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Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TSM160N10 100V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS V RDS(on)(mΩ)(max) ID (A) 100 5.5 @ VGS =10V 160 Block Diagram Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.) |
Original |
TSM160N10 O-220 154nC 300pF TSM160N10CZ 50pcs Alex121123 |