TSM160 Search Results
TSM160 Datasheets (6)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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TSM160N10CZ C0G |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 160A TO220 | Original | 455.04KB | |||
TSM160N10LCR |
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100V, 46A, SINGLE N-CHANNEL POWE | Original | 310.12KB | 6 | ||
TSM160N10LCR RLG |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 46A 8PDFN | Original | 288.24KB | |||
TSM160P02CS |
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-20, -11, SINGLE P-CHANNEL | Original | 410.95KB | 7 | ||
TSM160P02CS RLG |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHANNEL 20V 11A 8SOP | Original | 299.22KB | |||
TSM160P04LCRHRLG |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 40V 51A 8PDFN | Original | 276.77KB |
TSM160 Price and Stock
Taiwan Semiconductor TSM160N10LCR-RLGMOSFET N-CH 100V 46A 8PDFN |
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TSM160N10LCR-RLG | Cut Tape | 10,281 | 1 |
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Taiwan Semiconductor TSM160P02CS-RLGMOSFET P-CHANNEL 20V 11A 8SOP |
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TSM160P02CS-RLG | Digi-Reel | 5,122 | 1 |
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Taiwan Semiconductor TSM160N10CZ-C0GMOSFET N-CH 100V 160A TO220 |
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TSM160N10CZ-C0G | Tube | 7 | 1 |
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Taiwan Semiconductor TSM160P02CS-20, -11, SINGLE P-CHANNEL |
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TSM160P02CS | Reel | 5,000 |
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Taiwan Semiconductor TSM160N10LCR100V, 46A, SINGLE N-CHANNEL POWE |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSM160N10LCR | Reel | 5,000 |
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TSM160 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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TSM160N10Contextual Info: TSM160N10 100V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS V RDS(on)(mΩ) ID (A) 100 5.5 @ VGS =10V 160 Block Diagram Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.) |
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TSM160N10 O-220 154nC 300pF TSM160N10CZ 50pcs TSM160N10 | |
TSM160N10Contextual Info: TSM160N10 100V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS V RDS(on)(mΩ) ID (A) 100 5.5 @ VGS =10V 160 Block Diagram Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.) |
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TSM160N10 O-220 154nC 300pF TSM160N10CZ 50pcs TSM160N10 | |
Contextual Info: TSM160N10 100V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS V RDS(on)(mΩ)(max) ID (A) 100 5.5 @ VGS =10V 160 Block Diagram Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.) |
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TSM160N10 O-220 154nC 300pF TSM160N10CZ 50pcs Alex121123 | |
Contextual Info: TSM160N10 100V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS V RDS(on)(mΩ) ID (A) 100 5.5 @ VGS =10V 160 Block Diagram Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.) |
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TSM160N10 O-220 154nC 260pF 50pcs TSM160N10CZ 70rty | |
TME 87
Abstract: tme 126 TSM30 TA40B TSM250 TSM12 tsm1000 TSM160 230 94 C TSM100
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OCR Scan |
Lll-06pa3H0M 060pyfl0BaHMH 6e30nacH0CTM 3neKTp03HepreTMKM. TSM30 TSM50 TSM60 TSM80 TSM100 TSM120 TME 87 tme 126 TA40B TSM250 TSM12 tsm1000 TSM160 230 94 C |