TRANSISTOR S9012 Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9013M TRANSISTOR DESCRIPTION NPN Epitaxial Silicon Transistor C WBFBP-03B 1.2x1.2×0.5 unit: mm FEATURES High Collector Current. (IC=500mA) Complementary to S9012M

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9012M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES Complementary to S9013M Excellent hFE linearity 1. BASE

2t1 transistor

Abstract: S9012M S9013M
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9012M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES Complementary to S9013M Excellent hFE linearity 1. BASE

S9012M

Abstract: S9013M
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9013M TRANSISTOR DESCRIPTION NPN Epitaxial Silicon Transistor C WBFBP-03B 1.2x1.2×0.5 unit: mm FEATURES High Collector Current. (IC=500mA) Complementary to S9012M

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9012M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES Complementary to S9013M Excellent hFE linearity 1. BASE

transistor s9012

Abstract: S9012 H14-4 S9012 to-92 S9012 TO92 S9012 data sheet S9013 S9013 to-92 s9013 transistor transistor TO-92 S9013
Contextual Info: S9012 PNP EPITAXIAL SILICON TRANSISTOR General Purpose Application TO-92 Collector Current Ic=-500mA Collector Power Dissipation Pc=625mW Complementary to S9013 Ta=25oC ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Value Unit Collector-Base Voltage VCBO

s9013

Abstract: S9013LT1
Contextual Info: S9013LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 Complement to S9012LT1 Collector Current: Ic= 500mA High Total Power Dissipation: Pc=225Mw ABSOLUTE MAXIMUM RATINGS at Ta=25℃

Contextual Info: S9012LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * * TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Complement to S9013LT1 Package:SOT-23 Collector Current :Ic= -500mA High Total Power Dissipation :Pc=225mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃

Contextual Info: S9013S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. _ TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AM PLIFIER * Complement to S9012S * Collector C urrent: Ic=500mA * High Total Power Dissipation : pD=225mW ABSOLUTE MAXIMUM RATINGS a t Tamb=25*C

S9012S

Contextual Info: FORWARD INTERNATIONAL ELECTRONICS LID. S9012S SEMICONDUCTOR _ TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER Packaj^: SOT-23 * Complement to S9013S * Collector Current: Ic=-500mA * High Total Power D issipation: pD=225mW ABSOLUTE MAXIMUM RATINGS at Tan*=25*C

s9013 transistor

Abstract: transistor S9013 S9013 transistor TO-92 S9013 S9013 TO92 data sheet transistor s9013 S9012
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS TA=25℃ unless otherwise noted 3. COLLECTOR

transistor s9012

Abstract: S9012 S9012 equivalent Transistor S9013 S9013 S9012 to-92
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors S9012 TO-92 TRANSISTOR PNP FEATURES Complementary to S9013 z Excellent hFE linearity 1. EMITTER z 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS Ta=25℃ unless otherwise noted 3. COLLECTOR

S9013

Abstract: S9013 TO92
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS TA=25℃ unless otherwise noted 3. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9012 TRANSISTOR PNP FEATURES z Complementary to S9013 z Excellent hFE linearity 1. BASE 2. EMITTER 3. COLLECTOR MARKING: 2T1 MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)

Contextual Info: | FORWARD INTERNATIONAL ELECTRONICS LID. S9013 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. Package: TO-92 * Complement to S9012 * Collector Current: Ic=500mA * High Total Power Dissipation: ptH>25mW

transistor s9012

Abstract: S9012 s9012 transistor S9012 equivalent S9012 SOT-23 S9013 SOT-23 S9013 S9012 2T1 S9012 2T1 SOT-23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9012 TRANSISTOR PNP FEATURES z Complementary to S9013 z Excellent hFE linearity 1. BASE 2. EMITTER 3. COLLECTOR MARKING: 2T1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

S9013 J3

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

transistor s9012

Abstract: S9012
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD T TO-92 Plastic-Encapsulate Transistors S9012 TO-92 TRANSISTOR PNP FEATURES Complementary to S9013 z Excellent hFE linearity 1. EMITTER z 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

s9013 transistor

Abstract: J3 s9013 S9013 SOT-23 transistor S9013 S9013 data sheet transistor s9013 MARKING J3 SOT-23 S9012 J3 SOT23 marking J3
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9012 TRANSISTOR PNP FEATURES z Complementary to S9013 z Excellent hFE linearity 1. BASE 2. EMITTER 3. COLLECTOR MARKING: 2T1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

S9013 SOT-23

Abstract: J3 s9013 transistor SOT23 J3 S9013 J3 s9013 transistor transistor S9013 s9013 s9013 transistor SOT23 J3 marking J3 MARKING J3 SOT-23
Contextual Info: S9013 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — Complementary to S9012 Excellent hFE linearity MARKING: J3 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (Ta=25 ℃unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD T TO-92 Plastic-Encapsulate Transistors S9012 TO-92 TRANSISTOR PNP FEATURES Complementary to S9013 z Excellent hFE linearity 1. EMITTER z 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)