TSOP SDRAM Search Results
TSOP SDRAM Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| AM1705DPTPD4 |
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Sitara Processor: ARM9, SDRAM, Ethernet 176-HLQFP -40 to 90 |
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| AM1705DPTPA3 |
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Sitara Processor: ARM9, SDRAM, Ethernet 176-HLQFP -40 to 105 |
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| AM1705DPTP4 |
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Sitara Processor: ARM9, SDRAM, Ethernet 176-HLQFP 0 to 90 |
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| AM1705DPTP3 |
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Sitara Processor: ARM9, SDRAM, Ethernet 176-HLQFP 0 to 90 |
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| AM1707DZKBD4 |
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Sitara Processor: ARM9, SDRAM, Ethernet, Display 256-BGA -40 to 90 |
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TSOP SDRAM Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: shrink-TSOP KM44S32030AN Preliminary CMOS SDRAM 128Mb SDRAM Shrink TSOP 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 April 1999 Samsung Electronics reserves the right to change products or specification without notice. REV. 0.1 Apr. 1999 shrink-TSOP |
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KM44S32030AN 128Mb KM44S32030AT, 54-sTSOP | |
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Contextual Info: shrink-TSOP KM48S16030BN Preliminary CMOS SDRAM 128Mb SDRAM Shrink TSOP 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 July 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 July 1999 shrink-TSOP |
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KM48S16030BN 128Mb A10/AP | |
M312L5623MTS
Abstract: TSOP 173 g M312L5620MTS-CB3 m312l5623mts-cb3
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184pin 200mil 72-bit M312L5620MTS-CB3/A2/B0 M312L5623MTS-CB3/A2/B0 256Mx4( K4H1G0438M) 128Mx8( K4H1G0838M) M312L5623MTS TSOP 173 g M312L5620MTS-CB3 m312l5623mts-cb3 | |
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Contextual Info: 512MB, 1GB, 2GB TSOP Registered DIMM DDR SDRAM DDR SDRAM Registered Module TSOP-II 184pin Registered Module based on 512Mb B-die with 1,700 / 1,200mil Height & 72-bit ECC Revision 1.0 December. 2003 Revison 1.0 December, 2003 512MB, 1GB, 2GB TSOP Registered DIMM |
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512MB, 184pin 512Mb 200mil 72-bit M383L6523BTS- | |
PC133 registered reference designContextual Info: Shrink-TSOP KMM390S6520BN Preliminary PC133 Registered DIMM Revision History Revision 0.0 July 29. 1999, Preliminary - First generation of datasheet. REV. 0.0 July. 1999 Shrink-TSOP KMM390S6520BN Preliminary PC133 Registered DIMM KMM390S6520BN SDRAM DIMM |
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KMM390S6520BN PC133 KMM390S6520BN 64Mx72 32Mx4, 32Mx4 PC133 registered reference design | |
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Contextual Info: Shrink-TSOP KMM377S6520BN Preliminary 512MB Registered DIMM 512MB Registered DIMM based on 128Mb SDRAM sTSOP2 Revision 0.0 July 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 July 1999 Shrink-TSOP KMM377S6520BN |
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KMM377S6520BN 512MB 128Mb KMM377S6520BN 64Mx72 | |
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Contextual Info: Shrink-TSOP KMM464S3323BN Preliminary 144pin SDRAM SODIMM 256MB SDRAM SODIMM based on 128Mb SDRAM sTSOP Revision 0.0 July 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 July 1999 Shrink-TSOP KMM464S3323BN |
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KMM464S3323BN 144pin 256MB 128Mb KMM464S3323BN 32Mx64 | |
k4h510438bContextual Info: 512MB, 1GB, 2GB TSOP Registered DIMM Pb-Free DDR SDRAM DDR SDRAM Registered Module 184pin Registered Module based on 512Mb B-die with 1,700 / 1,200mil Height & 72-bit ECC 66 TSOP II with Pb-Free (RoHS compliant) Revision 1.2 Oct. 2004 Revison 1.2 Oct. 2004 |
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512MB, 184pin 512Mb 200mil 72-bit M383L6523BUS-CA2/B0/A0 k4h510438b | |
WED3DG6435V-D1Contextual Info: WED3DG6435V-D1 -JD1 White Electronic Designs 256MB – 32Mx64 SDRAM UNBUFFERED FEATURES DESCRIPTION The WED3DG6435V is a 32Mx64 synchronous DRAM module which consists of eight 32Mx8 SDRAM components in TSOP II package, and one 2Kb EEPROM in an 8 pin TSOP package for Serial Presence Detect which |
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WED3DG6435V-D1 256MB 32Mx64 WED3DG6435V 32Mx8 PC100 PC133 WED3DG6435V-D1 | |
tsop 66
Abstract: W3E32M72S-XBX
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W3E32M72S-XBX 32Mx72 333Mbs 333Mbs tsop 66 W3E32M72S-XBX | |
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Contextual Info: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM BENEFITS FEATURES Data rate = 200, 250, 266 and 333Mbs* 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP |
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W3E64M72S-XSBX 64Mx72 333Mbs* 512MByte 333Mbs | |
W3E64M72S-XBXContextual Info: White Electronic Designs W3E64M72S-XBX ADVANCED* 64Mx72 DDR SDRAM BENEFITS FEATURES Data rate = 200, 250, 266 and 333Mbs 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP 2.5V ±0.2V core power supply |
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W3E64M72S-XBX 64Mx72 333Mbs 512MByte W3E64M72S-ESB W3E64M72S-XBX | |
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Contextual Info: W3DG6435V-D1 -JD1 White Electronic Designs 256MB – 32Mx64 SDRAM UNBUFFERED FEATURES DESCRIPTION The W3DG6435V is a 32Mx64 synchronous DRAM module which consists of eight 32Mx8 SDRAM components in TSOP II package, and one 2Kb EEPROM in an 8 pin TSOP package for Serial Presence Detect which are mounted on |
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W3DG6435V-D1 256MB 32Mx64 W3DG6435V 32Mx8 PC100 PC133 | |
MT48LCM32B2PContextual Info: 64Mb: x32 SDRAM Features SDR SDRAM MT48LC2M32B2 – 512K x 32 x 4 Banks Features Options Marking • Configuration – 2 Meg x 32 512K x 32 x 4 banks • Plastic package – OCPL1 – 86-pin TSOP II (400 mil) standard – 86-pin TSOP II (400 mil) Pb-free |
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MT48LC2M32B2 PC100-compliant 4096-cycle 09005aef811ce1fe MT48LCM32B2P | |
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MT48LCM32B2P
Abstract: MT48LCM32B2 x32s
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MT48LC2M32B2 PC100-compliant 4096-cycle, 09005aef811ce1fe MT48LCM32B2P MT48LCM32B2 x32s | |
MT48LC2M3B2b5
Abstract: MT48LCM32B2 MT48LCM32B2P MT48LC2M3B2 MT48LCM32 SMD MARKING code tac 63 ball fbga thermal resistance micron MT48LC4M16A2B4-6A IT 64Mb SDRAM is a high-speed CMOS
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MT48LC2M32B2 PC100-compliant 4096-cycle 09005aef811ce1fe MT48LC2M3B2b5 MT48LCM32B2 MT48LCM32B2P MT48LC2M3B2 MT48LCM32 SMD MARKING code tac 63 ball fbga thermal resistance micron MT48LC4M16A2B4-6A IT 64Mb SDRAM is a high-speed CMOS | |
MT48LCM32B2
Abstract: MT48LC2M3B2
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MT48LC2M32B2 PC100-compliant 4096-cycle 09005aef811ce1fe MT48LCM32B2 MT48LC2M3B2 | |
W3E32M72SR-XSBXContextual Info: White Electronic Designs W3E32M72SR-XSBX 32Mx72 REGISTERED DDR SDRAM FEATURES BENEFITS Registered for enhanced performance of bus speeds of 200, 250, 266Mb/s 74% SPACE SAVINGS vs. TSOP Reduced part count Package: 51% I/O reduction vs TSOP • 208 Plastic Ball Grid Array PBGA , 16 x 25mm |
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W3E32M72SR-XSBX 32Mx72 266Mb/s E32M72SR-XSBX W3E32M72SR-XSBX | |
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Contextual Info: W3E32M72SR-XBX 32Mx72 REGISTERED DDR SDRAM FEATURES BENEFITS Registered for enhanced performance of bus speeds of 200, 250, 266Mb/s 74% SPACE SAVINGS vs. TSOP Package: 51% I/O reduction vs TSOP Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 25mm |
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W3E32M72SR-XBX 32Mx72 266Mb/s | |
MT48LC4M32B2P
Abstract: TP 472
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128Mb: MT48LC4M32B2 PC100-compliant 4096-cycle 09005aef80872800 MT48LC4M32B2P TP 472 | |
MT48LC4M32B2P
Abstract: marking 6a2 smd 6A 1176
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128Mb: MT48LC4M32B2 PC100-compliant 4096-cycle 09005aef80872800 MT48LC4M32B2P marking 6a2 smd 6A 1176 | |
MT48LC4M32B2P
Abstract: x32SDR
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128Mb: MT48LC4M32B2 PC100-compliant 4096-cycle 09005aef80872800 MT48LC4M32B2P x32SDR | |
MT48LC4M32B2PContextual Info: 128Mb: x32 SDRAM Features SDR SDRAM MT48LC4M32B2 – 1 Meg x 32 x 4 Banks Features Options Marking • Configuration – 4 Meg x 32 1 Meg x 32 x 4 banks • Package – OCPL1 – 86-pin TSOP II (400 mil) – 86-pin TSOP II (400 mil) Pb-free – 90-ball VFBGA (8mm x 13mm) |
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128Mb: MT48LC4M32B2 PC100-compliant 4096-cycle 09005aef80872800 MT48LC4M32B2P | |
MT48LC4M32B2PContextual Info: 128Mb: x32 SDRAM Features SDR SDRAM MT48LC4M32B2 – 1 Meg x 32 x 4 Banks Features Options Marking • Configuration – 4 Meg x 32 1 Meg x 32 x 4 banks • Package – OCPL1 – 86-pin TSOP II (400 mil) – 86-pin TSOP II (400 mil) Pb-free – 90-ball VFBGA (8mm x 13mm) |
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128Mb: MT48LC4M32B2 PC100-compliant 4096-cycle 09005aef80872800 MT48LC4M32B2P | |