TRANSISTOR SMD W2 Search Results

TRANSISTOR SMD W2 Result Highlights (5)

Part	Manufacturer	Description	Download
BLA1011-300	Rochester Electronics LLC	BLA1011-300 - 300W LDMOS Avionics Power Transistor	PDF
54F151LM/B	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL	PDF
ICL7667MJA	Rochester Electronics LLC	ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8	PDF
93L422ADM/B	Rochester Electronics LLC	93L422A - 256 x 4 TTL SRAM	PDF
54F151/BEA	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA)	PDF

TRANSISTOR SMD W2 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor SMD Lf Abstract: LF transistor smd SOT-23 lF smd transistor SMD Transistor LF BKC Semiconductors Contextual Info: Switching Diode SMD SOT-23 Plastic Use Advantages T3 S Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,	OCR Scan	OT-23 transistor SMD Lf LF transistor smd SOT-23 lF smd transistor SMD Transistor LF BKC Semiconductors	PDF
capacitor 2200 uF Abstract: transistor 2N2222 SMD R10 smd 2n2222 smd transistor 2N2222 78L08 ACPR1980 ACPR400 ACPR600 ACPR750 Contextual Info: BLF4G10-160 UHF power LDMOS transistor Rev. 01 — 22 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB test circuit.	Original	BLF4G10-160 ACPR400 ACPR600 ACPR750 ACPR1980 BLF4G10-160 capacitor 2200 uF transistor 2N2222 SMD R10 smd 2n2222 smd transistor 2N2222 78L08	PDF
transistor 2N2222 SMD Abstract: capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 GP 0,47K w2 smd transistor ACPR1980 Contextual Info: BLF4G10LS-160 UHF power LDMOS transistor Rev. 01 — 19 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF4G10LS-160 ACPR400 ACPR600 BLF4G10LS-160 transistor 2N2222 SMD capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 GP 0,47K w2 smd transistor ACPR1980	PDF
g1 smd transistor Abstract: SMD transistor r24 SMD TRANSISTOR G1 Diode GP 622 3 pin SMD hall sensor g3 smd transistor smd transistor pinout sot23 SMD Transistor nc Contextual Info: ZXBM1015EV1 ZXBM1015EV1 USER GUIDE DESCRIPTION The ZXBM1015EV1 is a demonstration board for evaluating the ZXBM1015 Single Phase Brushless DC Motor Controller. PWM input control, thermistor input control or voltage input control can be selected simply by inserting a jumper.	Original	ZXBM1015EV1 ZXBM1015EV1 ZXBM1015 g1 smd transistor SMD transistor r24 SMD TRANSISTOR G1 Diode GP 622 3 pin SMD hall sensor g3 smd transistor smd transistor pinout sot23 SMD Transistor nc	PDF
BLF6G22LS-100 Abstract: RF35 TRANSISTOR SMD BV Contextual Info: BLF6G22LS-100 Power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance	Original	BLF6G22LS-100 BLF6G22LS-100 RF35 TRANSISTOR SMD BV	PDF
C5750X7R1H106M Abstract: BLF6G20LS-140 C4532X7R1H475M RF35 smd transistor equivalent table Contextual Info: BLF6G20LS-140 Power LDMOS transistor Rev. 01 — 27 February 2009 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance	Original	BLF6G20LS-140 BLF6G20LS-140 C5750X7R1H106M C4532X7R1H475M RF35 smd transistor equivalent table	PDF
transistor K 1352 Abstract: C5750X7R1H106M TRANSISTOR K 135 VJ1206Y104KXB 30RF35 BLF6G27-135 BLF6G27LS-135 C4532X7R1H475M RF35 722 smd transistor Contextual Info: BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 — 26 May 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance	Original	BLF6G27-135; BLF6G27LS-135 ACPR885k ACPR1980k IS-95 BLF6G27-135 BLF6G27LS-135 transistor K 1352 C5750X7R1H106M TRANSISTOR K 135 VJ1206Y104KXB 30RF35 C4532X7R1H475M RF35 722 smd transistor	PDF
transistor 9575 Abstract: BLF6G10-160RN BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1 Contextual Info: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 01 — 20 January 2009 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN transistor 9575 BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1	PDF
smd transistor 3400 Abstract: smd transistor equivalent table J412 - TRANSISTOR SMD BLF6G38S-25 C5750X7R1H106M cdma QPSK modulation Walsh pilot BLF6G38-25 C4532X7R1H475M RF35 722 smd transistor Contextual Info: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 02 — 23 December 2008 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance	Original	BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 smd transistor 3400 smd transistor equivalent table J412 - TRANSISTOR SMD C5750X7R1H106M cdma QPSK modulation Walsh pilot C4532X7R1H475M RF35 722 smd transistor	PDF
BLF6G22LS-100 Abstract: RF35 Contextual Info: BLF6G22LS-100 Power LDMOS transistor Rev. 3 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance	Original	BLF6G22LS-100 BLF6G22LS-100 RF35	PDF
C5750X7R1H106M Abstract: 30RF35 Contextual Info: BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 01 — 11 November 2008 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1.	Original	BLF6G38-100; BLF6G38LS-100 ACPR885k ACPR1980k BLF6G38-100 6G38LS-100 C5750X7R1H106M 30RF35	PDF
transistor d 1302 Abstract: smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component Contextual Info: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 02 — 18 June 2009 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance	Original	BLS6G2933S-130 BLS6G2933S-130 transistor d 1302 smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component	PDF
amplifier TRANSISTOR 12 GHZ Abstract: smd transistor w J 3 58 smd transistor equivalent table smd transistor 927 Contextual Info: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 01 — 11 December 2008 Objective data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance	Original	BLS6G2933S-130 BLS6G2933S-130 amplifier TRANSISTOR 12 GHZ smd transistor w J 3 58 smd transistor equivalent table smd transistor 927	PDF
J122 SMD TRANSISTOR Abstract: BLC6G22L-40BN/2 800B BLF6G22L-40BN Contextual Info: BLF6G22L-40BN Power LDMOS transistor Rev. 1 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.	Original	BLF6G22L-40BN J122 SMD TRANSISTOR BLC6G22L-40BN/2 800B BLF6G22L-40BN	PDF

250 B 340 smd Transistor Abstract: smd JH transistor BLA0912-250 T491D476M020AS Contextual Info: BLA0912-250 Avionics LDMOS transistor Rev. 3 — 26 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the	Original	BLA0912-250 OT502A 103itions 250 B 340 smd Transistor smd JH transistor BLA0912-250 T491D476M020AS	PDF
T491D226M020AS Abstract: T491D476M020AS smd JH transistor Contextual Info: BLA0912-250R Avionics LDMOS power transistor Rev. 01 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the	Original	BLA0912-250R OT502A BLA0912-250R T491D226M020AS T491D476M020AS smd JH transistor	PDF
BLF6G20-110 Abstract: BLF6G20LS-110 RF35 Contextual Info: BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor Rev. 03 — 13 January 2009 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance	Original	BLF6G20-110; BLF6G20LS-110 BLF6G20-110 BLF6G20LS-110 RF35	PDF
RF35 Abstract: Multilayer Ceramic Capacitor 10 uf TDK smd transistor F4 Contextual Info: BLF6G10-45 Power LDMOS transistor Rev. 01 — 3 February 2009 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.	Original	BLF6G10-45 BLF6G10-45 RF35 Multilayer Ceramic Capacitor 10 uf TDK smd transistor F4	PDF
VARISTOR S10k275 Abstract: IRFB3206 DIODE NU 1N4148smd full bridge smps resonance snubber NCP1397 NCP1397A ferrite transformer atx power supply FUSE SH22,5A capacitor 1000 MF Contextual Info: AND8460/D Implementing a 12 V / 240 W Power Supply with the NCP4303B, NCP1605 and NCP1397B http://onsemi.com Prepared by: Roman Stuler, Jaromir Uherek and Ivan Seifert APPLICATION NOTE ON Semiconductor Overview height of only 35 mm. An overview of the entire SMPS	Original	AND8460/D NCP4303B, NCP1605 NCP1397B NCP4303B VARISTOR S10k275 IRFB3206 DIODE NU 1N4148smd full bridge smps resonance snubber NCP1397 NCP1397A ferrite transformer atx power supply FUSE SH22,5A capacitor 1000 MF	PDF
2360d Abstract: BLF6G10-135RN BLF6G10LS-135RN RF35 SMD TRANSISTOR LIST Contextual Info: BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 01 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF6G10-135RN; BLF6G10LS-135RN BLF6G10-135RN 10LS-135RN 2360d BLF6G10LS-135RN RF35 SMD TRANSISTOR LIST	PDF
J122 SMD TRANSISTOR Contextual Info: BLF6G22LS-40BN Power LDMOS transistor Rev. 1 — 28 June 2012 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit.	Original	BLF6G22LS-40BN J122 SMD TRANSISTOR	PDF
RF35 Abstract: 1961 30 TRANSISTOR Contextual Info: BLF6G22-180RN; BLF6G22LS-180RN Power LDMOS transistor Rev. 01 — 20 November 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance	Original	BLF6G22-180RN; BLF6G22LS-180RN BLF6G22-180RN 22LS-180RN RF35 1961 30 TRANSISTOR	PDF
BLF6G10-200RN Abstract: BLF6G10LS-200RN RF35 vj1206y224kxb Contextual Info: BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 01 — 19 January 2009 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 688 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF6G10-200RN; BLF6G10LS-200RN BLF6G10-200RN 10LS-200RN BLF6G10LS-200RN RF35 vj1206y224kxb	PDF
RF35 Contextual Info: BLF6G20-180RN; BLF6G20LS-180RN Power LDMOS transistor Rev. 01 — 17 November 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance	Original	BLF6G20-180RN; BLF6G20LS-180RN BLF6G20-180RN 20LS-180RN RF35	PDF

TRANSISTOR SMD W2 Search Results

TRANSISTOR SMD W2 Result Highlights (5)

TRANSISTOR SMD W2 Datasheets Context Search

transistor SMD Lf

capacitor 2200 uF

transistor 2N2222 SMD

g1 smd transistor

BLF6G22LS-100

C5750X7R1H106M

transistor K 1352

transistor 9575

smd transistor 3400

BLF6G22LS-100

C5750X7R1H106M

transistor d 1302

amplifier TRANSISTOR 12 GHZ

J122 SMD TRANSISTOR

250 B 340 smd Transistor

T491D226M020AS

BLF6G20-110

RF35

VARISTOR S10k275

2360d

J122 SMD TRANSISTOR

RF35

BLF6G10-200RN

RF35