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    smd transistor 3400 Datasheets

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    Part ECAD Model Manufacturer Description Download Buy
    BD9G102G-LB ROHM Semiconductor 6V to 42V, 0.5A 1ch Simple Buck Converter Integrated FET (Industrial Grade) Visit ROHM Semiconductor
    BD9G341AEFJ ROHM Semiconductor 12V to 76V, Buck switching regulator with integrated 150mΩ power MOSFET Visit ROHM Semiconductor
    BD9G101G ROHM Semiconductor Step-down Switching Regulators with Built-in Power MOSFET Visit ROHM Semiconductor
    BD9E104FJ ROHM Semiconductor 7.0 V to 26.0 V Input, 1 A Integrated MOSFET Single Synchronous Buck DC/DC Converter Visit ROHM Semiconductor
    BD9A600MUV ROHM Semiconductor 2.7V to 5.5V Input, 6A Integrated MOSFET, Single Synchronous Buck DC/DC Converter Visit ROHM Semiconductor
    BD9G341AEFJ-LB ROHM Semiconductor 12V to 76V, Buck switching regulator with integrated 150mΩ power MOSFET (Industrial Grade) Visit ROHM Semiconductor

    smd transistor 3400 Datasheets Context Search

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    2013 - Not Available

    Abstract: No abstract text available
    Text: Semiconductors Power LDMOS transistor 7.5 Graphical data 7.5.1 CW VDS = 28 V; IDq = 3400 mA. VDS = , Semiconductors Power LDMOS transistor 7.5.2 Pulsed CW VDS = 28 V; IDq = 3400 mA. VDS = 28 V; IDq = , Power LDMOS transistor 7.5.3 IS-95 VDS = 28 V; IDq = 3400 mA. VDS = 28 V; IDq = 3400 mA. (1 , BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 1 — 6 June 2013 Preliminary data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved


    Original     		PDF BLF8G20LS-400PV; BLF8G20LS-400PGV BLF8G20LS-400PV LS-400PGV

    2013 - Not Available

    Abstract: No abstract text available
    Text: Semiconductors Power LDMOS transistor 7.5 Graphical data 7.5.1 CW VDS = 28 V; IDq = 3400 mA. VDS = , Semiconductors Power LDMOS transistor 7.5.2 Pulsed CW VDS = 28 V; IDq = 3400 mA. VDS = 28 V; IDq = , Power LDMOS transistor 7.5.3 IS-95 VDS = 28 V; IDq = 3400 mA. VDS = 28 V; IDq = 3400 mA. (1 , BLF8G20LS-400P(G)V NXP Semiconductors Power LDMOS transistor VDS = 28 V; IDq = 3400 mA. VDS = 28 , BLF8G20LS-400P(G)V NXP Semiconductors Power LDMOS transistor VDS = 28 V; IDq = 3400 mA. VDS = 28


    Original     		PDF BLF8G20LS-400PV; BLF8G20LS-400PGV BLF8G20LS-400PV LS-400PGV

    2014 - transistor SMD g 28

    Abstract: No abstract text available
    Text: NXP Semiconductors Power LDMOS transistor 7.5.2 IS-95 VDS = 28 V; IDq = 3400 mA. VDS = 28 , NXP Semiconductors Power LDMOS transistor VDS = 28 V; IDq = 3400 mA. VDS = 28 V; IDq = 3400 , transistor VDS = 28 V; IDq = 3400 mA. VDS = 28 V; IDq = 3400 mA. (1) f = 1805 MHz (1) f = 1805 , BLF8G20LS-400P(G)V NXP Semiconductors Power LDMOS transistor VDS = 28 V; IDq = 3400 mA. (1) f = , BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 3 — 3 June 2014 Product data


    Original     		PDF BLF8G20LS-400PV; BLF8G20LS-400PGV BLF8G20LS-400PV LS-400PGV transistor SMD g 28

    2013 - BLF6G38S-25

    Abstract: transistor equivalent table BDS3/3/4.6-4S2 BDS3/3/4.6-4S2-Z
    Text: ferrite SMD bead SMD resistor SMD resistor Table 10. f MHz 3400 3450 3500 3550 3600 Value 20 9.1 Remarks , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 3 - 11 March 2013 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance at , (MHz) 3400 to 3600 VDS (V) 28 PL(AV) (W) 4.5 Gp (dB) 15 D (%) 24 ACPR885k ACPR1980k (dBc


    Original     		PDF BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 transistor equivalent table BDS3/3/4.6-4S2 BDS3/3/4.6-4S2-Z

    2008 - TRANSISTOR j412

    Abstract: J412 - TRANSISTOR SMD BLF6G38S-25
    Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 01 - 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance at , (MHz) 3400 to 3600 VDS (V) 28 PL(AV) (W) 4.5 Gp (dB) 15 D (%) 24 ACPR885k ACPR1980k (dBc , probability on the CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 3400 MHz, 3500 MHz and 3600 MHz, a


    Original     		PDF BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 TRANSISTOR j412 J412 - TRANSISTOR SMD

    2008 - smd transistor 3400

    Abstract: smd transistor equivalent table J412 - TRANSISTOR SMD BLF6G38S-25 C5750X7R1H106M cdma QPSK modulation Walsh pilot BLF6G38-25 C4532X7R1H475M RF35 722 smd transistor
    Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 02 - 23 December 2008 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance , ) (dBc) 3400 to 3600 28 4.5 15 24 -45[2] -61[2] [1] Single carrier IS-95 with , MHz) at a frequency of 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V and an IDq of 225 mA


    Original     		PDF BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 smd transistor 3400 smd transistor equivalent table J412 - TRANSISTOR SMD C5750X7R1H106M cdma QPSK modulation Walsh pilot C4532X7R1H475M RF35 722 smd transistor

    2008 - C5750X7R1H106M

    Abstract: 30RF35
    Text: BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 01 - 11 November 2008 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance Typical RF , ) PL(p) Gp D (MHz) 1-carrier N-CDMA[1] (V) (W) (W) (dB) (%) 3400 to 3600 28 , % probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz and


    Original     		PDF BLF6G38-100; BLF6G38LS-100 ACPR885k ACPR1980k BLF6G38-100 6G38LS-100 C5750X7R1H106M 30RF35

    2008 - transistor BV-1 501

    Abstract: smd 501 transistor C5750X7R1H106M 30RF35 BLF6G38-50 BLF6G38LS-50 RF35 VJ1206Y104KXB
    Text: BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 01 - 12 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance , (M)[1] Gp (MHz) Mode of operation (V) (W) (W) (dB) (%) (dBc) (dBc) 3400 to , frequency of 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V, an IDq of 450 mA, a power gain of


    Original     		PDF BLF6G38-50; BLF6G38LS-50 ACPR885k ACPR1980k BLF6G38-50 BLF6G38LS-50 transistor BV-1 501 smd 501 transistor C5750X7R1H106M 30RF35 RF35 VJ1206Y104KXB

    2011 - Not Available

    Abstract: No abstract text available
    Text: BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 2 — 24 October 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance Typical RF , ) PL(M) [1] Gp (MHz) Mode of operation (V) 3400 to 3600 28 D (W) (W) (dB) (% , is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V and an IDq


    Original     		PDF BLF6G38-100; BLF6G38LS-100 ACPR885k ACPR1980k BLF6G38-100 6G38LS-100

    2011 - Not Available

    Abstract: No abstract text available
    Text: BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 2 - 24 October 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance Typical RF performance at , [3] (dB) (%) 3400 to 3600 28 21.5 47.5[3] PL(M) stands for peak output power. Single , probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz and 3600 MHz, a


    Original     		PDF BLF6G38-100; BLF6G38LS-100 ACPR885k ACPR1980k BLF6G38-100 6G38LS-100

    2014 - Not Available

    Abstract: No abstract text available
    Text: Semiconductor Transistor MTF Median Time to Failure PAR Peak-to-Average Ratio SMD Surface , BLF8G38LS-75V Power LDMOS transistor Rev. 3 — 1 July 2014 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF , ) (mA) (V) (W) 1-carrier W-CDMA 3400 to 3800 600 30 20 [1] IDq VDS PL


    Original     		PDF BLF8G38LS-75V

    2009 - TRANSISTOR J601

    Abstract: gp816 RF35 J2396 J249
    Text: BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor Rev. 01 - 3 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance RF performance at Tcase , ) (MHz) 1-carrier N-CDMA[1] f (V) 3400 to 3600 28 [1] Single carrier N-CDMA with pilot , Substances (RoHS) BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor 1.3


    Original     		PDF BLF6G38-10; BLF6G38-10G ACPR885k ACPR1980k BLF6G38-10 BLF6G38-10G TRANSISTOR J601 gp816 RF35 J2396 J249

    2014 - Not Available

    Abstract: No abstract text available
    Text: BLF8G38LS-75V Power LDMOS transistor Rev. 2 — 9 January 2014 Preliminary data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance , signal f (MHz) (mA) (V) (W) 1-carrier W-CDMA 3400 to 3800 600 30 20 [1 , video bandwidth Designed for broadband operation ( 3400 MHz to 3800 MHz) Lower output capacitance for


    Original     		PDF BLF8G38LS-75V

    2010 - 30RF35

    Abstract: BLF6G38-50 BLF6G38LS-50 C5750X7R1H106M RF35 VJ1206Y104KXB
    Text: BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 02 - 1 June 2010 Product data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance , ) ACPR885k (dBc) ACPR1980k (dBc) Mode of operation f (MHz) 1-carrier N-CDMA[2] 3400 to 3600 28 9 , 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V, an IDq of 450 mA, a power gain of 14 dB, a


    Original     		PDF BLF6G38-50; BLF6G38LS-50 ACPR885k ACPR1980k BLF6G38-50 30RF35 BLF6G38LS-50 C5750X7R1H106M RF35 VJ1206Y104KXB

    2013 - Not Available

    Abstract: No abstract text available
    Text: LDMOS transistor 7.3 Graphical data 7.3.1 Pulsed CW VDS = 30 V; IDq = 600 mA. (1) f = 3400 MHz , LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor PAR Peak-to-Average Ratio SMD , BLF8G38LS-75V Power LDMOS transistor Rev. 1 — 4 November 2013 Objective data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance


    Original     		PDF BLF8G38LS-75V

    2010 - Not Available

    Abstract: No abstract text available
    Text: BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 02 — 1 June 2010 Product data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance , (%) ACPR885k (dBc) ACPR1980k (dBc) Mode of operation f (MHz) 1-carrier N-CDMA[2] 3400 to 3600 , frequency of 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V, an IDq of 450 mA, a power gain of


    Original     		PDF BLF6G38-50; BLF6G38LS-50 ACPR885k ACPR1980k BLF6G38-50

    smd 8550 transistor

    Abstract: smd transistor 3400 365-1447 8550 smd transistor nd250 OPIA405CTU 365-1460-2-ND OPIA400ATR 1421 smd 1034
    Text: output Schottky transistor . Forward DC Current (mA) 40 40 40 50 Reverse DC DC Current , /4 5/4 5/4 5/4 2/3 2/3 2/3 2/3 0.3/0.3 0.4/0.3 7/2 10/5 45/45 SMD SMD SMD DIP SSOP SSOP SSOP SSOP SMD SMD SMD DIP SSOP SSOP SSOP SSOP SSOP SSOP SSOP SMD SMD SMD DIP SSOP SSOP SSOP SSOP SMD SMD SMD DIP SSOP SSOP SSOP SSOP SMD SMD SMD DIP SSOP DIP DIP , -ND .47 34.00 78.63 365-1437-ND .47 34.00 78.63 365-1417-1-ND .78 50.40 108.00 365-1417-2


    Original     		PDF OPI1264 OPI155 365-1031-ND 365-1032-ND 365-1033-ND 365-1034-ND OPIA802DTU OPIA803DTU OPIA800DTU OPIA801DTU smd 8550 transistor smd transistor 3400 365-1447 8550 smd transistor nd250 OPIA405CTU 365-1460-2-ND OPIA400ATR 1421 smd 1034

    smd led 7020

    Abstract: RZ4855HDPO RZ4825HAPO RZ4825HDPO smd 8550 transistor RZ4855HAPO Triac 4050 4825-AA12 three phase triac control 300 amp 4850AA12
    Text: Switching cDirect Copper Bonding and SMD Technology cZero Switching for Resistive/Motor Loads cNo Internal , RM1A23D25 42-265 25 A 30.00 28.50 27.00 251-2010 251-0091 RM1A23D50 42-265 50 A 34.00 32.30 30.60 , RS1A48D40 42-530 40 A 34.00 32.30 30.60 20-265 VAC/DC Control DC Switching Relay 251-1057 RZ4825HAPO 12-530 V 25 A 185.00 175.75 166.50 251-1059 RZ4855HAPO 12-530 V 55 A 207.00 196.65 186.30 Transistor


    Original     		PDF RHS90 RHS112 RHS100* 2425-AA06 RHS301* 2450-AA06 4825-AA12 RHS301F115C* RHS301 4850-AA12 smd led 7020 RZ4855HDPO RZ4825HAPO RZ4825HDPO smd 8550 transistor RZ4855HAPO Triac 4050 three phase triac control 300 amp 4850AA12

    2012 - ROGERS DUROID

    Abstract: BLS6G2735L-30
    Text: BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 3 - 24 September 2012 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar , -30; BLS6G2735LS-30 S-band LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description , 2 of 17 NXP Semiconductors BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor 5 , BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor 7. Application information 7.1 Circuit information


    Original     		PDF BLS6G2735L-30; BLS6G2735LS-30 BLS6G2735L-30 6G2735LS-30 ROGERS DUROID

    2012 - Not Available

    Abstract: No abstract text available
    Text: BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 2 — 4 September 2012 Preliminary data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar , transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline , Semiconductors BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor 5. Thermal characteristics Table 5 , -30; BLS6G2735LS-30 NXP Semiconductors S-band LDMOS transistor 7. Application information 7.1 Circuit


    Original     		PDF BLS6G2735L-30; BLS6G2735LS-30 BLS6G2735L-30 6G2735LS-30

    2012 - CGH35060

    Abstract: No abstract text available
    Text: nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high , pulsed amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package , 3250 3300 3350 3400 3450 3500 0% 3550 Frequency (MHz) Copyright © 2012 Cree , Frequency (MHz) 3100 3200 3300 3400 3500 1 Z Source 3.6 -j13.5 3.6 -j12.8 3.5 -j12.1 3.5 -j11.4 3.3 , are not source and load pull data derived from the transistor . Electrostatic Discharge (ESD


    Original     		PDF CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2 CGH35060

    2013 - Not Available

    Abstract: No abstract text available
    Text: nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high , pulsed amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package , 3350 3400 3450 3500 0% 3550 Frequency (MHz) Copyright © 2013-2014 Cree, Inc. All , 7.1 -j7.7 3300 3.5 -j12.1 6.5 -j6.8 3400 3.5 -j11.4 6.0 -j5.9 3500 3.3 -j10.7 , transistor . 1 Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test


    Original     		PDF CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2

    2005 - NDH2412S

    Abstract: NDH2415S NDH4812S NDH4815S A 1908 transistor
    Text: use of ceramic capacitors and a ceramic substrate, and SMD construction, provide genuine high , transistor , and the switch off mechanism for the NDH works by forward biasing this NPN transistor . If the pin , . 3400 E Britannia Drive, Tucson, Arizona 85706, USA Tel: +44 (0)1908 615232 Fax: +44 (0)1908 617545


    Original     		PDF NDH2412S NDH2415S NDH4812S NDH4815S NDH2412S NDH2415S NDH4812S NDH4815S A 1908 transistor

    2013 - Not Available

    Abstract: No abstract text available
    Text: nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high , pulsed amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package , 3350 3400 3450 3500 0% 3550 Frequency (MHz) Copyright © 2013 Cree, Inc. All rights , 3.5 -j12.1 6.5 -j6.8 3400 3.5 -j11.4 6.0 -j5.9 3500 3.3 -j10.7 5.6 -j5.1 Note , demonstration circuit and are not source and load pull data derived from the transistor . 1 Electrostatic


    Original     		PDF CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2

    Not Available

    Abstract: No abstract text available
    Text: Thermistors SMD Q Meggitt Citec n.t.c. chip thermistor Key features • 12:06 or 08:05 packages < suitable for bonding or pick and place • solvent resistant coating • temperature range , 3300 3300 3400 3400 4100 3400 4100 4100 3500 3750 3750 3950 4000 4000 4000 4100 4100 , mounting directly onto 80 150 800 1K7 1K7 2K 7 2K 7 4K 7 47K 2750 2800 3300 3400 4100 3400 4100 3500 4000 O o o o o o o o o o o o o o o o o o o o o o o o o


    OCR Scan     		PDF 500KQ -2023157-2523157-2523157-3023157-502315To F0444
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