TSC 429 Search Results
TSC 429 Price and Stock
Crydom Inc TSC429MJA/883CINTEGRATED CIRCUIT |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSC429MJA/883C | 135 |
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TSC 429 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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chn 4558 c
Abstract: temic 0675 d4 temic 0675 temic 0675 d6 chn 4558 TFK U 3212 M TFK 626 E 1024 TFK 839 str f 6456 diagram Tfk 821
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80251A1 TSC80251A1 chn 4558 c temic 0675 d4 temic 0675 temic 0675 d6 chn 4558 TFK U 3212 M TFK 626 E 1024 TFK 839 str f 6456 diagram Tfk 821 | |
6N6 datasheet
Abstract: SE 110 AN-994 IRGBC30K-S IRGBC30M-S
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IRG4BC30K-SPbF AN-994. 6N6 datasheet SE 110 AN-994 IRGBC30K-S IRGBC30M-S | |
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Contextual Info: PD -95891 IRG4BH20K-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs @ VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high |
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IRG4BH20K-SPbF EIA-418. | |
AN-994Contextual Info: PD -95891 IRG4BH20K-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs @ VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high |
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IRG4BH20K-SPbF EIA-418. AN-994 | |
tsc 429
Abstract: AN-994
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PD-95891A IRG4BH20K-SPbF EIA-418. tsc 429 AN-994 | |
AN-994
Abstract: IRGBC30K-S IRGBC30M-S
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5785A IRG4BC30K-SPbF AN-994. AN-994 IRGBC30K-S IRGBC30M-S | |
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Contextual Info: PD-95891A IRG4BH20K-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs @ VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high |
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PD-95891A IRG4BH20K-SPbF EIA-418. | |
AN-994
Abstract: high current igbt
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IRG4BH20K-SPbF hi178) EIA-418. AN-994 high current igbt | |
AN-994
Abstract: IRGBC30K-S IRGBC30M-S
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IRG4BC30K-SPbF AN-994. AN-994 IRGBC30K-S IRGBC30M-S | |
AN-994
Abstract: IRG4BC30K-S IRGBC30K-S IRGBC30M-S
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IRG4BC30K-S AN-994 IRG4BC30K-S IRGBC30K-S IRGBC30M-S | |
AN-994
Abstract: IRG4BC20K-S IRGBC20K-S IRGBC20M-S
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IRG4BC20K-S AN-994 IRG4BC20K-S IRGBC20K-S IRGBC20M-S | |
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Contextual Info: IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C IC = 10A, TC = 100°C G tsc > 5µs, Tjmax = 175°C E VCE on typ. = 1.7V @ 6A n-channel Applications • Appliance Drives • Inverters |
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IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF JESD47F) O-220 | |
AN-994
Abstract: IRGBC20K-S IRGBC20M-S
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IRG4BC20K-SPbF IRGBC20( EIA-418. AN-994 IRGBC20K-S IRGBC20M-S | |
AN-994
Abstract: IRGBC20K-S IRGBC20M-S
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IRG4BC20K-SPbF IRGBC20 EIA-418. AN-994 IRGBC20K-S IRGBC20M-S | |
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transistor model h1a
Abstract: IRGS4045D irgs4045 JESD-47 lm 230 wf1 JESD47F
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IRGS4045DPbF capabilityC-Q101-005 transistor model h1a IRGS4045D irgs4045 JESD-47 lm 230 wf1 JESD47F | |
AN-994
Abstract: IRGBC30KD2-S IRGBC30MD2-S
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IRG4BC30KD-SPbF EIA-418. AN-994 IRGBC30KD2-S IRGBC30MD2-S | |
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Contextual Info: IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C C IC = 7.0A, TC =100°C E G tSC 5µs, TJ max = 175°C G E VCE(ON) typ. = 1.75V @ IC = 4.0A IRGR4607DPbF D-Pak n-channel |
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IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF O-220AB O-220 250uAâ 100uAâ | |
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Contextual Info: PD -95674A IRG4BC30KD-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V Combines low conduction losses with high switching |
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-95674A IRG4BC30KD-SPbF IG957) EIA-418. | |
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Contextual Info: IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C C IC = 7.0A, TC =100°C E G tSC 5µs, TJ max = 175°C C G G E VCE(ON) typ. = 1.75V @ IC = 4.0A n-channel Applications |
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IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF O-220AB IRGR/S/B4607DPbF JESD47F) O-220 | |
IRGS4715DContextual Info: IRGB4715DPbF IRGS4715DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C C IC = 15A, TC =100°C tSC 5.5µs, TJ max = 175°C G VCE(ON) typ. = 1.7V @ IC = 8A G E • Industrial Motor Drive • UPS • Solar Inverters |
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IRGB4715DPbF IRGS4715DPbF IRGB4715DPbFÂ 220ABÂ IRGS4715DPbFÂ JESD47F) O-220 IRGS4715D | |
AN-994
Abstract: IRGBC30KD2-S IRGBC30MD2-S
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IRG4BC30KD-SPbF EIA-418. AN-994 IRGBC30KD2-S IRGBC30MD2-S | |
AN-994
Abstract: IRGBC30KD2-S IRGBC30MD2-S
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-95674A IRG4BC30KD-SPbF Minimized57) EIA-418. AN-994 IRGBC30KD2-S IRGBC30MD2-S | |
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Contextual Info: IRGS4620DPbF IRGB4620DPbF IRGP4620D -E PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C G G IC = 20A, TC =100°C G tSC ≥ 5µs, TJ(max) = 175°C C G E VCE(ON) typ. = 1.55V @ IC = 12A n-channel Applications • Appliance Drive |
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IRGS4620DPbF IRGB4620DPbF IRGP4620D IRGP4620DPbF O-247AC O-220AC IRGP4620D-EPbF O-247AD | |
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Contextual Info: IRGS4630DPbF IRGB4630DPbF IRGP4630D -E PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C G G IC = 30A, TC =100°C G tSC ≥ 5µs, TJ(max) = 175°C C G E VCE(ON) typ. = 1.65V @ IC = 18A n-channel Applications • Appliance Drives |
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IRGS4630DPbF IRGB4630DPbF IRGP4630D IRGP4630DPbF O-247AC IRGP4630D-EPbF O-247AD O-220AC | |