TRANSISTOR U 554 Search Results
TRANSISTOR U 554 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
BLA1011-2 |
![]() |
Avionics LDMOS transistor |
![]() |
||
RX1214B300YI |
![]() |
RX1214B300Y - Microwave Power Transistor |
![]() |
||
CA3127MZ |
![]() |
CA3127 - Transistor Array |
![]() |
||
RX1214B130YI |
![]() |
NPN microwave power transistor |
![]() |
||
MX0912B251Y |
![]() |
NPN microwave power transistor |
![]() |
TRANSISTOR U 554 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
IR2E27A
Abstract: Sharp IR2E02 IR2E01 IR2E25 Sharp IR2E27A IR2E02 IR2E27A SHARP LED ir2e01 ir2e09 IR2E28
|
OCR Scan |
24DIP/24SOP IR2C10 IR2E34 IR2E27A Sharp IR2E02 IR2E01 IR2E25 Sharp IR2E27A IR2E02 IR2E27A SHARP LED ir2e01 ir2e09 IR2E28 | |
S100 NPN TransistorContextual Info: u r 2SC D • fl23 Sb05 GGQ4507 S NPN Silicon RF Transistor isiEG : -~r-S i- M BF 503 -SIEMENS AKTIENGESELLSCHAF - ;— BF 5 0 3 is an NPN silicon planar RF transistor in TO 9 2 plastic package 1 0 A 3 DIN 4 1 8 6 8 . |
OCR Scan |
GGQ4507 E--08 S100 NPN Transistor | |
2SC1622AContextual Info: NEC j > IJ Z1 > h- =7 > 9 S ilic o n T ra n s is to r 2SC1622A N P N i k ^ + v ' / ’VUJfc '> U NPN Silicon Epitaxial Transistor Audio Frequency High Gain Amplifier H&m / P A C K A G E ^/FEA TU RES » S'J 7"') DIMENSIONS KICffl t U f t i t t o U n it : mm) |
OCR Scan |
2SC1622A 2SC1622A | |
RC723DP
Abstract: SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK
|
OCR Scan |
/2525A /3525A /2527A /3527A 523/3523A RC723DP SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK | |
2SB554
Abstract: toshiba 2sb554 2SD424 TOSHIBA 2SD424 SB554 S8B554-R
|
OCR Scan |
2sb554 -10mA, -10V-IBf= 2SB554 S8B554â -20mA toshiba 2sb554 2SD424 TOSHIBA 2SD424 SB554 S8B554-R | |
BF195 equivalent
Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
|
OCR Scan |
||
Contextual Info: Philips Components D a ta s h e e t s ta tu s P ro d u ct sp ecification d a te o f is s u e N o v em b e r 1 990 FEATURES • BSS100 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA Direct interface to C-M O S, TTL, etc. |
OCR Scan |
BSS100 003bl2b 0Q3bl37 D03fcil2fl | |
Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
|
OCR Scan |
||
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR ¿¿PA803T NPN SILICON EPITAXIALTRANSISTO R WITH BUILT-IN 2 ELEMENTS M INI MOLD ¿¡PA803T has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAWINGS (U n it: m m ) FEATURES • |
OCR Scan |
PA803T PA803T 2SC4570) uPA803T | |
613 GB 123 CT
Abstract: transistor NEC D 587 Ic D 1708 ag 513 gb 173 ct MPA80 nec d 882 p transistor ic nec 2051 transistor NEC D 882 p NEC 2561 h NEC 2561 de
|
OCR Scan |
uPA803T /xPA803T 2SC4570) 613 GB 123 CT transistor NEC D 587 Ic D 1708 ag 513 gb 173 ct MPA80 nec d 882 p transistor ic nec 2051 transistor NEC D 882 p NEC 2561 h NEC 2561 de | |
bss100 transistor
Abstract: BSS100 PINNING-TO-92 JZSS773
|
OCR Scan |
BSS100 PINNING-TO-92 JZSS773 003bl57 LL53S31 003bl2fi bss100 transistor BSS100 | |
NJL5165K
Abstract: NJL5165KL 1FPM tw10s
|
OCR Scan |
NJL5165KL NJL5165K Ta-25 1FPM tw10s | |
carbon resistor
Abstract: tp3098 TO-117a TP309
|
OCR Scan |
TP3098 45004/B) 45004/K) TP309Ã O-117A) carbon resistor TO-117a TP309 | |
2SC4843
Abstract: TRANSISTOR nf 841
|
OCR Scan |
2SC4843 2SC4843 TRANSISTOR nf 841 | |
|
|||
Contextual Info: f Z 7 S G S -T H O M S O N Ä T# 5 BUV62A m O T K S FAST SWITCHING POWER TRANSISTOR • ■ ■ ■ F A S T S W IT C H IN G TIM E S LO W S W IT C H IN G LO S S E S LO W BASE C U R R E N T R E Q U IR E M E N T S V E R Y LO W S A T U R A T IO N V O L T A G E A N D |
OCR Scan |
BUV62A | |
12N05L
Abstract: 748U STK12N
|
OCR Scan |
STK12N05L STK12N06L TK12N OT-82 OT-194 STK12N05L/STK12N06L 12N05L 748U STK12N | |
MMPQ3467
Abstract: SOIC-16 TN3467A
|
OCR Scan |
TN3467A MMPQ3467 O-226 SOIC-16 S0113D D04DbMfl MMPQ3467 SOIC-16 TN3467A | |
2SC696
Abstract: 2SC708A transistor 2sc696 2SC696A 2SC734 2SC853 2SC708 2SC815 2SC734 Y 2SC32
|
OCR Scan |
2SC734 2SC1959 2SC696 2SC708A transistor 2sc696 2SC696A 2SC853 2SC708 2SC815 2SC734 Y 2SC32 | |
2SD1378Contextual Info: 2SD1378 h i 7 > v 7 .$ / T ransistors 2SD1378 y 'J 3 > h 7 > y 7 ^ U k M y & W t ^ Ifffl/L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • • fl.JfjT|-;±|l/Dimensions Unit: mm) 1) V c e o =80V, T —x 2) V c eo = Pc = 1 0 W 2 T 7 " T T K 7 "f A t* 5 g „ |
OCR Scan |
2SD1378 2SB1007. 2SD1378 | |
2SD480
Abstract: 2SD297 2SD388 25D40 k 553 y 1a 2sd438 transistor 2sd400 transistor data 2SD392 2SD415 2SD400
|
OCR Scan |
2SD297 2SD476 3D478 2SD479 2SD480 2SD480 2SD297 2SD388 25D40 k 553 y 1a 2sd438 transistor 2sd400 transistor data 2SD392 2SD415 2SD400 | |
MTP27N10EContextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF140 Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate T h is T M O S P o w e r FET is d e s ig n e d fo r lo w Tf v o lta g e , h ig h s p e e d p o w e r s w itc h in g a p p lic a tio n s s u c h a s s w itc h in g re g u la to rs , c o n v e rte rs , s o le n o id |
OCR Scan |
IRF140 D31H5 MTP27N10E | |
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-61 PACKA G E N PN V cE O Ic s u s (m ax ) VOLTS A M PS 2N 1724 80 5 2 0 -9 0 @ 1 5 1@ 2N 1724A 120 5 2N 1725 80 2N 2811 D E V IC E TY PE ^FE@ IC/ V ce ( m in /m a x @ A /V ) ^ C E (sa t) @ If/IB (V @ A /A ) |
OCR Scan |
||
BUV 12
Abstract: buv12
|
OCR Scan |
||
bu548
Abstract: BU548A BUS48 erni relay erni relay B1 5.5 relay ERNI transistor 2sc 548 BUS48A CIT Relay relay ERNI ad 5.2
|
OCR Scan |
17-JUN-1999 BUS48 BUS48A Time-25Â bu548 BU548A erni relay erni relay B1 5.5 relay ERNI transistor 2sc 548 BUS48A CIT Relay relay ERNI ad 5.2 |