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    MENDA W4015-4NC

    Desoldering Braid / Solder Removal CASSETTE WITH #4, .100" x 15' ONE STEP REPLACEMENT NO-CLEAN BRAID WICK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics W4015-4NC
    • 1 $13.03
    • 10 $11.15
    • 100 $10.06
    • 1000 $9.36
    • 10000 $9.36
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    Easy Braid Co W4015-4NC

    Wick Cassette, 15Ft X 0.11", Copper; Braid Material:Oxide Free Copper; Width:0.11"; Length:15Ft; Product Range:1000 Wickgun Series Rohs Compliant: Na |Easybraid W4015-4NC
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    Newark W4015-4NC Bulk 1
    • 1 $9.94
    • 10 $9.94
    • 100 $9.94
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    IXYS Corporation IXFH180N20X3

    MOSFETs TO247 200V 180A N-CH X3CLASS
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    TTI IXFH180N20X3 Tube 240 30
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    • 100 $15.58
    • 1000 $13.26
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    Vishay Intertechnologies SISS61DN-T1-GE3

    MOSFETs Pch 20V Vds 8V Vgs PowerPAK 1212-8S
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    TTI SISS61DN-T1-GE3 Reel 6,000
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    • 10000 $0.52
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    IXYS Corporation IXFT180N20X3HV

    MOSFETs TO268 200V 180A N-CH X3CLASS
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    TTI IXFT180N20X3HV Tube 30
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    • 100 $14.33
    • 1000 $14.33
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    154NC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TSM85N10 100V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features VDS V RDS(on)(mΩ) ID (A) 100 10 @ VGS =10V 81 Block Diagram ● Advanced Trench Technology ● Low RDS(ON) 10mΩ (Max.) ● Low gate charge typical @ 154nC (Typ.)


    Original     		tsm85n10o-220154nc170pf+2tsm85n10cz50pcs PDF

    TSM160N10

    Contextual Info: TSM160N10 100V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS V RDS(on)(mΩ) ID (A) 100 5.5 @ VGS =10V 160 Block Diagram Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.)


    Original     		tsm160n10o-220154nc300pf+2tsm160n10cz50pcs PDF

    TSM160N10

    Contextual Info: TSM160N10 100V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS V RDS(on)(mΩ) ID (A) 100 5.5 @ VGS =10V 160 Block Diagram Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.)


    Original     		tsm160n10o-220154nc300pf+2tsm160n10cz50pcs PDF

    Contextual Info: TSM160N10 100V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS V RDS(on)(mΩ)(max) ID (A) 100 5.5 @ VGS =10V 160 Block Diagram Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.)


    Original     		tsm160n10o-220154nc300pf+3tsm160n10cz50pcsalex121123 PDF

    Contextual Info: TSM160N10 100V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS V RDS(on)(mΩ) ID (A) 100 5.5 @ VGS =10V 160 Block Diagram Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.)


    Original     		tsm160n10o-220154nc260pf+350pcstsm160n10cz70rty PDF