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    TSM160N10 Search Results

    TSM160N10 Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TSM160N10CZ C0G
    Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 160A TO220 Original PDF 455.04KB
    TSM160N10LCR
    Taiwan Semiconductor 100V, 46A, SINGLE N-CHANNEL POWE Original PDF 310.12KB 6
    TSM160N10LCR RLG
    Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 46A 8PDFN Original PDF 288.24KB
    SF Impression Pixel

    TSM160N10 Price and Stock

    Taiwan Semiconductor

    Taiwan Semiconductor TSM160N10LCR RLG

    MOSFETs 100V, 46A, Single N-Channel Power MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics () TSM160N10LCR RLG 2,578
    • 1 $2.02
    • 10 $1.40
    • 100 $1.08
    • 1000 $0.83
    • 10000 $0.69
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    TSM160N10LCR RLG 2,578
    • 1 $2.02
    • 10 $1.40
    • 100 $1.08
    • 1000 $0.83
    • 10000 $0.69
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    Verical TSM160N10LCR RLG 5,000 2,500
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    • 10000 $0.95
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    Taiwan Semiconductor TSM160N10CZ

    MOSFETs Power MOSFET, N-CHAN 100V, 160A, 5.5mOhm
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    Mouser Electronics () TSM160N10CZ
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    TSM160N10CZ
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    Taiwan Semiconductor TSM160N10CZ C0G

    Trans MOSFET N-CH 100V 14.2A 3-Pin(3+Tab) TO-220 Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical TSM160N10CZ C0G 120 107
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    TSM160N10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TSM160N10

    Contextual Info: TSM160N10 100V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS V RDS(on)(mΩ) ID (A) 100 5.5 @ VGS =10V 160 Block Diagram Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.)


    Original
    TSM160N10 O-220 154nC 300pF TSM160N10CZ 50pcs TSM160N10 PDF

    TSM160N10

    Contextual Info: TSM160N10 100V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS V RDS(on)(mΩ) ID (A) 100 5.5 @ VGS =10V 160 Block Diagram Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.)


    Original
    TSM160N10 O-220 154nC 300pF TSM160N10CZ 50pcs TSM160N10 PDF

    Contextual Info: TSM160N10 100V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS V RDS(on)(mΩ)(max) ID (A) 100 5.5 @ VGS =10V 160 Block Diagram Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.)


    Original
    TSM160N10 O-220 154nC 300pF TSM160N10CZ 50pcs Alex121123 PDF

    Contextual Info: TSM160N10 100V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS V RDS(on)(mΩ) ID (A) 100 5.5 @ VGS =10V 160 Block Diagram Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.)


    Original
    TSM160N10 O-220 154nC 260pF 50pcs TSM160N10CZ 70rty PDF