TRANSISTOR X 313 Search Results

BFG134

Abstract: BJE 247
Contextual Info: b t . 5 3 ^3 1 Philips Semiconductors D D 3131S 36 □ M A P X Product specification NPN 7 GHz wideband transistor ^ BFG134 N AUER PHILIPS/DISCRETE b^E D PINNING DESCRIPTION NPN planar epitaxial transistor in a 4-lead double-emitter plastic SOT103 envelope, intended for

Contextual Info: N AMER PHILIPS/DISCRETE bTE ]> bbS3^31 Q03D70S 77fl W A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in

Contextual Info: N AUER PHILIPS/MSCRETE b^E » • bbS 3131 0 0 2 ^ 1 1 0 'lb? « A P X BLV90 _ J V U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. Features: • diffused emitter-ballasting resistors for an optimum temperature profile

2SK659

Abstract: TC-6071
Contextual Info: SEC j M O S Field Effect Pow er Transistor 2SK659 N ^ * A " N or7 - M O S T s + i y ^ X f m mm N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK659ii, N^-v^;u« a<7 - M 0 S FETT\ 5 V * S * I C i 7 f FET CO HM H X T 't o 10.5 MAX. #

philips bfq

Abstract: BFQ253A BFQ233 BFQ233A BFQ253
Contextual Info: Philips Semiconductors bb.53131 003173b 23T IB A P X PNP 1 GHz video transistor Product specification BFQ253; BFQ253A N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D • PINNING PNP silicon epitaxial transistor In a SOT5 TO-39 envelope with emitter-ballasting resistors and a

2N3137

Abstract: pbgi 2n 3137 CE020
Contextual Info: 2N 3137 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S IL IC IU M . PLAN A R E P IT A X IA L Class-CVH F Power amplifier to 250 MHz A m plifica te u r de puissance VHF en classe - C jusquà 250 MHz v CEO 20 V fT 500 MHz min '’ out 400 mW min.

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: b7E D • bb53=i31 D0E3R3S 04D H A P X BST70A N AMER PHILIPS/DISCRETE y v N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers.

2SC2498

Contextual Info: TOSHIBA 2SC2498 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2498 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION MAXIMUM RATINGS Ta = 4.7 M A X . , 5.1 M A X 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage

LB 1639

Abstract: transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236
Contextual Info: SILICON TRANSISTOR UPA801T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz

transistor vc 548

Abstract: transistor C 548 B Philips
Contextual Info: bbSBTBl DDSMflDT Tb5 « A P X P hilips Sem iconductors NPN 12 GHz wideband transistor BFG33; BFG33/X N AUER PHILIPS/DISCRETE FEATURES Product specification b7E J> PINNING PIN • High power gain • Low noise figure • Gold metallization ensures excellent reliability.

BSY79

Abstract: transistor 746 nixie tubes h21E1 ti c11b
Contextual Info: BSY 79 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S IL IC IU M , P LAN A R E P IT A X IA L Low current switching Commutation faible courant "Nixie" driver 120 V v CEO Commande des tubes "N ix ie ” 1 mA 30 h21E <1 v min V CEsat 0,3 V to 0,2 mA

sem 2106

Abstract: bux13
Contextual Info: I MOTORGLA SC X S T R S /R 12E D F I k 3 b7 2 S4 0 0 0 4 =52*1 3 | MOTOROLA SEM ICO N DUCTO R BUX13 TECHNICAL DATA 15 AMPERES SWITCHMODE* SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . . designed for high speed, high voltage, high power applications.

BFR134

Contextual Info: Philips Semiconductors bbS3T31 0 D 3 n i 2 tit7 M A P X Product specification NPN 7 GHz wideband transistor •■■■ ■■■■■■■. DESCRIPTION N BFR134 AnER P H IL IP S /D IS C R E T E B - b lE PINNING NPN transistor in a plastic SOT37

2SJ153

Contextual Info: M O S Field Effect Pow er Transistor 2SJ153 P f^ ;U / N ° 7 - M O S FET I i f f l 2SJ153 i, MOS FET T, 5 V H i * IC (c J; è Æ æ œ S O T t ë f r i S i i t X ' f * < , y w / 'i # K, y x ' f •/ f - > 7 f > X f t W B 0 ( T O : mm „ i , f f i - i x T ^ S fc * > ,

Contextual Info: Ordering num ber : E N 4916A CMOS LSI LC35256A, AS, AM, AT-70/85/10 No. 4 916A 256K 32768 words x 8 bits SRAM with OE and CE Control Pins I Overview The LC35256A, AS, AM, and AT are 32768 words x 8-bits asynchronous silicon gate CMOS SRAMs. These products feature a 6-transistor full-CMOS memory cell,

Contextual Info: BF980A J V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected. Intended for UHF applications, such as UHF television tuners, with 12 V supply voltage and professional communication equipment.

2SC382

Abstract: W2W89 882s 12W55 transistor 2sc382
Contextual Info: 2 s c 382 SILICON NPN PLANAR TRANSISTOR L 2j O t h ; pif i, o TV let, 2nd. Picture IP Amplifier Applications : • Gpe = 33dB Typ. (f = 45MHz) • I1^(bIAO Ci|fft • Excellent forward AGC Characteristic MAXIMUM RATINGS CHARACTERISTIC 3 u $ * • X í y ^

transistor jsx

Abstract: 2SK681 ipw fet s0822 t460 transistor
Contextual Info: ^ £ — 5 7 . 5 / — h M O S W * im . R $ b $ k '< t7 - Y :7 > ï ï * 9 M O S Field Effect Power Transistor 2SK681 MOS F E T 2SK 681Ü , N f - - v ^ . ; H i^ > 'f I7 - M 0 S t i i z «t i m ^c7 K 7 # x a 7 f > / FETT, f v q x ¥ i i : mm) 5 V'ffiiH*IC<7)

Contextual Info: b b S B ' m 0054443 STT « A P X Philips Semiconductors PNP general purpose transistor — BC807W; BC808W AUER PHILIPS/DISCRETE FEATURES Product specification b?E j>— — — • MAX. UNIT -5 0 V -3 0 V PIN CONFIGURATION • High current • S- mini package.

IC ATA 2398

Abstract: ata 2398 transistor D 2395 NE33284A te 2395 TRANSISTOR low noise FET NEC U TVR 681
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE33284A L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The N E33284A is a Herero Junction FET that utilizes the hetero junction to create high m obility electrons. Its excellent low noise and high associated gain make it suitable for GPS,

Contextual Info: b b 5 3 ci31 002S3bb 003 H A P X Philips Semiconductors Product specification b?E D N AMER PH ILI PS/ DI SC R ETE £ NPN 5 GHz wideband transistor FEATURES • BFT25A PINNING Low current consumption 100 p A - 1 mA • Low noise figure • Gold metallization ensures

Contextual Info: motorola sc -c x s t r s / r f > "fiì DE | f c , 3 b 7 a S 4 DD7ÖL47 7 t 3 / - 2-3 T- MOTOROLA •I SEM ICONDUCTOR TECHNICAL DATA RF TRANSISTOR MAXIM UM RATINGS NPN SILICON Rating Collector-Emitter Voltage Collector-Emitter Voltage RBE « 50 n Symbol Value

LB 1639

Abstract: UPA801T BF 830 transistor UPA801T-T1-A NE856 S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA