2SA205 Search Results

2SA2058

Contextual Info: 2SA2058 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2058 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.2 A • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max)

2SA20

Abstract: 2SA2056
Contextual Info: 2SA2056 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2056 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA2057 Silicon PNP epitaxial planar type Unit: mm Power supply for audio & visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters 4.6±0.2 9.9±0.3

2SA2059

Contextual Info: 2SA2059 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2059 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A · Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max)

Contextual Info: 2SA2059 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2059 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max)

Contextual Info: 2SA2056 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2056 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Industrial Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max)

2SA2056

Contextual Info: 2SA2056 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2056 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A · Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max)

2SA2059

Contextual Info: 2SA2059 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2059 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max)

2SA2058

Contextual Info: 2SA2058 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2058 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.2 A · Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max)

Contextual Info: 2SA2058 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2058 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.2 A • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max)

2SA205

Abstract: 2SA205H 2SA205S MMBT4403 2SA20
Contextual Info: HIROO TRANSISTOR 2SA205 MMBT4403 General Purpose Amplifier PNP - 40V, - 0.5A • Features ● Collector current to 500mA Units: mm ■ Schematic Diagram 2.9±0.1 SOT-23 3 C 0.6 0.425±0.075 3 2 1 E 2.4±0.35 1.2±0.2 2 B 1 1.9±0.2 0.1 1.2±0. 2 ■ Ordering Information

2SA2056

Contextual Info: 2SA2056 東芝トランジスタ シリコンPNPエピタキシャル形 2SA2056 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。

2SC5734K

Abstract: 2sc5917 2SC5734 2SA2054
Contextual Info: Excellence in Electronics 2005 Ver.1 T ransistor New Products Pari No. B V ceo lc Ip N PN M [A] [A] 2SA2048K 2SC5730K 30 1 2 2SA2054K 2SC5734K 90 0.5 1 Package SMT3 ^ Pc=0.2W " PNP Pari No. Package TSMT3 Pc=0.5W * W Package ATV P c=1W J L 'V BV ceo [V] hF:

Contextual Info: 2SA2058 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2058 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.2 A • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max)

Contextual Info: 2SA2056 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2056 High-Speed Switching Applications DC-DC Converter Applications Unit: mm Strobe Applications • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max)

Contextual Info: 2SA2059 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2059 High-Speed Switching Applications DC-DC Converter Applications Unit: mm Strobe Applications • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max)

2SA2059

Abstract: 2SA20
Contextual Info: 2SA2059 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2059 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max)

smd marking wm

Abstract: 2SA2058 smd marking TF
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial Type 2SA2058 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High DC current gain: hFE = 200 to 500 IC = ?0.2 A 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low collector-emitter saturation voltage: VCE (sat) = ?0.19 V (max)

2SA2059

Contextual Info: 2SA2059 東芝トランジスタ シリコンPNPエピタキシャル形 2SA2059 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 • 単位: mm : hFE = 200~500 IC = −0.5 A 直流電流増幅率が高い。

2SA2058

Contextual Info: 2SA2058 東芝トランジスタ シリコンPNPエピタキシャル形 2SA2058 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 • 単位: mm : hFE = 200~500 IC = −0.2 A 直流電流増幅率が高い。

Contextual Info: SMD Type Product specification 2SA2058 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High DC current gain: hFE = 200 to 500 IC = ?0.2 A 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low collector-emitter saturation voltage: VCE (sat) = ?0.19 V (max)

2SA2058

Contextual Info: 2SA2058 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2058 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.2 A • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max)

2SA2056

Contextual Info: 2SA2056 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2056 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max)

Contextual Info: 2SA2056 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2056 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max)