TSOP II 54 PACKAGE Search Results

TSOP 54 Package

Abstract: TSOP 54 PIN 54-PIN TSOP II 54 Package
Contextual Info: THIN SMALL OUTLINE L-LEADED PACKAGE 54 PIN PLASTIC FPT-54P-M01 54-pin plastic TSOP II Lead pitch 0.80mm Package width 500mil Lead shape Gullwing Sealing method Plastic mold (FPT-54P-M01) * : Resin protrusion. (Each side : 0.15 (.006) Max) 54-pin plastic TSOP (II)

MT48LC16M8A2BB

Contextual Info: 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options • Plastic package – OCPL2 – 54-pin TSOP II 400 mil – 54-pin TSOP II (400 mil) Pb-free

MT48LC16M8A2BB

Contextual Info: 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options • Plastic package – OCPL2 – 54-pin TSOP II 400 mil – 54-pin TSOP II (400 mil) Pb-free

TSOP II 54

Abstract: TSOP II 54 Package 54PIN 54P3G-C
Contextual Info: 54P3G-C Plastic 54pin 400mil TSOP II (LOC) EIAJ Package Code TSOP II 54-P-400-0.80 Weight(g) JEDEC Code – Lead Material Alloy 42 e b2 F 54 E Recommended Mount Pad Symbol 1 A 27 D e L c L1 HE ME l2 28 y b A2 Detail F A A1 A2 b c D E e HE L L1 y A1 ME I2

TSOP 54 Package

Abstract: TSOP 54 Package used in where TSOP 54 PIN TSOP II 54 Package TSOP 54 II 54-PIN
Contextual Info: THIN SMALL OUTLINE L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 54 PIN PLASTIC To Top / Package Lineup / Package Index FPT-54P-M01 54-pin plastic TSOP II Lead pitch 0.80 mm Package width 500 mil Lead shape Gullwing Sealing method Plastic mold (FPT-54-M01)

TSOP 54 Package

Abstract: TSOP 54 Package used in where 54-PIN TSOP 54 PIN
Contextual Info: THIN SMALL OUTLINE L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 54 PIN PLASTIC To Top / Package Lineup / Package Index FPT-54P-M02 54-pin plastic TSOP II Lead pitch 0.80 mm Package width 400 mil Lead shape Gullwing Sealing method Plastic mold (FPT-54P-M02)

TSOP 86 Package

Abstract: TSOP 54 tray TSOP package tray TSOP 54 Package TSOP 54 PIN TSOP 66 Package JEDEC tray standard tsop TSOP II 54 Package tsop 66 tsop package
Contextual Info: TRAY CONTAINER UNIT : mm HEAT PROOF PRE 7 112.0 NEC 135° MAX. A' 11.8 14.00 12.00 TSOP 2 400MIL22 135.9 9¥12=108 A 24.70 21.70 21.8 271.7 315.0 (322.6) SECTION A – A' 5.62 7.62 (6.35) 21.80 16.50 Applied Package Quantity (pcs) Material 54-pin • Plastic TSOP(II)

TSOP 86 Package

Abstract: TSOP 54 tray TSOP 54 Package TSOP 66 Package TSOP II 54 Package TSOP 62 Package JEDEC tray standard tsop TSOP package tray
Contextual Info: UNIT : mm HEAT PROOF PRE 7 112.0 NEC 135° MAX. 14.00 12.00 TSOP 2 400MIL22 135.9 9x12=108 A A' 11.8 24.70 21.70 21.8 271.7 315.0 (322.6) SECTION A – A' 5.62 (6.35) 7.62 21.8 16.5 Applied Package Quantity (pcs) Material 54-pin • Plastic TSOP(II)(400mil)

Contextual Info: 512MB, 1GB Unbuffered SODIMM DDR SDRAM DDR SDRAM Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb F-die 66 TSOP-II & 54 sTSOP-II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

M470L6524FL0

Abstract: M470L2923F60
Contextual Info: 512MB, 1GB Unbuffered SODIMM DDR SDRAM DDR SDRAM Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb F-die 66 TSOP-II & 54 sTSOP-II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

K4H511638D

Abstract: M470L3324DU0
Contextual Info: 256MB, 512MB, 1GB Unbuffered SODIMM Preliminary DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

DDR400

Abstract: K4H511638B M470L3324BT
Contextual Info: 256MB, 512MB, 1GB Unbuffered SODIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die 66 TSOP-II & 54 sTSOP-II INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Contextual Info: 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb H-die 54 TSOP-II/sTSOP II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Contextual Info: 256MB, 512MB, 1GB Unbuffered SODIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Contextual Info: GMM27317230ATG LG Semicon Co.,Ltd. Description 16,777,216 WORDS x72BIT SYNCHRONOUS DYNAMIC RAM MODULE Features The GMM27317230ATG is a 16M x 72bits Synchronous Dynamic RAM MODULE which is assembled 9 pieces of 16M x 8bits Synchronous DRAMs in 54 pin TSOP II

Contextual Info: GMM26417233ATG 16,777,216 WORDS x64bit LG Semicon Co.,Ltd. Description The GMM26417233ATG is a 16M x 64bits Synchronous Dynamic RAM MODULE which is assembled 8 pieces of 16M x 8bits Synchronous DRAMs in 54 pin TSOP II package and one 2048 bit EEPROM in 8pin

Contextual Info: GMM27317233ATG 16,777,216 WORDS x72BIT LG Semicon Co.,Ltd. Description The GMM27317233ATG is a 16M x 72bits Synchronous Dynamic RAM MODULE which is assembled 9 pieces of 16M x 8bits Synchronous DRAMs in 54 pin TSOP II package and one 2048 bit EEPROM in 8pin

K4S561632J

Abstract: K4S56163 K4S561632J-UI/P60 K4S561632J-UI samsung cmos dram 4m x 4 k4s5616
Contextual Info: Industrial Synchronous DRAM K4S561632J 256Mb J-die SDRAM Specification 54 TSOP-II with Pb-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

samsung capacitance year code

Contextual Info: Industrial Synchronous DRAM K4S561632J 256Mb J-die SDRAM Specification 54 TSOP-II with Pb-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Contextual Info: DDR SDRAM 256MB, 512MB, 1GB Unbuffered SODIMM Pb-Free DDR SDRAM SODIMM 200pin Unbuffered SODIMM based on 512Mb B-die with 64 / 72-bit Non ECC / ECC 66 TSOP(II)/54 sTSOP(II) with Pb-Free (RoHS compliant) Revision 1.2 Oct. 2004 Revision 1.2 Oct. 2004 256MB, 512MB, 1GB Unbuffered SODIMM Pb-Free

K4S561632J

Abstract: m464s64* samsung K4S560832J
Contextual Info: 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb J-die 54 TSOP-II/sTSOP II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

tsop 54 weight

Abstract: 70-PIN
Contextual Info: 70P3S-L Plastic 70pin 400mil TSOP EIAJ Package Code TSOP II 70/68-P-400-0.65 Weight(g) JEDEC Code – Lead Material Alloy 42 e b2 52 54 36 E Recommended Mount Pad Symbol 17 1 19 35 A c L D L1 HE ME 70 I2 F e y b A2 Detail F A1 A A1 A2 b c D E e HE L L1

70-pin

Contextual Info: 70P3S-M Plastic 70pin 400mil TSOP EIAJ Package Code TSOP II 70/68-P-400-0.65 Weight(g) JEDEC Code – Lead Material Alloy 42 e b2 1 17 35 Recommended Mount Pad E Symbol 54 70 52 36 A c L D L1 HE ME 19 I2 F e y b A2 Detail F A1 A A1 A2 b c D E e HE L L1

EDS2516APTA-75TI-E

Abstract: EDS2516APTA-TI-E
Contextual Info: DATA SHEET 256M bits SDRAM WTR Wide Temperature Range EDS2516APTA-TI-E (16M words x 16 bits) Specifications Pin Configurations • Density: 256M bits • Organization ⎯ 4M words × 16 bits × 4 banks • Package: 54-pin plastic TSOP (II) ⎯ Lead-free (RoHS compliant)