TRANSISTOR SE 135 Search Results

TRANSISTOR SE 135

Abstract: KSA1625
Contextual Info: KSA1625 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCH TO-92 • High Breakdown Voltage • High Speed Switching ABSOLUTE MAXIMUM RATINGS C h a ra cte ristic T a “ 2 5 C Sym bol Collector B ase Voltage Collector Emitter Voltage Emitter B a se Voltage B a se Current

BUK426-100A

Abstract: BUK426-100B BUK426-100
Contextual Info: N AMER PHILIPS/DISCRETE 5 SE D • D020245. T PowerMOS transistor ■ BUK426-100A BUK426-100B T - 3 9 -/7 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope, th e device is intended for use in Switched Mode Power Supplies

AF109

Abstract: AF109R Q60106-X109-R1 small signal germanium transistor AF 109 R
Contextual Info: 2SC D • ÛSBSbOS QQ04Q53 □ « S I E G AF109 R PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF 04053 D " T 2- 3 for AGC input stages up to 260 MHz / ^ 7 A F 109 R is a germanium PNP RF m esa transistor in TO 7 2 ca se 18 A 4 DIN 4 18 76 . T he terminals are electrically insulated from the case.

TRANSISTOR SE 135

Abstract: transistor ark 05
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 G EN ER A L PU RPO SE TRANSISTO R SO T-23 ABSO LU TE MAXIMUM RATINGS TA=25t: Characteristic Sym bol Collector-Base Voltage Coliector-Emttter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

Contextual Info: * FAIRCHII.D SE M IC O N D U C TO R February 1997 i NDH833N N-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOT -8 N-Channel enhancement mode power field • 7.1 A, 20 V. effect transistors are produced using Fairchild's proprietary,

Contextual Info: TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA <DISCRETE/OPTO fä h ih a 99D 16778 D"T:'3>9-I3 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 1 5 3 SILICON N CHANNEL MOS TYPE TECHNICAL DATA flV M O SE) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS

2N341

Abstract: MIL-S-1950U a1u transistor XLO6 2N3413 a1u marking 6 A1u marking transistor c 3206
Contextual Info: M IL -S -19500/31C 1 June 1972 SUPERSEDING M IL -S -1 9 5 0 0 /3 1 B 21 Ja n u ary 1965 MILITARY SPECIFICA TION SEMICONDUCTOR DEVICE. TRANSISTOR, NPN. SILICON, LOW-POWER T Y PE 2N341 T hia sp e c ific a tio n is approved fo r u se by all D e p a rt­ m e n ts and A gencies of th e D e p a rtm e n t of D efen se?-

2N404

Abstract: 2N404 transistor OC 74 germanium transistor germanium transistor 2n404a 2N404A J971 2N404 JAN
Contextual Info: MIL -S-19500/20C 22 March .1971 _ SUPERSEDING MIL -S -195 0 0 /2 OB 23 October 1964 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PN P, GERMANIUM, LOW-POWER TYPES 2N404 AND 2N404A T his sp ecification is mandatory for usg by all D ep artm ents and A gen cies of the Departm ent of D efen se .

transistor smd z8

Abstract: RF NPN POWER TRANSISTOR C 10-50 GHZ SMD Transistor z6 smd transistor z8 smd transistor Z10 transistor 6 pin SMD Z2 Z808 z202 3 pin TRIMMER capacitor 6 pin TRANSISTOR SMD Z8
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6408 NPN Silicon RF Pow er Transistor D e sig n e d fo r PCN and PCS ba se s ta tio n a p p lic a tio n s , th e M R F 6 4 0 8 incorporates high value em itter ballast resistors, gold metallizations and offers

Contextual Info: MOTOROLA Order this document by H11AV1/D SEMICONDUCTOR TECHNICAL DATA ® TO VDE UL CSA SE TI SEM KO DEM KO NEMKO BABT H11AV1,A* H11AV2,A [C TR = 100% Min] G lo b a l O p to iso la t o r 6-Pin DIP Optoisolators Transistor Output [C TR = 50% Min] ’ M otorola Preferred Devices

TT 2188 transistor

Abstract: Transistor TT 2176 2SC2172 TRANSISTOR TT 2190 TRANSISTOR TT 2188 tt 2194 transistor k 316 TRANSISTOR K 2191 transistor tt 2180
Contextual Info: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2SC1474

Abstract: 2SC897 2SC1403 2SA743B 2SC1116 2SC1445 2SC1402 2sc1419 2sc1826 2SC1115
Contextual Info: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2SA850

Abstract: TRANSISTOR 2SA850 1729H 2SC1721 2SA854 2SA933
Contextual Info: - 5 - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2SC1961

Abstract: transistor c 301b japanese transistor manual 1981 2SA771 138D 2SA770 Transistor Manual 1981
Contextual Info: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

TA 2092 N

Abstract: 2SA9411 2SA942 2SC2082 2093H
Contextual Info: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

NEC PS1001

Abstract: PS1001 lb30
Contextual Info: N E C ELECTRONICS INC 3GE D • b457555 0G3it.3b 1 ■ PH O TO O T~H1'#3 C O U P LE R PS1001 PHO TO C O U PLER IN D U S T R IA L U SE DESCRIPTION Tha PS 1001 is an optically coupled isolator containing a GaAs light emitting diode and an NPN sillicon photo transistor.

ns8002

Abstract: 2sc710 transistor transistor 2SC710 2SC710 C 2SA561 2SC710 2SC710-15 138B LT 735 2SA562
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2N3055

Abstract: 2N3773 2SB766 2SB767 2SB772 2SB775 2SD867 2N3773 transistor
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

Transistor 2sc1915

Abstract: 2SC1951 2SC1586 2SC1915 2SC1762 2SC1811 2SC1584 2SC1940 Tbb 38 138B
Contextual Info: - 5 - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

transistor 1247a

Abstract: 1207B 2SC911 NFA 222 2SC1271A 2SC911A 1711A FJ 403E 2SA872A 2SC1207A
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2SD588

Abstract: 2sd586 transistor 2sD586 2sd588 data 2SD587 transistor 2SD587 2SD593 2SB601 2SD560 2SD571
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2SA205

Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2SA138

Abstract: st28c ge 142 2S160 RBL 43 P ST28B 2S156 ST28A RBL 43 P TRANSISTOR 2S153
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

transistor tt 2206

Abstract: 2sc2202 2sc2202 transistor TT 2206 TT 2206 transistor hr 2206 cp 2206 CP 2207 7c 138D
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English