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BLF6G22LS-100
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NXP Semiconductors
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 29 %; Frequency band: 2110 - 2170 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502B ; Power gain: 18.5 dB | 
Original | 
PDF
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72.31KB | 
11 | 
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BLF6G22LS-100
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NXP Semiconductors
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BLF6G22LS-100 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power | 
Original | 
PDF
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121.42KB | 
12 | 
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BLF6G22LS-100,112
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Ampleon USA
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.2DB SOT502B | 
Original | 
PDF
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896.44KB | 
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BLF6G22LS-100,118
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Ampleon USA
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.2DB SOT502B | 
Original | 
PDF
 | 
896.44KB | 
 | 
| 
BLF6G22LS-100,112
 | 
 | 
NXP Semiconductors
 | 
Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 29 %; Frequency band: 2110 - 2170 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502B ; Power gain: 18.5 dB; Package: SOT502B (LDMOST); Container: Blister pack | 
Original | 
PDF
 | 
72.31KB | 
11 | 
| 
BLF6G22LS-100,112
 | 
 | 
NXP Semiconductors
 | 
BLF6G22LS-100 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power | 
Original | 
PDF
 | 
121.42KB | 
12 | 
| 
BLF6G22LS-100,118
 | 
 | 
NXP Semiconductors
 | 
Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 29 %; Frequency band: 2110 - 2170 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502B ; Power gain: 18.5 dB; Package: SOT502B (LDMOST); Container: Reel Pack, SMD, 13" | 
Original | 
PDF
 | 
72.31KB | 
11 | 
| 
BLF6G22LS-100,118
 | 
 | 
NXP Semiconductors
 | 
BLF6G22LS-100 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power | 
Original | 
PDF
 | 
121.42KB | 
12 |