TRL1 Search Results
TRL1 Price and Stock
Banner Engineering Corp BWA-SOLAR CNTRL-12VSpecialty Controllers Solar Controller: 6 A Load Current 12 V System Voltage; Recommended for 20 watts or less Solar Panel; and Sealed Lead Acid Battery (SLA) | 
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Eaton Corporation HT8GTRL1Industrial Panel Mount Indicators / Switch Indicators PUSH-TO-TEST Indic LGT 120V FV INC&AMB | 
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HT8GTRL1 | 
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Eaton Corporation XBMTRL110Terminal Block Tools & Accessories A 200M4CB | 
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Eaton Corporation NTRL-16-40Specialty Fuses UNSWITCHED NEUTRAL UL508 16-40A | 
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TE Connectivity 2213362-2Lighting Connectors Dimming Photocell Recpt Assy 3/4 150 C | 
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2213362-2 | Bulk | 990 | 1 | 
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TRL1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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ieee802.11bContextual Info: CGB 240B Datasheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The CGB240B GaAs power amplifier MMIC has been especially developed for wireless LAN applications in the 2.4 - 2.5 GHz ISM band, compliant with IEEE 802.11b standards. The chip is also fully compliant with Bluetooth  | 
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CGB240B 22dBm, -33dB IEEE802 ieee802.11b | |
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 Contextual Info: GaAs MMIC CGB240B Preliminary Data Sheet • 2-stage InGaP HBT power amplifier for WLAN and Bluetooth applications • ACPR / IP3 tested to be compliant with IEEE802.11b standard • Fully compliant with Bluetooth requirements dual-mode use • Single voltage supply  | 
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CGB240B IEEE802 CGB240B BluetooCGB240B P-TSSOP-10-2 TSSOP10 Version01 J-STD-033 | |
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 Contextual Info: CGB 240 Datasheet 2-Stage Bluetooth InGaP HBT Power Amplifier Description: Applications: • Bluetooth Class 1 The CGB240 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band e.g. Bluetooth class 1 . Its  | 
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CGB240 IEEE802 | |
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 Contextual Info: M O SEL V IT E L IC V53C8258L UL TRA-HIGH SPEED, 3.3 VOLT256K X 8 BIT EDO PAGE MODE CMOS DYNAMIC RAM PR&BMBBOtt HIGH PERFORMANCE 60 Max. RAS Access Time, tRAC 60 ns Max. Column Address Access Time, (t^M ) 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC)  | 
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V53C8258L VOLT256K Interval--512 28-pin | |
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 Contextual Info: TR3006HS • Designed for Short-Range Wireless Data Communications • Supports RF Data Transmission Rates Up to 115.2 kbps • 3 V, Low Current Operation plus Sleep Mode • Stable, Easy to Use, Low External Parts Count • Complies with Directive 2002/95/EC RoHS  | 
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TR3006HS 2002/95/EC TR3006HS stabl065 TR1006HS | |
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 Contextual Info: in te i’ 51C256L LOW POWER 256K X 1 CHMOS DYNAMIC RAM 51C256L-15 51C256L-20 Maximum Access Time ns 150 200 Maximum CHMOS Standby Current (mA) 0.1 0.1 • Low Power Data Retention ■ TTL and HCT Compatible — Standby current, CHMOS — 100 ¡¡A (max.)  | 
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51C256L 51C256L-15 51C256L-20 51C256L S1C256L | |
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 Contextual Info: P U E L M M A m in t e i C 1P O C Q L LOW POWER 64Kx4 CHMOS DYNAMIC RAM 51C259L-12 120 0.1 Maximum Access Time ns Maximum CHMOS Standby Current (mA) 51C259L-15 150 51C259L-20 200 0.1 0.1 • TTL And HC Compatible Low Power Data Retention - Standby current, CHMOS — 100 /iA  | 
 OCR Scan  | 
64Kx4 51C259L-12 51C259L-15 51C259L-20 51C259L 51C259L | |
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 Contextual Info: in t e l 5 1 C259HL HIGH PERFORMANCE LOW POWER STATIC COLUMN 64K x 4 CHMOS DYNAMIC RAM 5 1 C 2 5 9 H L -1 5 5 1 C 2 5 9 H L -2 0 150 Maximum Access Time ns 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHM OS Standby Current (mA) 0.1 0.1 Static Column Mode Operation  | 
 OCR Scan  | 
C259HL 51C259HL | |
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 Contextual Info: in te i’ 51C256HL HIGH PERFORMANCE LOW POWER RIPPLEMODE 256K X 1 CHMOS DYNAMIC RAM 51C256HL-15 51C256HL-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHtyOS Standby Current (mA) 0.1 0.1 Ripplemode Operation  | 
 OCR Scan  | 
51C256HL 51C256HL-15 51C256HL-20 | |
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 Contextual Info: irrte1* M51C256H HIGH PERFORMANCE RIPPLEMODETm 256K x 1 CHMOS DYNAMIC RAM M ilita ry M51C256H-15 M51C256H-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 High Reliability Ceramic— 16 Pin DIP Ripplem ode Operation — Continuous Data Rate over 12 MHz  | 
 OCR Scan  | 
M51C256H M51C256H-15 M51C256H-20 M51C256H | |
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 Contextual Info: in te T 51C256HL HIGH PERFORMANCE LOW POWER RIPPLEMODE 256K X 1 CHMOS DYNAMIC RAM 51C256HL-15 51C256HL-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHMOS Standby Current (mA) 0.1 0.1 Ripplemode Operation Low Power Data Retention  | 
 OCR Scan  | 
51C256HL 51C256HL-15 51C256HL-20 51C256HL | |
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 Contextual Info: P ^ E U iÄ M 8 Y ir r t e T 51C258Lt LOW POWER 64K x 4 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum CHMOS Standby Currant (mA) 51C258L-12 120 0.1 • Low Power Data Retention - Standby current, CHMOS — 100 pA (max.) - Refresh period, RAS-Only — 32 ms  | 
 OCR Scan  | 
51C258Lt 51C258L-12 51C258L-15 51C258L 51C258L | |
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 Contextual Info: IF^iyßälDKlÄl^f i n t e i s i rO K Q I LOW POWER 64K x 4 CHMOS DYNAMIC RAM 5 1 C 2 59 L -1 S 5 1 C 2 5 9 L -2 0 Maximum Access Time ns 15 0 20 0 Maximum CHMOS Standby Current (mA) 0.1 0.1 Low Power Data Retention - Standby current, CHMOS 10O/xA (max.) _  | 
 OCR Scan  | 
10O/xA 230/xA 51C259L | |
TR8001
Abstract: 2506033017YO TR1001 transceiver RFM 
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TR8001 TR8001 SM3-20H TR8000-08172007 2506033017YO TR1001 transceiver RFM | |
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SST65P542RContextual Info: Remote Controller MCU SST65P542R SST65P542RMicrocontroller Advance Information FEATURES: • 8-bit MCU Core – Enhanced 6502 Microprocessor Megacell emulating the reduced 6805 instruction set • 4 MHz Typical Oscillator Clock Frequency • 8 MHz Maximum Oscillator Clock Frequency  | 
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SST65P542R SST65P542RMicrocontroller MS-013 28-LEAD S71170-03-000 SST65P542R | |
YDA158
Abstract: YDA158-PZ MONAURAL 2.6W Non-Clip DIGITAL AUDIO POWER AMPLIFIER YDA158-QZ classd audio amplifier yamaha yamaha audio power amp circuits PD25 PD85 QFN32 
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YDA158 YDA158 LSI-4DA158A20 YDA158-PZ MONAURAL 2.6W Non-Clip DIGITAL AUDIO POWER AMPLIFIER YDA158-QZ classd audio amplifier yamaha yamaha audio power amp circuits PD25 PD85 QFN32 | |
EPD3330
Abstract: 614k EM65168 SEG80 
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EPD3330 EPD3330 614k EM65168 SEG80 | |
MSTAR
Abstract: 07K75 tr2c sge1 amd elan ePS6610 SEG22 SEG23 7815 AA 
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ePS6610 MSTAR 07K75 tr2c sge1 amd elan ePS6610 SEG22 SEG23 7815 AA | |
elcon b 10k resistor
Abstract: elan touch stylus EPH3600 tr2c 614k 0X00 elan touch pad elcon b 100k resistor D2089 
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EPH3600 elcon b 10k resistor elan touch stylus EPH3600 tr2c 614k 0X00 elan touch pad elcon b 100k resistor D2089 | |
bq 8050
Abstract: 614k R33h 1838 ir receiver SE 7889 ic 8050 
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ePG3231 ma100 QFP-128L QFP128 POD-035 ePG3231 bq 8050 614k R33h 1838 ir receiver SE 7889 ic 8050 | |
UDA1380
Abstract: UDA1380TT HVQFN32 TSSOP32 UDA1380HN SDC31 uda1380 board 
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UDA1380 R30/04/pp68 UDA1380 UDA1380TT HVQFN32 TSSOP32 UDA1380HN SDC31 uda1380 board | |
NC-206 32.768kHz
Abstract: EPD8000 QFP208 lvdi q elcon 233082 
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EPD8000 NC-206 32.768kHz EPD8000 QFP208 lvdi q elcon 233082 | |
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 Contextual Info: RTL8110S-32/RTL8110S-64 INTEGRATED GIGABIT ETHERNET CONTROLLER LOM DATASHEET Rev. 1.7 12 August 2004 Track ID: JATR-1076-21 RTL8110S-32/RTL8110S-64 Datasheet COPYRIGHT 2004 Realtek Semiconductor Corp. All rights reserved. No part of this document may be reproduced,  | 
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RTL8110S-32/RTL8110S-64 JATR-1076-21 233-Pin RTL8110S-32 RTL8110S-64 | |
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 Contextual Info: Thick Film Chip Resistors Low Resistance for 1206 TA-I No TRL-120S004B page 1/9 1. Scope : This specification applies for the RL12(1206) of thick film chip resistors made by TA-I. Conductor : 2. Construction: (Lead-free or with lead ) Over Coat Sn Plating  | 
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TRL-120S004B | |