TRANSISTOR TIP36C Search Results

KIA78*pI

Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

TIP35C

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TIP35C NPN SILICON TRANSISTOR HIGH POWER TRANSISTORS  DESCRIPTION The UTC TIP35C is a NPN Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP36C.  INTERNAL SCHEMATIC DIAGRAM

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TIP36C PNP SILICON TRANSISTOR HIGH POWER TRANSISTORS  DESCRIPTION The UTC TIP36C is a PNP Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP35C.  INTERNAL SCHEMATIC DIAGRAM

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TIP36C PNP SILICON TRANSISTOR HIGH POWER TRANSISTORS  DESCRIPTION The UTC TIP36C is a PNP Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP35C.  INTERNAL SCHEMATIC DIAGRAM

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TIP35C NPN SILICON TRANSISTOR HIGH POWER TRANSISTORS  DESCRIPTION The UTC TIP35C is a NPN Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP36C.  INTERNAL SCHEMATIC DIAGRAM

BU108

Abstract: 2SC1629 equivalent BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times:

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

2N4922

Abstract: BU108 2SB655 BD390 MJ11021 2sb557 BDX54 2n6107 MOTOROLA 2SC1943 MJE2482
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV23 SWITCHMODE Series NPN Silicon Power Transistor 30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 15 at IC = 8 A

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

2SD436

Abstract: mje15033 replacement BU108 MJE340 MOTOROLA 3140 BD VCC 3802 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18006 * MJF18006 *  Data Sheet SWITCHMODE Designer's *Motorola Preferred Device NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS The MJE/MJF18006 have an applications specific state–of–the–art die designed

EQUIVALENT FOR mjf18004

Abstract: 2N3055 plastic BU 647 motorola MJ480 motorola AN485 transistor 3655 BU108 BD139 fall time 2N6491 equivalent BD139 circuits
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MJE18004 * MJF18004 * Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state–of–the–art die designed

k 3563

Abstract: 2N6133 equivalent BU108 of ic BD140 2N6407 replacement for TIP147 RCA29 RCA1C03 BUS47AP BD 440 PNP transistors
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE BUL147* BUL147F* Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS The BUL147/BUL147F have an applications specific state–of–the–art die designed

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

TIP35CW

Abstract: TIP36C to-247 TIP36CW Marking STMicroelectronics TO 247 TIP35C transistor JESD97 TIP35C TIP36C TIP35 ecopack
Contextual Info: TIP35CW TIP36CW Complementary Silicon High Power Transistors Features • STMicroelectronics PREFERRED SALESTYPES Description The device is a silicon Epitaxial-Base NPN transistor mounted in TO-247 plastic package. It is intentend for use in power amplifier and

TIP35C EQUIVALENT

Abstract: SC-65 TIP35C TIP36C
Contextual Info: TIP36C PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 ! High Current Capability ! High Power Dissipation ! Complementary to TIP35C ABSOLUTE MAXIMUM RATING Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage

tip35c equivalent

Abstract: SC-65 TIP35C TIP36C
Contextual Info: NPN TIP35C PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 ! High Current Capability ! High Power Dissipation ! Complementary to TIP36C ABSOLUTE MAXIMUM RATING Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: TIP35C TIP36B/TIP36C COMPLEMENTARY SILICON HIGH POWER TRANSISTORS • STMicroelectronic PREFERRED SALESTYPES DESCRIPTION The TIP35C is a silicon Epitaxial-Base NPN transistor mounted in TO-218 plastic package. It is intented for use in power amplifier and

tip35c

Abstract: transistor tip35c test TIP35C EQUIVALENT TIP35C transistor TIP36B TIP35C equivalents TIP36C TIP35 TIP36C morocco
Contextual Info: TIP35C TIP36B/TIP36C COMPLEMENTARY SILICON HIGH POWER TRANSISTORS • STMicroelectronic PREFERRED SALESTYPES DESCRIPTION The TIP35C is a silicon Epitaxial-Base NPN transistor mounted in TO-218 plastic package. It is intented for use in power amplifier and

TIP35C

Abstract: TIP36C tip35
Contextual Info: SEMICONDUCTOR TIP35C TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. Q B K F A I FEATURES E Recommended for 75W Audio Frequency C Amplifier Output Stage. J H Complementary to TIP36C. G Icmax:25A. L D d MAXIMUM RATING Ta=25

75W PNP

Abstract: TIP35C TIP36C TIP35C transistor TIP35CG TO-3P* tip35c
Contextual Info: SEMICONDUCTOR TIP36C TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. Q B K F A I FEATURES E Recommended for 75W Audio Frequency C Amplifier Output Stage. J H Complementary to TIP35C. G Icmax:-25A. L D d MAXIMUM RATING Ta=25

TIP35CA

Contextual Info: SEMICONDUCTOR TIP35CA TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 75W Audio Frequency H I Complementary to TIP36CA. R C J Amplifier Output Stage. G Icmax:25A. D L E MAXIMUM RATING Ta=25

TIP36CA

Contextual Info: SEMICONDUCTOR TIP36CA TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 75W Audio Frequency H I Complementary to TIP35CA. R C J Amplifier Output Stage. G Icmax:-25A. D L E MAXIMUM RATING Ta=25

motorola 415 D2PAK

Abstract: 2N3055 transistor cross reference BU108 2N5686 726 MOTOROLA TRANSISTORS 2sc15 DIODE 2N4002 transistor 2SC1061 transistor bdx54c
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL44D2  Data Sheet Designer's High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 2 AMPERES 700 VOLTS 50 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network