TRANSISTOR T20 Search Results

200V transistor npn 2a

Abstract: T2096 T2096L-TM3-T T2096-TM3-T TO-251 Package QW-R21
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD T2096 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ DESCRIPTION The T2096 is a NPN Silicon Planar Transistors in TO-251 package. It is intended for high voltage, switching power supply and industrial applications. „ FEATURES

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD T2096 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR  DESCRIPTION The T2096 is a NPN Silicon Planar Transistors in TO-251 package. It is intended for high voltage, switching power supply and industrial applications.  FEATURES

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK545-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fieid-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC144WU NPN resistor-equipped transistor Product specification Supersedes data of 1997 Dec 12 File under Discrete Semiconductors, SC04 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench' technology. The device features very low on-state resistance

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Voltage clamped logic level FET GENERAL DESCRIPTION Protected N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in automotive applications. It has

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

Contextual Info: PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding, DC/DC and AC/DC converters, and in general purpose switching

R1200

Abstract: diode v3e
Contextual Info: FF 50 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte VcES Maximum rated values Ic Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0 ,1 5 5 °C/W RthJC ° c / w DC, pro Zweig / per arm

transistor t20

Abstract: 2sj328
Contextual Info: P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SJ328,2SJ328-Z SWITCHING P-CHANNEL POWER MOS PET INDUSTRIAL USE DESCRIPTION T he 2SJ328 is P-channel M O S Field Effect Transistor designed PACKAGE DIMENSIONS in millimeters fo r solenoid, m o to r and la m p driver.

Contextual Info: FF 50 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 50 A Ic Therm ische Eigenschaften Therm al properties Rthjc DC, pro B austein/p e r module 0,155 C/W ’C/W DC, pro Zweig / per arm 0,31 C/W

BUK453-500B

Abstract: T0220AB E04020
Contextual Info: N AMER P H I L I P S / D I S C R E T E b'IE D t . b s a 'm 00301=10 PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

2SC4060

Abstract: T20W45FX
Contextual Info: SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4060 Case : MTO-3P T20W45FX Unit : mm 20A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2SC4060

Abstract: T20W45FX
Contextual Info: SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4060 Case : MTO-3P T20W45FX Unit : mm 20A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

ZUMT5088

Abstract: ZUMT5179
Contextual Info: SOT323 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR ZUMT5088 ISSUE 1 - DECEMBER 1998 PARTMARKING DETAIL - T20 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 4.5 V Continuous Collector Current

2SC2945

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC2954 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION T h e 2 S C 2 9 5 4 is an NPN ep ita xia l silicon tra n sisto r d isign ed for low noise w ide ba nd a m p lifie r and bu ffe r a m p lifie r of O SC , for VH F

Contextual Info: UNISONICTECHNOLOGIESCO., LTD T2096 NPN SILICON TRANSISTOR H I GH V OLT AGE T RAN SI ST OR ̈ DESCRI PT I ON The T2096 is a NPN Silicon Planar Transistors in TO-251 package. It is intended for high voltage, switching power supply and industrial applications.

Contextual Info: T O S H IB A G T20G10KSM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 0 G 1 01 S M ) Unit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V(j e (5at) = 8V (Max.) (Iq = 130A) Enhancement-Mode

PHW7N60

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor PINNING - SOT429 T0247 PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance Id F*tol RdS(ON) PIN CONFIGURATION MAX. UNIT 600 7 147 1.2

Contextual Info: EVALUATION KIT AVAILABLE MAX8739 TFT, LCD, DC-DC Converter with Operational Amplifiers General Description The MAX8739 includes a high-performance, step-up regulator and two high-current operational amplifiers for active-matrix thin-film transistor TFT liquid-crystal