TSM160N10CZ Search Results
TSM160N10CZ Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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TSM160N10CZ C0G |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 160A TO220 | Original | 455.04KB |
TSM160N10CZ Price and Stock
Taiwan Semiconductor TSM160N10CZ-C0GMOSFET N-CH 100V 160A TO220 |
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TSM160N10CZ-C0G | Tube | 7 | 1 |
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Taiwan Semiconductor TSM160N10CZ C0G- Rail/Tube (Alt: TSM160N10CZ C0G) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSM160N10CZ C0G | Tube | 4,000 |
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TSM160N10CZ C0G | 120 | 107 |
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TSM160N10CZ C0G | 120 | 107 |
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Taiwan Semiconductor TSM160N10CZMOSFETs Power MOSFET, N-CHAN 100V, 160A, 5.5mOhm |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSM160N10CZ |
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TSM160N10CZ Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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TSM160N10Contextual Info: TSM160N10 100V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS V RDS(on)(mΩ) ID (A) 100 5.5 @ VGS =10V 160 Block Diagram Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.) |
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TSM160N10 O-220 154nC 300pF TSM160N10CZ 50pcs TSM160N10 | |
TSM160N10Contextual Info: TSM160N10 100V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS V RDS(on)(mΩ) ID (A) 100 5.5 @ VGS =10V 160 Block Diagram Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.) |
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TSM160N10 O-220 154nC 300pF TSM160N10CZ 50pcs TSM160N10 | |
Contextual Info: TSM160N10 100V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS V RDS(on)(mΩ)(max) ID (A) 100 5.5 @ VGS =10V 160 Block Diagram Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.) |
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TSM160N10 O-220 154nC 300pF TSM160N10CZ 50pcs Alex121123 | |
Contextual Info: TSM160N10 100V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS V RDS(on)(mΩ) ID (A) 100 5.5 @ VGS =10V 160 Block Diagram Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.) |
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TSM160N10 O-220 154nC 260pF 50pcs TSM160N10CZ 70rty |