TRANSISTOR SMD W2 Search Results

VARACTOR diode POINT color code table

Abstract: smd transistor w20 tunnel diode General Electric germanium photodiode PIN IEC747-5 circuit diagram of luminous metal detector GaAs tunnel diode photodiode germanium tunnel diode GaAs germanium diode smd
Contextual Info: Vishay Semiconductors Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The type number of semiconductor devices consists of: Two letters followed by a serial number B For example: Material P W20

C5750X7R1H106M

Abstract: BLF6G20LS-140 C4532X7R1H475M RF35 smd transistor equivalent table
Contextual Info: BLF6G20LS-140 Power LDMOS transistor Rev. 01 — 27 February 2009 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance

Contextual Info: BLF8G22LS-160BV Power LDMOS transistor Rev. 1 — 25 June 2012 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2000 MHz to 2200 MHz.

Contextual Info: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance

Contextual Info: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 4 — 23 September 2013 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.

smd transistor 3400

Abstract: smd transistor equivalent table J412 - TRANSISTOR SMD BLF6G38S-25 C5750X7R1H106M cdma QPSK modulation Walsh pilot BLF6G38-25 C4532X7R1H475M RF35 722 smd transistor
Contextual Info: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 02 — 23 December 2008 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance

Contextual Info: BLF6G10LS-160 Power LDMOS transistor Rev. 01 — 29 September 2008 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance

BLF645

Abstract: C4532X7R1E475MT020U RF35
Contextual Info: BLF645 Broadband power LDMOS transistor Rev. 01 — 27 January 2010 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The

transistor bd139

Abstract: chip die npn transistor BLV862
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV862 UHF linear push-pull power transistor Product specification Supersedes data of 1997 Jan 08 1997 Oct 14 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV862 PINNING FEATURES • Double stage internal input and output matching

Contextual Info: BLF10M6160; BLF10M6LS160 Power LDMOS transistor Rev. 1 — 24 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance

smd dual transistor f1

Abstract: SMD W4 Transistor w3 smd transistor sgs c64 transistor h8 sot23 diode zener Multicomp SOT W3 SMD transistor 2010 smd resistor m20 sot23 transistor schematic diagram phono to usb
Contextual Info: 6100-EV1 Customer Board Schematic & Layout DOC TYPE: SCHEMATIC AND LAYOUT BOARD REFERENCE: 6100-EV1-REV1 BOARD TYPE: Customer Main Board WOLFSON DEVICE S : WM8751, WM8955 and WM8955B DATE: July 2010 DOC REVISION REVISION: 12 1.2 Customer Information 1 July 2010, Rev 1.2

2222 031 capacitor philips

Abstract: transistor bd139 BLV862 BD139 philips power transistor bd139 AN98014 smd transistor Nr 912 smd transistor SMD transistor L17 UT70-25
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLV862 UHF linear push-pull power transistor Product specification Supersedes data of 1997 Oct 14 1999 Jun 25 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV862 PINNING FEATURES

RF35

Abstract: Multilayer Ceramic Capacitor 10 uf TDK smd transistor F4
Contextual Info: BLF6G10-45 Power LDMOS transistor Rev. 01 — 3 February 2009 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

smd 501 transistor

Contextual Info: BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 01 — 15 December 2009 Objective data sheet 1. Product profile 1.1 General description The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using

Contextual Info: BLF6G22LS-40BN Power LDMOS transistor Rev. 1 — 28 June 2012 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Contextual Info: BLF6G10-45 Power LDMOS transistor Rev. 02 — 20 January 2010 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

Contextual Info: BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 2 — 24 October 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance

4G10

Abstract: BLF4G10-120 BLF4G10S-120 ACPR400 ACPR600
Contextual Info: BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance

Contextual Info: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance

Contextual Info: BLF2425M6L180P; BLF2425M6LS180P Power LDMOS transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz.

Contextual Info: BLF8G22LS-270 Power LDMOS transistor Rev. 1 — 12 October 2012 Objective data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance

transistor smd ba rn

Abstract: smd ya transistor ferroxcube 4322 Variable capacitor
Contextual Info: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BLV2048 UHF push-pull power transistor 1998 Apr 07 Preliminary specification Supersedes data of 1997 Oct 14 File under Discrete Semiconductors, SC19a Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors

BLL6H1214-500

Abstract: 800B
Contextual Info: BLL6H1214-500 LDMOS L-band radar power transistor Rev. 01 — 20 January 2009 Objective data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information

Contextual Info: BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 2 — 16 September 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W