TRANSISTOR T20 Search Results

2SJ329

Abstract: MEI-1202 TEA-1035
Contextual Info: DATA SHEET N E C kf * A P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SJ329 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ329 is P-channel MOS Field Effect Transistor designed PACKAGE DIMENSIONS in millimeters fo r solenoid, m otor and lamp driver.

2SC4060

Abstract: T20W45FX
Contextual Info: SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4060 Case : MTO-3P T20W45FX Unit : mm 20A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2SC2945

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC2954 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION T h e 2 S C 2 9 5 4 is an NPN ep ita xia l silicon tra n sisto r d isign ed for low noise w ide ba nd a m p lifie r and bu ffe r a m p lifie r of O SC , for VH F

Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ494 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in millimeter This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. 10 .0 ± 0.3

T20D201

Abstract: gt20d201
Contextual Info: TOSHIBA GT20D201 Insulated Gate Bipolar Transistor U nit in m m Silicon P Channel MOS Type High Power Amplifier Application Features • High Breakdown Voltage - VCES = -250V Min • High Forward Transfer Admittance - Yfs' = 10S (Typ.) • Complementary to GT20D101

DU2820S

Abstract: fl capacitor 1000 K 739 mosfet
Contextual Info: -= -=i an AMP comDanv = RF MOSFET Power Transistor, 2OW, 28V 2 - 175 MHz DU2820S Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices Absolute Maximum Ratings at 25°C

2SK525

Abstract: FI54 FI540
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ar-MOS 2SK525 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. DC-DC CONVERTER, MOTOR AND SOLENOID DRIVE APPLICATIONS. 1 CL3MAX. 03 . 2±<12 7.0 FEATURES: . Low Drain-Source ON Resistance

GT20D201

Abstract: GT20D101 10S0V
Contextual Info: TOSHIBA GT20D101 insulated Gate Bipolar Transistor Unit in mm Silicon N Channel MOS Type High Power Amplifier Application Features • High Breakdown Voltage - v c e s = 2 5 0 V M in • High Forward Transfer Admittance - Yfs = 10S0VP-) • Complementary to GT20D201

applications of ujt with circuits

Abstract: UJT 2N491 applications of ujt UJT specification ujt firing circuits of scr ujt transistor 2N489 UJT 2N492 Germanium Power Devices TRANSISTOR 2N492
Contextual Info: Germanium Power Devices Corp SILICON UNIJUNCTION TRANSISTOR Specifications S IÚCON TYPES I Silicon Unijunction T ra n ­ sistors are three-term inal devices having a stable “ N ” type negative resistance characteristic over a wide tem perature range. A stable peak point

2SJ210

Abstract: MARK H16 2SJ21 T200 T400
Contextual Info: MOS FIELD EFFECT TRANSISTOR 2SJ210 P-CHANNEL MOS FET FOR SWITCHING The 2SJ210, P-channel vertical type MOS FET, is a switching device OUTLINE DIMENSIONS Unit : mm which can be driven directly by the output of ICs having a 5 V power 2.8 ± 0.2 source. 1.5

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2SJ21

Abstract: 2SJ210 T200 T400
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SJ210 P-CHANNEL MOS FET FOR SWITCHING The 2SJ210, P-channel vertical type MOS FET, is a switching device

DIODE marking CJSS

Abstract: marking j5a 2SJ204 2SK1582 T200 T400
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SJ204 P-CHANNEL MOS FET FOR SWITCHING The 2SJ204, P-channel vertical type MOS FET, is a switching device

2SJ204

Abstract: marking j5a 2SK1582 T200 T400 marking h15 fet marking LR
Contextual Info: MOS FIELD EFFECT TRANSISTOR 2SJ204 P-CHANNEL MOS FET FOR SWITCHING The 2SJ204, P-channel vertical type MOS FET, is a switching device PACKAGE DIMENSIONS Unit : mm w hich can be driven d ire ctly by the o u tp u t of ICs having a 5 V power source. 2.8 ± 0.2

38478

Abstract: 2222 372 Philips 2222 344 capacitors International Power Sources Philips 2222 372 capacitor BLF546 2322 151 12x3 727 Transistor power values GP 24A
Contextual Info: Philips Semiconductors Product specification UHF push-pull power MOS transistor PHILIPS INTERN A T I O N A L FEATURES 3 SbE m D 711005 b Ü M 4 0 Q3 BLF546 fi'ìD B I P H I N PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability

2SJ179

Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ179 P-CHAIMNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ179, P-channel vertical type MOS F E T , is a switching device

TRANSISTOR 2N4289

Abstract: Q4006at 2N2222A mps quadrac Q5010A NPN transistor 2n2222A Q4010LT 2N39Q3 Q6015A lora
Contextual Info: LO RA S INDUSTRIES INC MEE D • 5500440 OGGDQET G H L O R A TRANSISTOR PART No TYPE PACKAGE T O - 1 8 Package 2N0918 2N2221 :2N2222 2N2222A NPN NPN NPN NPN DESCRIPTION Pt @25°C Watts !<¿ Amps -r - n~? i 1 t-U\ VEBO Volts VCEO Volts VCBO Volts Hfe Hfe \ç

sn29601

Abstract: SN7400J 9601C Direct Replacement DALLAS SN7404J SN7410J SN29002 SN29003 SN29004 Sn2960
Contextual Info: SERIES 29000 TRANSÌSTOR-TRANSISTOR LOGIC jdescription Senes 2 9 0 0 0 devices are designed to be used in existing systems as replacments fo r 9 0 0 0 -ty p e circuits. Series 2 9 0 0 0 circuits o ffe r several significant advantages over 9 0 0 0 type circuits, some o f w hich are:

2SJ203

Abstract: T200 T400
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ203 P-CHANNEL M O S FET FOR S W IT C H IN G The 2SJ203 is a P-channel vertical typ e MOS FET w hich can be driven PACKAGE DIMENSIONS Unit : mm by a 2.5 V power supply. 2.8 + 0.2 As the MOS FET is driven by low voltage and does not require con­

Contextual Info: MOTOROLA SC XSTRS/R F bfl E » b3ti72S4 00^104 inOTb T20 MAXIMUM RATINGS Rating Unit Symbol Value C ollector-E m itter Voltage VcEO -4 0 Vdc Collector-Base Voltage VCBO -4 0 Vdc Em itter-Base Voltage V e BO - 5 .0 Vdc lc -6 0 0 m Adc Symbol M ax Unit Pd

Snubber circuit Design

Abstract: MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor
Contextual Info: 1. Ratings of GTR module collector currents, voltage between terminals, power dissipation, junction temperature, storage temperature etc. o f transistors. These charac­ teristics are closely related each other and cannot be considered independently are further, very

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

S35S2

Abstract: Transistor 168 T6R20 S1RA60 S1RA80 S25S2 S30S3 SCA-23 T10R40 T200D30
Contextual Info: vN EW PRODUCTS l.SILICON RECTIFIER DIODE lo V rm V n I surge V f A ] (M A X (V ) Type (A ] S1RA60 F o r high frequency re c tifie r trr (M A X ) (n S ) CM ] 600 0.1 3 10 — S1RA80 S chottky barrier (V ) Cv) IR (M A X ) 0.5 5 25 S35S2 35 S30S3 30 P r surge

rc 4506

Abstract: ELS 300 E-T PROCESS CONTROL TIMER application M34506M2-XXXFP M34506M4-XXXFP PRSP0020DA-A M34506E4FP A-6390
Contextual Info: REJ09B0194-0201 4506 Group 4 User's Manual RENESAS 4-BIT CISC SINGLE-CHIP MICROCOMPUTER 4500 SERIES Before using this material, please visit our website to confirm that this is the most current document available. Rev. 2.01 Revision date: Feb 07, 2005 www.renesas.com