TRANSISTORS A 1273 Search Results

BFG55A

Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Contextual Info: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

W1P 59 transistor

Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

IAO5 Sharp

Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Contextual Info: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The

vk200 rfc with 6 turns

Abstract: MRF208 vk200* FERROXCUBE vk200 VK200 rfc MRF207 VK-200 MRF209 FERROXCUBE VK200 HF power amplifier mrf208
Contextual Info: MRF207, MRF208, MRF209 SILICON The EF Line NPN SILICO N RF POWER TRANSISTORS 1.0, 10, 25 WATTS - 220 MHz NPN SILICON RF POWER TRANSISTORS . . . designed fo r 1 2 .5 V o l t large-signal p o w e r a m p lifie r a p p lic a tio n s in c o m m u n ic a tio n s e q u ip m e n t o p e ra tin g a t 2 2 0 M H z .

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

ES5448

Abstract: GES6220 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Type @ 10m A V Min. 1 60 II 6040 • m 40 GES5822 NP hl GES5823 a a GES5824 GES5825 I GES5826 40 GES5827 NPft GES5828 NP» GES6000 NM GES6001 m p GES6002 u n 40 40 25 25 25 GES6003 GES6004

2sd1273

Abstract: 2SD1273A
Contextual Info: Power Transistors 2SD1273, 2SD1273A 2S D 1273, 2S D 1273A Silicon NPN Triple-Diffused Planar Type High DC C urrent Gain Package D im ensions Power A m plifier I i f e , • Features • H ig h D C c u r r e n t g a in (hi-t) • G o o d lin e a r ity o f D C c u r r e n t g a in (Iife )

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463

"Microphone Preamplifier"

Abstract: Microphone Preamplifier high gain audio mixer bipolar audio preamplifier high performance audio preamplifier hi-fi preamplifier low voltage Microphone Preamplifier microphone preamplifier
Contextual Info: Sound Pream plifier SP2 Low noise balanced input m icrophone pream plifier G en eral d escrip tio n The SP2 is a high perform ance low noise microphone preamplifier. Designed for professional audio m ixer w ith very low noise channels. F eatures Low noise bipolar transistors and input resistors

2SC1271

Abstract: EP253 transistors 1UW
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

BC237

Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
Contextual Info: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53

MDA234

Abstract: PHC2300 MDA233 P-Channel Enhancement FET HAT25
Contextual Info: Philips Semiconductors Product specification Complementary enhancement mode MOS transistors FEATURES PHC2300 PINNING - SOT96-1 S08 • High-speed switching PIN SYMBOL 1 S1 2 • No secondary breakdown. DESCRIPTION source 1 91 gate 1 APPLICATIONS 3 S2 source 2

2sd 4515

Abstract: transistors 2sd 2500 2SB1619 B1582 2sd darlington 2sc 043 2SA audio POWER TRANSISTORS 2sa 3704 25C1317 2SC4714
Contextual Info: Transistors Selébtion Guide by Applications and Functions • Silicon Small Signal Transistors • G e n e ra l-u s e Low Frequency Am plifiers and Others Package (No.) Application S S Mini Functions Type (D1) i 2SB 14 62 [ 2SD2216 S Mini Type (D5) T Mini

bq 8050

Abstract: HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ
Contextual Info: 目 录 CONTENTS Page 产品索引（按字母顺序） ALPHANUMERIC INDEX A 产品目录表（按电性能） TABLE OF CONTENTS G 小信号开关二极管 Small Signal Switching Diodes G 小信号肖特基二极管 Small Signal Schottky Diodes H 双极型晶体管

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

FRK250

Contextual Info: H A RR IS S E M I C O N D S E CT OR 5ÔE D HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK250 D, R, H • 4 3 G2 27 1 G D 4 5 7 3 3 37T H H A S 2N7293D, 2N7293R 2N7293H Radiation Hardened N-Channel Power MOSFETs December 1992

I269

Abstract: IRFM044 IRFM044U
Contextual Info: Data Sheet No. PD-9.708A INTERNATIONAL RECTIFIER I T & R ] AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMQ44 N-CHANNEL 60 Volt, 0.040 Ohm HEXFET Product Sum m ary T h e HEXFE T® technology is the key to International Part Num ber B Vpss IR F M 0 4 4

PT320

Abstract: 8595a 289W
Contextual Info: PT-320 320W Triple Output Power Supply I Features : Universal AC input / Full range B uilt-inactive PFC function, PF>0.92 Protections: Short circuit / Overload / Over voltage/O ver temperature No load power consumption under 0.75W by PS-ON control 3 years w arranty

DARLINGTON TRANSISTOR ARRAYS pu1501

Abstract: PU1501 PU4471 pu1601 PU4135 PU7000 PU3127 pu4126 PU4128 PU7456
Contextual Info: Transistors Selection Guide by Applications and Functions I Power Transistor Arrays Series Name PU3000 Series Equivalent Circuit Package (No.) PU4000 Series 8 Pin -SIP Package (D72) (D73) Equivalent Circuit ^ ^ " \S tr u c tu r e PUA3000 Series I 10 Pin *S IP Package (D74)

2n3773 power Amplifier circuit diagrams

Abstract: 10000 watt stabilizer transformer winding formula 2N3773 audio amplifier diagram lm380 equivalent LM566 "direct replacement" LM1820 LM1800 schematic diagram audio power amplifier using 2n3055 mc1349 GS 358S
Contextual Info: Volume 2 National P R E F A C E The second volum e o f N a tio n a l's Linear A p p lic a tio n s h a n d b o o k picks up w here V o lu m e I le ft o ff. Data sheets, a p p lic a tio n briefs and p e rtin e n t articles published in th e 3 years since V o lu m e I was p rin te d are

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTA1273 TRANSISTOR PNP 1. BASE FEATURES z High Current z Low Voltage z Complementary to KTC3205 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

PU1501

Abstract: transistor d 4515 EQUIVALENT equivalent transistor n 4212 d 1275 transistor k 4212 fet 4435 equivalent 4435 fet 4435 transistor U3146 PU3131
Contextual Info: Transistors Selection Guide by Applications and Functions I Power Transistor Arrays S eries N am e P U 3 0 0 0 Series PUA3000 Series P U 4 0 0 0 Series Equivalent Circuit Package (No.) 8 Pin • SIL Package (D68)(D69) Equivalent Circuit ^ '\J 3 tr u c tu r e

MOSFET ior 144

Abstract: IRFM044 IRFM044D
Contextual Info: Data Sheet No. PD-9.708A INTERNATIONAL RECTIFIER IO R AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMQ44 N-CHANNEL 60 Volt, 0.040 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET transistors.

CT914

Abstract: philips audio amplifier ic guide UMA1000LT P-Channel RF Amplifier Philips Semiconductors Selection Guide All Microphone CT918 "true Logarithmic Amplifier" TDA7050 bs107 transistor
Contextual Info: Philips Semiconductors Selection guide Functional index PAGE SPEECH/TRANSMISSION CIRCUITS PCA1070 programmable analog CMOS transmission IC TEA1060/1061 versatile telephone transmission circuits with dialler interface; 304 TEA1060: low-impedance input for dynamic and magnetic microphones;