 40% SPACE SAVINGS vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 32 x 25mm 34% I/O reduction vs TSOP 2.5V ±0.2V core power supply

Contextual Info: 184pin Registered DDR SDRAM DIMMs based on 512Mb C ver. TSOP This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil. TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 512Mb C ver. based Registered DIMM series provide

HYMD564M646C

Abstract: d431 DDR266 DDR266B DDR333 DDR400 DDR400B HYMD532M646C hynix ddr hynix ddr sdram
Contextual Info: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered

hynix ddr400 sdram 1Gb

Abstract: DDR200 DDR266 DDR266A DDR266B DDR333 hynix ddr hynix module suffix
Contextual Info: 184pin Registered DDR SDRAM DIMMs based on 512Mb C ver. TSOP This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil. TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 512Mb C ver. based Registered DIMM series provide

Contextual Info: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM BENEFITS FEATURES „ Data rate = 200, 250, 266 and 333Mbs* „ 66% Space Savings vs. TSOP „ Package: „ Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm „ 55% I/O reduction vs TSOP

Contextual Info: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM FEATURES BENEFITS „ Data rate = 200, 250, 266 and 333Mbs* „ 66% Space Savings vs. TSOP „ Package: „ Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm „ 55% I/O reduction vs TSOP

7812

Abstract: VCCQ15
Contextual Info: White Electronic Designs W3E32M72S-XBX ADVANCED* 32Mx72 DDR SDRAM FEATURES BENEFITS Data rate = 200, 250, 266MHz 40% SPACE SAVINGS vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 32 x 25mm 34% I/O reduction vs TSOP 2.5V ±0.2V core power supply

Contextual Info: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered