TSOP 48 THERMAL RESISTANCE JUNCTION TO CASE Search Results

QFP160-P-2828-0

Abstract: QFP304 TSOP 66 pin Package thermal resistance TSOP 48 thermal resistance bga 208 PACKAGE QFJ32-P-R450-1 SDIP64-P-750-1 SOJ28-P-400-1 QFP208-P-2828-0 TSOP 48 thermal resistance junction to case
Contextual Info: This version: Apr. 2001 Previous version:Jun. 1997 PACKAGE INFORMATION 5. THERMAL-RESISTANCE OF IC PACKAGE This document is Chapter 5 of the package information document consisting of 8 chapters in total. PACKAGE INFORMATION 5. THERMAL-RESISTANCE OF IC PACKAGE

Contextual Info: NTGS5120P, NVGS5120P Power MOSFET −60 V, −2.9 A, Single P−Channel, TSOP−6 Features • 60 V BVds, Low RDS on in TSOP−6 Package • 4.5 V Gate Rating • NV Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and

Contextual Info: NUD3048 FET Switch 100 V, 800 mW, N−Channel, TSOP−6 The NUD3048 provides a single device solution for a number of applications requiring a low power, high voltage, FET switch. The package includes a gate resistor and gate to source zener clamp. This switch can accommodate a wide range of input voltages, making it

MOTOROLA OPTOELECTRONIC

Abstract: MGSF3441VT1 MGSF3441XT1 MGSF3442VT1 MGSF3442XT1 MGSF3454VT1 MGSF3454XT1 MGSF3455VT1 MGSF3455XT1 305 Power Mosfet MOTOROLA
Contextual Info: APRIL 1997 BR1491/D TSOP–6 SO–8 MICRO–8 OPTOELECTRONIC & SIGNAL PRODUCTS DIVISION Small components. Big solutions. 5005 East McDowell Road S Phoenix, AZ 85008 http://sps.mot.com/ospd TSOP–6 Selector Guide Maximum Ratings RDS on (W) Part Number VDS (V)

CY62157DV30

Abstract: CY62158DV30 CY62158DV30L CY62158DV30L-45BVI CY62158DV30LL TSOP 48 thermal resistance junction to case
Contextual Info: CY62158DV30 MoBL 8-Mbit 1024K x 8 MoBL Static RAM This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption. The device can be put into

CY62158DV30LL-70BVI

Abstract: CY62158DV30LL-55ZSXI CY62157DV30 CY62158DV30 CY62158DV30L CY62158DV30L-45BVI CY62158DV30LL
Contextual Info: CY62158DV30 MoBL 8-Mbit 1024K x 8 MoBL Static RAM This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption. The device can be put into

NUD3048

Abstract: NUD3048MT1 FET MARKING TSOP6 Marking Code 17
Contextual Info: NUD3048 FET Switch 100 V, 800 mW, N−Channel, TSOP−6 The NUD3048 provides a single device solution for a number of applications requiring a low power, high voltage, FET switch. The package includes a gate resistor and gate to source zener clamp. This switch can accommodate a wide range of input voltages, making it

27934

Contextual Info: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K × 16 nvSRAM 1-Mbit (128 K × 8/64 K × 16) nvSRAM Features • Packages ❐ 32-pin small-outline integrated circuit (SOIC) ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-pin shrink small-outline package (SSOP)

CY62167DV30LL-70ZXI

Abstract: 2057-01 Z48A BV48
Contextual Info: CY62167DV30 MoBL 16-Mbit 1M x 16 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are

Contextual Info: NTGS5120P Power MOSFET −60 V, −2.9 A, Single P−Channel, TSOP−6 Features • 60 V BVds, Low RDS on in TSOP−6 Package • 4.5 V Gate Rating • This is a Pb−Free Device http://onsemi.com Applications V(BR)DSS • High Side Load Switch • Power Switch for Printers, Communication Equipment

NTGS5120PT1G

Contextual Info: NTGS5120P Power MOSFET −60 V, −2.9 A, Single P−Channel, TSOP−6 Features • 60 V BVds, Low RDS on in TSOP−6 Package • 4.5 V Gate Rating • This is a Pb−Free Device http://onsemi.com Applications V(BR)DSS • High Side Load Switch • Power Switch for Printers, Communication Equipment

Contextual Info: PRELIMINARY CY14B104L/CY14B104N 4-Mbit 512K x 8/256K x 16 nvSRAM Feature Functional Description • 15 ns, 25 ns, and 45 ns access times • Internally organized as 512K x 8 or 256K x 16 • Hands-off automatic STORE on power down with only a small capacitor

TSOP 54 Package

Abstract: TSOP 48 thermal resistance TSOP 54 PIN TSOP 54 Package used in where TSOP II 54 TSOP II 54 Package
Contextual Info: PRELIMINARY CY14B104L/CY14B104N 4-Mbit 512K x 8/256K x 16 nvSRAM Feature Functional Description • 15 ns, 25 ns, and 45 ns access times • Internally organized as 512K x 8 or 256K x 16 • Hands-off automatic STORE on power down with only a small capacitor

TSOP II 54

Abstract: TSOP 48 thermal resistance junction to case TSOP 48 thermal resistance TSOP 54 thermal resistance
Contextual Info: PRELIMINARY CY14B104L, CY14B104N 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off automatic STORE on power down with only a small

TSOP 54 PIN

Abstract: TSOP 54 Package CY14B104L CY14B104N
Contextual Info: PRELIMINARY CY14B104L, CY14B104N 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off automatic STORE on power down with only a small

TSOP 54 Package used in where

Abstract: 54-pin TSOP thermal resistance junction to case TSOP 54 thermal resistance CY7C1069BV33 CY7C1069BV33-10ZC CY7C1069BV33-10ZI CY7C1069BV33-10ZXC SRAM 54-PIN TSOP
Contextual Info: CY7C1069BV33 16-Mbit 2M x 8 Static RAM Features Functional Description • High speed The CY7C1069BV33 is a high-performance CMOS Static RAM organized as 2,097,152 words by 8 bits. Writing to the device is accomplished by enabling the chip (by taking CE

TSOP 54 thermal resistance

Abstract: CY7C1069BV33-10ZI SRAM 54-PIN CY7C1069BV33 CY7C1069BV33-10ZC CY7C1069BV33-10ZXC TSOP 54 Package used in where TSOP 48 thermal resistance
Contextual Info: CY7C1069BV33 16-Mbit 2M x 8 Static RAM Features Functional Description • High speed The CY7C1069BV33 is a high-performance CMOS Static RAM organized as 2,097,152 words by 8 bits. Writing to the device is accomplished by enabling the chip (by taking CE

NUD3048

Abstract: NUD3048MT1 NUD3048MT1G TSOP6 Marking Code 17
Contextual Info: NUD3048 FET Switch 100 V, 800 mW, N−Channel, TSOP−6 The NUD3048 provides a single device solution for a number of applications requiring a low power, high voltage, FET switch. The package includes a gate resistor and gate to source zener clamp. This switch can accommodate a wide range of input voltages, making it

Contextual Info: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K × 16 nvSRAM 1-Mbit (128 K × 8/64 K × 16) nvSRAM Features • Packages ❐ 32-pin small-outline integrated circuit (SOIC) ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-pin shrink small-outline package (SSOP)

7688 memory chip

Abstract: CY62157EV30 CY62158DV30 CY62158EV30LL CY62158EV30LL-45BVXI CY62158EV30LL-45ZSXI CY62158E CY62157
Contextual Info: CY62158EV30 MoBL 8-Mbit 1024K x 8 Static RAM Functional Description [2] Features • Very high speed: 45 ns The CY62158EV30 is a high performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra low active current.

CY62157EV

Contextual Info: CY62158EV30 MoBL 8-Mbit 1024K x 8 Static RAM Functional Description[2] Features • Very high speed: 45 ns The CY62158EV30 is a high-performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra-low active current.

SRAM 54-PIN TSOP

Contextual Info: PRELIMINARY CY14B104L/CY14B104N 4-Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns and 25 ns access times • Internally organized as 512K x 8 or 256K x 16 • Hands-off automatic STORE on power down with only a small capacitor • STORE to QuantumTrap nonvolatile elements is initiated

CY62157EV30

Abstract: CY62157EV30 MoBL CY62158DV30 CY62158EV30LL CY62158EV30LL-45BVXI CY62158EV30LL-45ZSXI
Contextual Info: CY62158EV30 MoBL 8-Mbit 1024K x 8 Static RAM Functional Description [2] Features • Very high speed: 45 ns The CY62158EV30 is a high performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra low active current.

NUD3048

Abstract: NUD3048MT1 NUD3048MT1G
Contextual Info: NUD3048 FET Switch 100 V, 800 mW, N−Channel, TSOP−6 The NUD3048 provides a single device solution for a number of applications requiring a low power, high voltage, FET switch. The package includes a gate resistor and gate to source zener clamp. This switch can accommodate a wide range of input voltages, making it