TRANSISTOR T0 92 Search Results

Contextual Info: CRO MPS8097 NPN SILICON TRANSISTOR T0-92A DESCRIPTION MPS8097 is NPN silicon planar epitaxial transistor designed fo r general purpose applications. •»» EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

STA92N

Abstract: STC42N T0-92N
Contextual Info: STA92N Semiconductor PNP Silicon Transistor Descriptions • High voltage application Features • High collector-emitter voltage : VCEO=-300V • Complementary pair with STC42N Ordering Information Type NO. Marking Package Code STA92N STA92 T0-92N Outline Dimensions

Contextual Info: BF 224 CASE T0-92E BF224 is an NPN silicon planar epitaxial transistor designed for-general purpose high frequency oscillator, amplifier,and mixer applications. CEB C BE ABSOLUTE MAXIMUM RATINGS 45V 30V 4V 50mA 250mW -55 to +150°C Collector-Base Voltage VCBO

2SK19Y

Abstract: 2SK19
Contextual Info: CRO 2SK19 N-CHANNEL SILICON FET CASE T0-92DD DESCRIPTION 2SK19 is N-channel silicon planar field effect transistor designed for FM tuner and VHF amplifier applications. DSG ABSOLUTE MAXIMUM RATINGS Gain-Drain Voltage Gate Current Total Power Dissipation @ T a= 2 5 °C

2SK1929

Contextual Info: TOSHIBA 2SK1929 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SII.5 2 S K 1 929 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in m m T0-220FL CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE 10.3MAX.

2SB1328

Abstract: 2SD2008 2SB1329 2SD2010 2SB1041 2sd2172 2SD1929 2SB1425 2SA1861 2SB1306
Contextual Info: Transistors TO-92L •T0-92LS • MRT TO-92L is a high power version of TO -92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Package Application TO-92L I T0-92LS | MRT Part Nò.

2SD2008

Abstract: 2SD2006 transistor 2SD2006 2Sb1333 2SD2010 2SB1482 2SB1515 2SB1306 transistor 2SD2004 2SB1331
Contextual Info: Transistors TO-92L • T0-92LS • MRT TO-92L is a high power version of TO -92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Pc W (T a = 2 5 °C ) P a ckage Application

2sa1820

Abstract: 2SA1903 2SB1425 2SC4721 2SC4720 2sa190 2SA934 2SA1818 2SA1902 2SA935
Contextual Info: T ranslstors TO -92L • TO-92LS * MRT TO-92L is a high power version o l TO-92 and T0-92LS is a sfcnmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automate placemen« machine. : iiUNtt I»0*pW« IWNffl •Product Designation

2SA1482

Abstract: 2SD2008 2SA1903 2SD2010 2sc4722 2SD2005 2SA1861 2sa1820 2Sb1333 2SB1374
Contextual Info: _ . . • Transistors 7028*^ DQQ7M31 TbT ■ R H M T0-92L •T0-92LS •MRT TO-92L is a high power version of TO-92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Pc W (Ta=25*C )

2N2924

Contextual Info: iVlJrà/zrN j j y u m r u CRO ¿jyo and similar types NPN SILICON TRANSISTOR D E S C R IP T IO N The above types are NPN silicon planar epitaxial transistors for use in A F small amplifiers and direct coupled circuits. CASE T0-92A Their maximum power dissipation

R312

Abstract: AJA SOT23 e purse MMBTA64 MPSA64 MPSW64
Contextual Info: MPSA64/MPSW64/MMBTA64 n ä TL SEM IC O DISCRETE H E ' K g M J lA E n U[] Bc MPSW64 J*UH b TL/G/10100-1 0 0 3 7 ^ 5 | T - 3 1 '2 1 MMBTA64 if T0-92 b501L3G - National Semiconductor MPSA64 » g TO-236 SOT-23 TO-226AE TL/G/10100-5 " C TL/G/10100-4 PNP Darlington Transistor

Contextual Info: G EN ER A L D ESC R IP T IO N :Tlie 0050 is an N P N epitaxial silicon planar transistor designed for use in the audio output Com plem entary stage and converter/inverter circuits. T0-92B to 8550. M A X I M U M R A T IN G S Note 1 Maximum Temperatures —55°C to +135°C

Contextual Info: BF 199 NPN SILICON PLANAR EPITAXIAL HF TRANSISTOR MICRO EL.ECTRDNICS CASE T0-92E BF199 is an NPN s ilic o n p la n a r e p ita x ia l tr a n s is to r designed f o r RF a m p lifie rs and video IF a m p lifie rs in common e m itte r c o n fig u ra tio n .

2N3927

Abstract: 2N3926 2N3924 2N3924h 7z08 4312 020 36640 philips 1969 transistor 2N3 400Ic philips 1968
Contextual Info: MIE D m 711Gfl2b 002Ö057 1 2N3924 2N3926 2N3927 [PHIN PHILIPS INTERNATIONAL r - 3 3 - O SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS The 2N3924 is an n-p-n overlay transistor in aTO-39 metal envelope with the collector connected to the case. The 2N3926 and the 2N3927 are n-p-n overlay transistors in T0-60 metal envelopes with the emitter

CRC16

Abstract: DS2406 DS2406P DS2406T DS2406V DS2406X DS2407 DS5000 mosfet 2N7000
Contextual Info: Preliminary DS2406 Dual Addressable Switch Plus 1K-Bit Memory www.dalsemi.com FEATURES PIN ASSIGNMENT TO-92 Open drain PIO pins are controlled and their logic level can be determined over 1-Wire bus for closed-loop control Replaces and is fully compatible with

BS170

Contextual Info: SIEMENS SIPMOS Small-Signal Transistor BS 170 VDS = 60 V / o = 0 .3 A ^DS on = 5.0 Q -4.2- • N channel • Enhancement mode • Package: TO-92 a 1) 1.6 0.4 GPT05573 taped version Type Ordering code for version on tape Ordering code for version in bulk

Contextual Info: B fS S ffA 2N7000 N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY TO-92 TO-226AA BOTTOM VIEW Id (A) V (BR)DSS (V) 60 5 0.2 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDS06 3 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted) SYMBOL

2N7007

Contextual Info: SILICONIX INC Ô2SM73S QGmGST 1 1ÛE D fX S ilic o n ix 2N7007 incorporated -T -U l-U ä N-Channel Enhancem ent-M ode M OS Transistor TO -92 PRODUCT SUMMARY V BR DSS (V) fDS(ON) (ii) >d (A) PACKAGE 240 45 0.065 TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDN24 (See Section 7)

T03 servo motor

Contextual Info: M¿K M.S. — KENNEDY CORP. DUALOP-AMP WER 2541 8170 Thompson Road •Cicero, N.Y. 13039 315 699-9201 FEATURES: • High Output Current - 1 0 Amps Peak • Wide Power Supply Range - ±10V to ±40V ■ On Board Current Limit • Fet Input • Isolated Case

transistor Siemens 14 S S 92

Abstract: transistor 115 47e
Contextual Info: I 023SbOS 0020014 3 El SIEG SIEMENS AKTIENGESELLSCHAF 47E » T-21-Z5 BS 107 SIPMOS Small-Signal Transistor Vos /„ = 200 V =0.13 A flbs o n = 26 Q • N channel • Enhancement mode • Package: TO-92') "type Ordering code for version on tape Ordering code

bsv57b

Abstract: bsv57 transistor BSV57 75494 Scans-0010449 ansteuerung emitter Unijunction unijunction BSV57 thyristor control
Contextual Info: Silizium-Unijunction-Transistör Silicon Unijunction Transistor Anwendungen: Ansteuerung von Thyristoren Applications: Thyristor co n tro l Abmessungen in mm Dimensions in mm * 0,5 Normgehäuse Case 10 B 3 DIN 41868 JEDEC TO 92 G ew icht • Weight max. 0,4 g

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bb53^31 □D2flD31 813 PH2369 IAPX l SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N-P-N transistor in a plastic TO-92 envelope intended for high-speed switching applications. QUICK REFERENCE DATA Collector-base voltage open emitter

Contextual Info: N A PIER PHILIPS/DISCRETE b5E T> m bbSBTBl DDE7flm DEE B A P X BSR50 to 52 I N-P-N DARLINGTON TRANSISTORS Silicon planar transistors in plastic TO-92 envelopes, intended fo r industrial switching applications e.g. print hammer, solenoid, relay and lamp driving.

mps6514

Contextual Info: b^E ]> • bb53T31 Q Q S T T n A2T MPS6513 MPS6514 MPS6515 APX N AUER PHILIPS/DISCRETE V. AMPLIFIER TRANSISTOR General purpose n-p-n transistors in TO-92 envelopes. The complementary types are MPS6517 to MPS6519. QUICK REFERENCE DATA MPS6513 6514 6515 VCEO