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    S9013LT1 Search Results

    S9013LT1 Datasheets (1)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    S9013LT1
    Unknown TRANSISTOR (NPN) Scan PDF 1.09MB 2

    S9013LT1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    S9013LT1

    Contextual Info: S9013LT1 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 5.0 500 S9013LT1=J3 25 0.1 40 100 100 E=20 Vdc, I E= 0 O ) 40 5.0 WEITRON http://www.weitron.com.tw 1/3 0.1 u 0.1 u 0.1 u Rev.A 13-May-05 S9013LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)


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    s9013lt1ot-2313-may-0550madc PDF

    Contextual Info: S9012LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * * TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Complement to S9013LT1 Package:SOT-23 Collector Current :Ic= -500mA High Total Power Dissipation :Pc=225mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃


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    s9012lt1s9013lt1ot-23-500ma+2225mw-50ma PDF

    Contextual Info: S9013LT1 3 1 2 SOT-23 V CEO Value 25 40 5.0 500 S9013LT1=J3 25 0.1 40 100 100 E=20 Vdc, I E= 0 40 5.0 WEITRON http://www.weitron.com.tw O 0.1 u 0.1 u 0.1 u S9013LT1 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted) (Countinued) Characteristics


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    s9013lt1ot-2350madc PDF

    Contextual Info: S9013LT1 3 * “G” Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 5.0 500 S9013LT1=J3 25 0.1 40 100 100 O E=20 Vdc, I E= 0 ) 40 5.0 WEITRON http://www.weitron.com.tw 1/3 0.1 u 0.1 u 0.1 u Rev.A 13-May-05 S9013LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)


    Original
    s9013lt1ot-2313-may-0550madc+1smal20ua PDF

    S9013LT1

    Contextual Info: S9013LT1 TRANSISTOR NPN 1 .BASE 2 .EMITTER 3 .CO LLECTOR FEATURES Power dissipation Pcm : 0.3 W (Tamb=25°C) Collector current 0.5 A ICM: Collector-base voltage V(BR)CBo :40V Operating and storage junction temperature range Tj.Tstg :-55°C to+150°C UNIT: mm


    OCR Scan
    ot-23s9013lt1150ec160ua+3140ua120ua100ua PDF

    Contextual Info: S9013LT1 3 P b Lead Pb -Free 1 2 SOT-23 VCEO S9013PLT1=13P S9013QLT1=13Q Value 20 40 5.0 500 S9013RLT1=13R 0.1 S9013SLT1=13S 20 40 100 100 35 4.0 WEITRON http://www.weitron.com.tw 1/2 0.15 u 0.15 u 28-Apr-2011 S9013LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)


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    s9013lt1ot-23s9013plt1s9013qlt1+4s9013rlt1s9013slt128-apr-201150madc PDF

    s9013

    Abstract: S9013LT1
    Contextual Info: S9013LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 Complement to S9012LT1 Collector Current: Ic= 500mA High Total Power Dissipation: Pc=225Mw ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original
    s9013lt1ot-23s9012lt1500ma+4225mw062in300uss9013 PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 S9013LT1 1. BASE TRANSISTOR( NPN ) 2. EMITTER 3. COLLECTOR Parameter Symbol 0.95 0.4 0.95 1.9 2.4 1.3 2.9 Power dissipation


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    ot-23s9013lt1037tpy950tpy+2550ref022ref PDF

    S9013LT1

    Abstract: MARKING E1 SOT23 TRANSISTOR
    Contextual Info: SOT-23 Plastic-Encapsulate Transistors SOT—23 S9013LT1 1. BASE TRANSISTOR( NPN ) 2. EMITTER 3. COLLECTOR Parameter Symbol 0.95 0.4 0.95 1.9 2.4 1.3 2.9 Power dissipation PCM : 0.3 W(Tamb=25℃) Collector current


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    ot-23ot--23s9013lt1037tpy+4950tpy550ref022refmarking e1 sot23 transistor PDF

    transistor BR 9013

    Abstract: 9013 NPN transistor 9013 H NPN
    Contextual Info: M C C S O T -2 3 P la s tic -E n c a p s u la te T r a n s is to r s ^ 1.BASE 2.EMITTER 3.COLLECTOR ." V S9013LT1 TRANSISTOR NPN 4 '" FEATURES Oi Power dissipation PcM: 0.3 W (Tamb=25'C) C ollector current ICM: 0 .5 A C ollector-base voltage V(BR)CBO:40V


    OCR Scan
    s9013lt1symbo350transistor br 90139013 npn+1transistor 9013 h npn PDF

    Contextual Info: SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013LT1 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) 0. 95 0. 4 2. 9 Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range


    Original
    ot-23s9013lt1500ma30mhz PDF

    Transistor S8550 2TY

    Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
    Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250


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    od-1231n4148w1n4448w1n5711w+161n6263wb0520lwb0530wb0540wb5817wb5818wtransistor s8550 2tyschottky barrier sot-23 marking s4sk 8050skl4 sot-23d882 to-92br s8050bq d882transistor d882 datasheets8050 equivalentpcr100-6 PDF

    Y2 transistor

    Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
    Contextual Info: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123


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    huaxing20od-1231n4148w1n4448w+151n5711w1n6263wb0520lwb0530wb0540wy2 transistortransistor s8550 2tybq d882transistor bc547 bk 045transistor d882 datasheetz1 transistortransistor mark aqys8050 equivalentk596-bsot 89 d882 PDF